Low RDSon P Channel MOSFET Siliup SP30P16P8 30 Volt Device Suitable for High Frequency Power Switching
Key Attributes
Model Number:
SP30P16P8
Product Custom Attributes
Drain To Source Voltage:
30V
Configuration:
-
Current - Continuous Drain(Id):
9A
Operating Temperature -:
-55℃~+150℃
RDS(on):
16mΩ@10V;21mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
200pF
Number:
-
Output Capacitance(Coss):
250pF
Pd - Power Dissipation:
2W
Input Capacitance(Ciss):
1.36nF
Gate Charge(Qg):
30nC@10V
Mfr. Part #:
SP30P16P8
Package:
SOP-8L
Product Description
Product Overview
The SP30P16P8 is a 30V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. This device features fast switching, low gate charge, and low RDS(on), making it suitable for power switching applications, hard switched and high-frequency circuits, and uninterruptible power supplies. It is 100% tested for single pulse avalanche energy.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Device Code: 30P16
- Package: SOP-8L
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | V(BR)DSS | -30 | V | |||
| RDS(on)TYP | RDS(on)TYP | @-10V | 16 | m | ||
| @-4.5V | 21 | m | ||||
| ID | ID | -9 | A | |||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | -30 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | -9 | A | |||
| Pulsed Drain Current | IDM | -36 | A | |||
| Single Pulse Avalanche Energy1 | EAS | 7.2 | mJ | |||
| Power Dissipation | PD | 2 | W | |||
| Thermal Resistance Junction-to-Ambient | RJA | 62.5 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250uA | -30 | V | ||
| Drain-Source Leakage Current | IDSS | VDS=-24V , VGS=0V | -1 | uA | ||
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =-250uA | -1.0 | -1.5 | -2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-10V , ID=-6A | 16 | 25 | m | |
| VGS=-4.5V , ID=-4A | 21 | 34 | m | |||
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=-15V , VGS=0V , f=1MHz | 1360 | pF | ||
| Output Capacitance | Coss | 250 | pF | |||
| Reverse Transfer Capacitance | Crss | 200 | pF | |||
| Total Gate Charge | Qg | VDS=-15V , VGS=-10V , ID=-10A | 30 | nC | ||
| Gate-Source Charge | Qgs | 3.5 | ||||
| Gate-Drain Charge | Qgd | 9.2 | ||||
| Switching Characteristics | ||||||
| Turn-On Delay Time | Td(on) | VDD=-30V, VGS=-10V ,RG=2.5, ID=-9A | 9 | nS | ||
| Rise Time | Tr | 11 | ||||
| Turn-Off Delay Time | Td(off) | 23 | ||||
| Fall Time | Tf | 10 | ||||
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A | -1.2 | V | ||
| Maximum Body-Diode Continuous Current | IS | -9 | A | |||
| Reverse recover time | Trr | IS=-10A, di/dt=100A/us, Tj=25 | 23 | nS | ||
| Reverse recovery charge | Qrr | 15 | nC | |||
| Package Information (SOP-8L) | ||||||
| Symbol | Dimensions In Millimeters | Min. | Max. | |||
| A | 1.35 | 1.75 | ||||
| A1 | 0.10 | 0.25 | ||||
| A2 | 1.35 | 1.55 | ||||
| b | 0.33 | 0.51 | ||||
| c | 0.17 | 0.25 | ||||
| D | 4.80 | 5.00 | ||||
| e | 1.27 REF. | |||||
| E | 5.80 | 6.20 | ||||
| E1 | 3.80 | 4.00 | ||||
| L | 0.40 | 1.27 | ||||
| 0 | 8 | |||||
Note: 1. The EAS Test condition is VDD=-15V,VGS =-10V,L = 0.1mH, Rg=25
Order Information:
| Device | Package | Unit/Tape |
|---|---|---|
| SP30P16P8 | SOP-8L | 4000 |
2504101957_Siliup-SP30P16P8_C41355028.pdf
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