Power MOSFET 40V 370A Low RDSon TOLL Package Siliup SP40N01AGHTO Suitable for PWM Circuits
Product Overview
The SP40N01AGHTO is a 40V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), enabled by advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for PWM applications, hard switched, and high-frequency circuits, as well as power management. The device is offered in a TOLL package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Technology: Advanced Split Gate Trench Technology
- Package: TOLL
- Device Code: SP40N01AGHTO
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 40 | V | |||
| RDS(on) | @10V | 0.75 | m | |||
| Continuous Drain Current | ID | 370 | A | |||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | 40 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current (Tc=25) | ID | 370 | A | |||
| Continuous Drain Current (Tc=100) | ID | 247 | A | |||
| Pulsed Drain Current | IDM | 1480 | A | |||
| Single Pulse Avalanche Energy1 | EAS | 1522 | mJ | |||
| Power Dissipation (Tc=25) | PD | 300 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 0.42 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Static Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 40 | 46 | - | V |
| Drain-Source Leakage Current | IDSS | VDS=32V , VGS=0V , TJ=25 | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 2.0 | 2.9 | 4.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V , ID=50A | - | 0.75 | 0.9 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=25V , VGS=0V , f=1MHz | - | 6020 | - | pF |
| Output Capacitance | Coss | - | 2850 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 118 | - | pF | |
| Total Gate Charge | Qg | VDS=20V , VGS=10V , ID=50A | - | 135.6 | - | nC |
| Gate-Source Charge | Qgs | - | 38 | - | ||
| Gate-Drain Charge | Qgd | - | 42 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | Td(on) | VDD=20V , VGS=10V , RG=6, ID=50A | - | 42 | - | nS |
| Rise Time | Tr | - | 136 | - | ||
| Turn-Off Delay Time | Td(off) | - | 77 | - | nS | |
| Fall Time | Tf | - | 82 | - | ||
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 370 | A | |
| Reverse Recovery Time | Trr | IS=50A, di/dt=100A/us, TJ=25 | - | 57 | - | nS |
| Reverse Recovery Charge | Qrr | - | 183 | - | nC | |
Note: 1. The test condition is VDD=20V, VGS=10V, L=0.5mH, RG=25.
Order Information
| Device | Package | Unit/Tape |
|---|---|---|
| SP40N01AGHTO | TOLL | 2000 |
TOLL Package Information
| Symbol | Dimensions (mm) | ||
|---|---|---|---|
| Min. | Nom. | Max. | |
| A | 2.20 | 2.30 | 2.40 |
| b | 0.65 | 0.75 | 0.85 |
| C | 0.508 | REF | |
| D | 10.25 | 10.40 | 10.55 |
| D1 | 2.85 | 3.00 | 3.15 |
| E | 9.75 | 9.90 | 10.05 |
| E1 | 9.65 | 9.80 | 9.95 |
| E2 | 8.95 | 9.10 | 9.25 |
| E3 | 7.25 | 7.40 | 7.55 |
| e | 1.20 | BSC | |
| F | 1.05 | 1.20 | 1.35 |
| H | 11.55 | 11.70 | 11.85 |
| H1 | 6.03 | 6.18 | 6.33 |
| H2 | 6.85 | 7.00 | 7.15 |
| H3 | 3.00 | BSC | |
| L | 1.55 | 1.70 | 1.85 |
| L1 | 0.55 | 0.7 | 0.85 |
| L2 | 0.45 | 0.6 | 0.75 |
| M | 0.08 | REF. | |
| 8 | 10 | 12 | |
| K | 4.25 | 4.40 | 4.55 |
2410311049_Siliup-SP40N01AGHTO_C42372360.pdf
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.