N Channel Power MOSFET Siliup SP60N05GNK 60V 70A PDFN5X6 8L Package Ideal for Hard Switched Circuits
Product Overview
The SP60N05GNK is a 60V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), enabled by advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for power switching applications, hard switched and high frequency circuits, and uninterruptible power supplies. It is available in a PDFN5X6-8L package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP60N05GNK
- Technology: Advanced Split Gate Trench Technology
- Channel Type: N-Channel
- Package: PDFN5X6-8L
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | 60 | V | ||||
| RDS(on) | @10V | 4.3 | 6.0 | m | ||
| RDS(on) | @4.5V | 5.5 | 7.3 | m | ||
| ID | 70 | A | ||||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | 60 | V | |||
| Gate-Source Voltage | VGSS | 20 | V | |||
| Continuous Drain Current (Tc=25C) | ID | 70 | A | |||
| Continuous Drain Current (Tc=100C) | ID | 47 | A | |||
| Pulse Drain Current | IDM | Tested | 280 | A | ||
| Single Pulse Avalanche Energy | EAS | 256 | mJ | |||
| Power Dissipation (Tc=25C) | PD | 70 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 1.79 | C/W | |||
| Maximum Junction Temperature | TJ | -55 | 150 | C | ||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250mA | 60 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=48V, VGS=0V | - | - | 1 | uA |
| Gate Leakage Current | IGSS | VGS=20V, VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250uA | 1 | 2 | 3 | V |
| Drain-Source On-state Resistance | RDS(ON) | VGS=10V, ID=20A | - | 4.3 | 6.0 | m |
| Drain-Source On-state Resistance | RDS(ON) | VGS=4.5V, ID=10A | - | 5.5 | 7.3 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VGS=0V, VDS=30V, F=1MHz | - | 2304 | - | pF |
| Output Capacitance | Coss | - | 660 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 19 | - | pF | |
| Total Gate Charge | Qg | VDS=30V, VGS=10V, ID=20A | - | 37.5 | - | nC |
| Gate-Source Charge | Qgs | - | 6.5 | - | nC | |
| Gate-Drain Charge | Qgd | - | 10 | - | nC | |
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=30V, ID=20A, VGS=10V, RG=4.7 | - | 9 | - | nS |
| Rise Time | tr | - | 35 | - | nS | |
| Turn-Off Delay Time | td(off) | - | 32 | - | nS | |
| Fall Time | tf | - | 58 | - | nS | |
| Drain-Source Body Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 70 | A | |
| Reverse Recovery Time | trr | IS= 20 A,di/dt=100 A/sTJ=25 | - | 27 | - | nS |
| Reverse Recovery Charge | Qrr | - | 39 | - | nC | |
| Package Dimensions (PDFN5X6-8L) | ||||||
| Symbol | Dimensions In Millimeters | Dimensions In Inches | Min. | Max. | Min. | Max. |
| A | 0.900 - 1.000 | 0.035 - 0.039 | ||||
| A3 | 0.254REF. | 0.010REF. | ||||
| D | 4.944 - 5.096 | 0.195 - 0.201 | ||||
| E | 5.974 - 6.126 | 0.235 - 0.241 | ||||
| D1 | 3.910 - 4.110 | 0.154 - 0.162 | ||||
| E1 | 3.375 - 3.575 | 0.133 - 0.141 | ||||
| D2 | 4.824 - 4.976 | 0.190 - 0.196 | ||||
| E2 | 5.674 - 5.826 | 0.223 - 0.229 | ||||
| k | 1.190 - 1.390 | 0.047 - 0.055 | ||||
| b | 0.350 - 0.450 | 0.014 - 0.018 | ||||
| e | 1.270TYP. | 0.050TYP. | ||||
| L | 0.559 - 0.711 | 0.022 - 0.028 | ||||
| L1 | 0.424 - 0.576 | 0.017 - 0.023 | ||||
| H | 0.574 - 0.726 | 0.023 - 0.029 | ||||
| 10 - 12 | 10 - 12 | |||||
2504101957_Siliup-SP60N05GNK_C22466771.pdf
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