Power Switching MOSFET Siliup SP40N01GHNK 40V N Channel Device with Low RDSon and PDFN5X6 8L Package
Key Attributes
Model Number:
SP40N01GHNK
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
120A
Operating Temperature -:
-55℃~+150℃
RDS(on):
1.2mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.8V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
69pF
Number:
1 N-channel
Input Capacitance(Ciss):
5.75nF
Output Capacitance(Coss):
1.95nF
Pd - Power Dissipation:
130W
Gate Charge(Qg):
126nC@20V
Mfr. Part #:
SP40N01GHNK
Package:
PDFN-8L(5x6)
Product Description
Product Overview
The SP40N01GHNK is a 40V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), utilizing advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for power switching applications, PWM applications, and DC-DC converters. It comes in a PDFN5X6-8L package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Line: Power MOSFET
- Channel Type: N-Channel
- Technology: Advanced Split Gate Trench Technology
- Package: PDFN5X6-8L
- Device Code: 40N01GH
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | V(BR)DSS | 40 | V | |||
| RDS(on) | RDS(on) | @10V | 1.2 | m | ||
| ID | ID | 120 | A | |||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDSS | 40 | V | |||
| Gate-Source Voltage | VGSS | -20 | 20 | V | ||
| Continuous Drain Current (Tc=25C) Silicon Limit | ID | 230 | A | |||
| Continuous Drain Current (Tc=25C) Package Limit | ID | 120 | A | |||
| Continuous Drain Current (Tc=100C) | ID | 80 | A | |||
| Pulse Drain Current | IDM | Tested | 480 | A | ||
| Single pulsed avalanche energy | EAS | 1089 | mJ | |||
| Power Dissipation (Tc=25C) | PD | 130 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 0.96 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BV DSS | VGS=0V , ID=250uA | 40 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=32V , VGS=0V , TJ=25 | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 2 | 2.8 | 4 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V, ID =20A | - | 1.2 | 1.5 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=20V , VGS=0V , f=1MHz | - | 5750 | - | pF |
| Output Capacitance | Coss | - | 1950 | - | ||
| Reverse Transfer Capacitance | Crss | - | 69 | - | ||
| Total Gate Charge | Qg | VDS=20V , VGS=20V , ID=30A | - | 126 | - | nC |
| Gate-Source Charge | Qgs | - | 18 | - | ||
| Gate-Drain Charge | Qgd | - | 15.5 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=20 VGS=20V , RG=3, ID=30A | - | 18 | - | nS |
| Rise Time | tr | - | 5 | - | ||
| Turn-Off Delay Time | td(off) | - | 52 | - | ||
| Fall Time | tf | - | 9.5 | - | ||
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Diode Continuous Current | IS | - | - | 120 | A | |
| Reverse recover time | trr | IS=20A, di/dt=100A/us, TJ=25 | - | 29 | - | nS |
| Reverse recovery charge | Qrr | - | 113 | - | nC | |
| Package Information (PDFN5X6-8L) | ||||||
| Symbol | Dimensions In Millimeters | Dimensions In Inches | Min. | Max. | Min. | Max. |
| A | 0.900 - 1.000 | 0.035 - 0.039 | 0.900 | 1.000 | 0.035 | 0.039 |
| A3 | 0.254REF. | 0.010REF. | ||||
| D | 4.944 - 5.096 | 0.195 - 0.201 | 4.944 | 5.096 | 0.195 | 0.201 |
| E | 5.974 - 6.126 | 0.235 - 0.241 | 5.974 | 6.126 | 0.235 | 0.241 |
| D1 | 3.910 - 4.110 | 0.154 - 0.162 | 3.910 | 4.110 | 0.154 | 0.162 |
| E1 | 3.375 - 3.575 | 0.133 - 0.141 | 3.375 | 3.575 | 0.133 | 0.141 |
| D2 | 4.824 - 4.976 | 0.190 - 0.196 | 4.824 | 4.976 | 0.190 | 0.196 |
| E2 | 5.674 - 5.826 | 0.223 - 0.229 | 5.674 | 5.826 | 0.223 | 0.229 |
| k | 1.190 - 1.390 | 0.047 - 0.055 | 1.190 | 1.390 | 0.047 | 0.055 |
| b | 0.350 - 0.450 | 0.014 - 0.018 | 0.350 | 0.450 | 0.014 | 0.018 |
| e | 1.270TYP. | 0.050TYP. | ||||
| L | 0.559 - 0.711 | 0.022 - 0.028 | 0.559 | 0.711 | 0.022 | 0.028 |
| L1 | 0.424 - 0.576 | 0.017 - 0.023 | 0.424 | 0.576 | 0.017 | 0.023 |
| H | 0.574 - 0.726 | 0.023 - 0.029 | 0.574 | 0.726 | 0.023 | 0.029 |
| 10 - 12 | 10 - 12 | 10 | 12 | 10 | 12 | |
2504101957_Siliup-SP40N01GHNK_C22385416.pdf
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