power switching device Siliup SP60P30P8 P Channel MOSFET with low RDSon and fast switching capability
Key Attributes
Model Number:
SP60P30P8
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
7.5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
30mΩ@10V;38mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
116pF
Number:
1 P-Channel
Output Capacitance(Coss):
154pF
Input Capacitance(Ciss):
2.18nF
Pd - Power Dissipation:
3.1W
Gate Charge(Qg):
52nC@10V
Mfr. Part #:
SP60P30P8
Package:
SOP-8
Product Description
Product Overview
The SP60P30P8 is a 60V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for power switching applications, it features fast switching, low gate charge, and low RDS(on). This MOSFET is suitable for hard-switched and high-frequency circuits, as well as Uninterruptible Power Supply (UPS) systems. It has undergone 100% single pulse avalanche energy testing.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Model: SP60P30P8
- Channel Type: P-Channel
- Package: SOP-8L
- Device Code: 60P30
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | V(BR)DSS | -60 | V | |||
| Static Drain-Source On-Resistance | RDS(on) | VGS=-10V , ID=-5A | 30 | 40 | m | |
| Static Drain-Source On-Resistance | RDS(on) | VGS=-4.5V , ID=-4A | 38 | 50 | m | |
| Continuous Drain Current | ID | -7.5 | A | |||
| Pulsed Drain Current | IDM | -30 | A | |||
| Single Pulse Avalanche Energy | EAS | 45 | mJ | |||
| Power Dissipation | PD | 3.1 | W | |||
| Thermal Resistance Junction-to-Ambient | RJA | 40.3 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250uA | -60 | V | ||
| Drain-Source Leakage Current | IDSS | VDS=-48V , VGS=0V | -1 | uA | ||
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =-250uA | -1.0 | -1.5 | -2.5 | V |
| Input Capacitance | Ciss | VDS=-30V , VGS=0V , f=1MHz | 2180 | pF | ||
| Output Capacitance | Coss | 154 | pF | |||
| Reverse Transfer Capacitance | Crss | 116 | pF | |||
| Total Gate Charge | Qg | VDS=-30V , VGS=-10V , ID=-6A | 52 | nC | ||
| Gate-Source Charge | Qgs | 8 | ||||
| Gate-Drain Charge | Qgd | 10 | ||||
| Turn-On Delay Time | Td(on) | VDD=-30V,VGS=-10V,RG=3, ID=-6A | 12 | nS | ||
| Rise Time | Tr | 6 | ||||
| Turn-Off Delay Time | Td(off) | 53 | ||||
| Fall Time | Tf | 13 | ||||
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A | -1.2 | V |
Package Information (SOP-8L)
| Symbol | Dimensions (mm) | |
|---|---|---|
| Min. | Max. | |
| A | 1.35 | 1.75 |
| A1 | 0.10 | 0.25 |
| A2 | 1.35 | 1.55 |
| b | 0.33 | 0.51 |
| c | 0.17 | 0.25 |
| D | 4.80 | 5.00 |
| e | 1.27 REF. | |
| E | 5.80 | 6.20 |
| E1 | 3.80 | 4.00 |
| L | 0.40 | 1.27 |
| 0 | 8 | |
2504101957_Siliup-SP60P30P8_C41355216.pdf
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