Power MOSFET 40V 370A Low RDSon TOLL Package Siliup SP40N01AGHTO Suitable for PWM Circuits

Key Attributes
Model Number: SP40N01AGHTO
Product Custom Attributes
Drain To Source Voltage:
40V
Configuration:
-
Current - Continuous Drain(Id):
370A
Operating Temperature -:
-55℃~+150℃
RDS(on):
0.9mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
118pF
Number:
1 N-channel
Output Capacitance(Coss):
2.85nF
Input Capacitance(Ciss):
6.02nF
Pd - Power Dissipation:
300W
Gate Charge(Qg):
135.6nC@10V
Mfr. Part #:
SP40N01AGHTO
Package:
TOLL
Product Description

Product Overview

The SP40N01AGHTO is a 40V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), enabled by advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for PWM applications, hard switched, and high-frequency circuits, as well as power management. The device is offered in a TOLL package.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Technology: Advanced Split Gate Trench Technology
  • Package: TOLL
  • Device Code: SP40N01AGHTO

Technical Specifications

Parameter Symbol Conditions Min. Typ. Max. Units
Product Summary
Drain-Source Voltage V(BR)DSS 40 V
RDS(on) @10V 0.75 m
Continuous Drain Current ID 370 A
Absolute Maximum Ratings (Ta=25, unless otherwise noted)
Drain-Source Voltage VDS 40 V
Gate-Source Voltage VGS 20 V
Continuous Drain Current (Tc=25) ID 370 A
Continuous Drain Current (Tc=100) ID 247 A
Pulsed Drain Current IDM 1480 A
Single Pulse Avalanche Energy1 EAS 1522 mJ
Power Dissipation (Tc=25) PD 300 W
Thermal Resistance Junction-to-Case RJC 0.42 /W
Storage Temperature Range TSTG -55 150
Operating Junction Temperature Range TJ -55 150
Electrical Characteristics (Ta=25, unless otherwise noted)
Static Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V , ID=250uA 40 46 - V
Drain-Source Leakage Current IDSS VDS=32V , VGS=0V , TJ=25 - - 1 uA
Gate-Source Leakage Current IGSS VGS=20V , VDS=0V - - 100 nA
Gate Threshold Voltage VGS(th) VGS=VDS , ID =250uA 2.0 2.9 4.0 V
Static Drain-Source On-Resistance RDS(ON) VGS=10V , ID=50A - 0.75 0.9 m
Dynamic Characteristics
Input Capacitance Ciss VDS=25V , VGS=0V , f=1MHz - 6020 - pF
Output Capacitance Coss - 2850 - pF
Reverse Transfer Capacitance Crss - 118 - pF
Total Gate Charge Qg VDS=20V , VGS=10V , ID=50A - 135.6 - nC
Gate-Source Charge Qgs - 38 -
Gate-Drain Charge Qgd - 42 -
Switching Characteristics
Turn-On Delay Time Td(on) VDD=20V , VGS=10V , RG=6, ID=50A - 42 - nS
Rise Time Tr - 136 -
Turn-Off Delay Time Td(off) - 77 - nS
Fall Time Tf - 82 -
Diode Characteristics
Diode Forward Voltage VSD VGS=0V , IS=1A , TJ=25 - - 1.2 V
Maximum Body-Diode Continuous Current IS - - 370 A
Reverse Recovery Time Trr IS=50A, di/dt=100A/us, TJ=25 - 57 - nS
Reverse Recovery Charge Qrr - 183 - nC

Note: 1. The test condition is VDD=20V, VGS=10V, L=0.5mH, RG=25.

Order Information

Device Package Unit/Tape
SP40N01AGHTO TOLL 2000

TOLL Package Information

Symbol Dimensions (mm)
Min. Nom. Max.
A 2.20 2.30 2.40
b 0.65 0.75 0.85
C 0.508 REF
D 10.25 10.40 10.55
D1 2.85 3.00 3.15
E 9.75 9.90 10.05
E1 9.65 9.80 9.95
E2 8.95 9.10 9.25
E3 7.25 7.40 7.55
e 1.20 BSC
F 1.05 1.20 1.35
H 11.55 11.70 11.85
H1 6.03 6.18 6.33
H2 6.85 7.00 7.15
H3 3.00 BSC
L 1.55 1.70 1.85
L1 0.55 0.7 0.85
L2 0.45 0.6 0.75
M 0.08 REF.
8 10 12
K 4.25 4.40 4.55

2410311049_Siliup-SP40N01AGHTO_C42372360.pdf
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