N Channel Power MOSFET Siliup SP60N05GNK 60V 70A PDFN5X6 8L Package Ideal for Hard Switched Circuits

Key Attributes
Model Number: SP60N05GNK
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
70A
Operating Temperature -:
-55℃~+150℃
RDS(on):
4.3mΩ@10V;5.5mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
19pF
Number:
1 N-channel
Output Capacitance(Coss):
660pF
Pd - Power Dissipation:
70W
Input Capacitance(Ciss):
2.304nF
Gate Charge(Qg):
37.5nC@10V
Mfr. Part #:
SP60N05GNK
Package:
PDFN-8L(5x6)
Product Description

Product Overview

The SP60N05GNK is a 60V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), enabled by advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for power switching applications, hard switched and high frequency circuits, and uninterruptible power supplies. It is available in a PDFN5X6-8L package.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Product Code: SP60N05GNK
  • Technology: Advanced Split Gate Trench Technology
  • Channel Type: N-Channel
  • Package: PDFN5X6-8L

Technical Specifications

Parameter Symbol Test Condition Min Typ Max Unit
Product Summary
V(BR)DSS 60 V
RDS(on) @10V 4.3 6.0 m
RDS(on) @4.5V 5.5 7.3 m
ID 70 A
Absolute Maximum Ratings
Drain-Source Voltage VDSS 60 V
Gate-Source Voltage VGSS 20 V
Continuous Drain Current (Tc=25C) ID 70 A
Continuous Drain Current (Tc=100C) ID 47 A
Pulse Drain Current IDM Tested 280 A
Single Pulse Avalanche Energy EAS 256 mJ
Power Dissipation (Tc=25C) PD 70 W
Thermal Resistance Junction-to-Case RJC 1.79 C/W
Maximum Junction Temperature TJ -55 150 C
Storage Temperature Range TSTG -55 150 C
Electrical Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250mA 60 - - V
Zero Gate Voltage Drain Current IDSS VDS=48V, VGS=0V - - 1 uA
Gate Leakage Current IGSS VGS=20V, VDS=0V - - 100 nA
Gate Threshold Voltage VGS(th) VDS=VGS, ID=250uA 1 2 3 V
Drain-Source On-state Resistance RDS(ON) VGS=10V, ID=20A - 4.3 6.0 m
Drain-Source On-state Resistance RDS(ON) VGS=4.5V, ID=10A - 5.5 7.3 m
Dynamic Characteristics
Input Capacitance Ciss VGS=0V, VDS=30V, F=1MHz - 2304 - pF
Output Capacitance Coss - 660 - pF
Reverse Transfer Capacitance Crss - 19 - pF
Total Gate Charge Qg VDS=30V, VGS=10V, ID=20A - 37.5 - nC
Gate-Source Charge Qgs - 6.5 - nC
Gate-Drain Charge Qgd - 10 - nC
Switching Characteristics
Turn-On Delay Time td(on) VDD=30V, ID=20A, VGS=10V, RG=4.7 - 9 - nS
Rise Time tr - 35 - nS
Turn-Off Delay Time td(off) - 32 - nS
Fall Time tf - 58 - nS
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage VSD VGS=0V , IS=1A , TJ=25 - - 1.2 V
Maximum Body-Diode Continuous Current IS - - 70 A
Reverse Recovery Time trr IS= 20 A,di/dt=100 A/sTJ=25 - 27 - nS
Reverse Recovery Charge Qrr - 39 - nC
Package Dimensions (PDFN5X6-8L)
Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max.
A 0.900 - 1.000 0.035 - 0.039
A3 0.254REF. 0.010REF.
D 4.944 - 5.096 0.195 - 0.201
E 5.974 - 6.126 0.235 - 0.241
D1 3.910 - 4.110 0.154 - 0.162
E1 3.375 - 3.575 0.133 - 0.141
D2 4.824 - 4.976 0.190 - 0.196
E2 5.674 - 5.826 0.223 - 0.229
k 1.190 - 1.390 0.047 - 0.055
b 0.350 - 0.450 0.014 - 0.018
e 1.270TYP. 0.050TYP.
L 0.559 - 0.711 0.022 - 0.028
L1 0.424 - 0.576 0.017 - 0.023
H 0.574 - 0.726 0.023 - 0.029
10 - 12 10 - 12

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