quality 100V N Channel Power MOSFET Siliup SP010N01BGHTF with High Pulsed Drain Current and Low Gate Charge factory

100V N Channel Power MOSFET Siliup SP010N01BGHTF with High Pulsed Drain Current and Low Gate Charge

Name: 100V N Channel Power MOSFET Siliup SP010N01BGHTF with High Pulsed Drain Current and Low Gate Charge
Brand: Hefei Purple Horn E-Commerce Co., Ltd.
SKU: SP010N01BGHTF
Availability: InStock

Key Attributes

Model Number: SP010N01BGHTF

Product Custom Attributes

Mfr. Part #:

SP010N01BGHTF

Package:

TO-247

Product Description

Product Overview

The SP010N01BGHTF is a 100V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for power switching applications, DC-DC converters, and power management systems. It comes in a TO-247 package.

Product Attributes

Brand: Siliup Semiconductor Technology Co. Ltd.
Product Code: SP010N01BGHTF
Technology: Advanced Split Gate Trench Technology
Channel Type: N-Channel
Package: TO-247

Technical Specifications

Parameter	Symbol	Test Condition	Min	Typ	Max	Unit
Absolute Maximum Ratings
Drain-Source Voltage	VDS				100	V
Gate-Source Voltage	VGS				±20	V
Continuous Drain Current (Tc=25)	ID	Package Limit			275	A
Continuous Drain Current (Tc=100)	ID				183	A
Pulsed Drain Current	IDM				1100	A
Single Pulse Avalanche Energy¹	EAS				2601	mJ
Power Dissipation (Tc=25)	PD				340	W
Power Dissipation (Tc=100)	PD				136	W
Thermal Resistance Junction-to-Case	RJC			0.37		/W
Storage Temperature Range	TSTG		-55		150
Operating Junction Temperature Range	TJ		-55		150
Electrical Characteristics
Drain-Source Breakdown Voltage	BVDSS	VGS=0V , ID=250uA	100	-	-	V
Drain Cut-Off Current	IDSS	VDS=80V , VGS=0V , TJ=25	-	-	1	µA
Gate Leakage Current	IGSS	VGS=±20V , VDS=0V	-	-	±100	nA
Gate Threshold Voltage	VGS(th)	VGS=VDS , ID =250µA	2	3	4	V
Drain-Source ON Resistance	RDS(ON)	VGS=10V , ID=20A	-	1.35	1.75	mΩ
Gate Resistance	RG	VDS=50V , VGS=0V , f=1MHz	-	4.1	-	Ω
Dynamic Characteristics
Input Capacitance	Ciss	VDS=50V , VGS=0V , f=1MHz	-	12142	-	pF
Output Capacitance	Coss		-	4588	-	pF
Reverse Transfer Capacitance	Crss		-	129	-	pF
Total Gate Charge	Qg	VDS=50V , VGS=10V , ID=125A	-	218	-	nC
Gate-Source Charge	Qgs		-	66	-	nC
Gate-Drain Charge	Qgd		-	57	-	nC
Gate Plateau Voltage	Vplateau		-	5	-	V
Switching Characteristics
Turn-On Delay Time	td(on)	VDD=50V , VGS=10V , RG=1.6Ω , ID=125A	-	43	-	nS
Rise Time	tr		-	71	-	nS
Turn-Off Delay Time	td(off)		-	149	-	nS
Fall Time	tf		-	89	-	nS
Source-Drain Diode Characteristics
Source-Drain Diode Forward Voltage	VSD	IS=1A , VGS=0V	-	-	1.2	V
Maximum Body-Diode Continuous Current	IS		-	-	275	A
Reverse Recovery Time	Trr	IS=20A , di/dt=100A/µs , TJ=25°C	-	136	-	nS
Reverse Recovery Charge	Qrr		-	380	-	nC

Note: 1. The test condition is VDD=50V,VGS=10V,L=0.5mH,RG=25Ω

Order Information

Device	Package	Unit/Tube
SP010N01BGHTF	TO-247	30

TO-247 Package Information

Symbol	Dimensions In Millimeters		Dimensions In Inches
Symbol	Min.	Max.	Min.	Max.
A	4.850	5.150	0.191	0.200
A1	2.200	2.600	0.087	0.102
b	1.000	1.400	0.039	0.055
b1	2.800	3.200	0.110	0.126
b2	1.800	2.200	0.071	0.087
c	0.500	0.700	0.020	0.028
c1	1.900	2.100	0.075	0.083
D	15.450	15.750	0.608	0.620
E1	3.500 REF.		0.138 REF.
E2	3.600 REF.		0.142 REF.
L	40.900	41.300	1.610	1.626
L1	24.800	25.100	0.976	0.988
L2	20.300	20.600	0.799	0.811
Φ	7.100	7.300	0.280	0.287
e	5.450 TYP.		0.215 TYP.
H	5.980 REF.		0.235 REF.
h	0.000	0.300	0.000	0.012

Soldering Information

Temperature Profile for IR Reflow Soldering (Pb-Free):

Preheating: 25 ~ 150 , Time: 60 ~ 90 sec.
Peak Temp.: 245 ± 5 , Duration: 5 ± 0.5 sec.
Cooling Speed: 2 ~ 10 /sec.

Resistance to Soldering Heat Test Conditions:

Temp.: 260 ± 5
Time: 10 ± 1 sec.

2511281600_Siliup-SP010N01BGHTF_C53059013.pdf

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