N Channel 135V Power MOSFET Siliup SP013N03GHTO Featuring Low RDS on and Fast Switching for Power Management
Key Attributes
Model Number:
SP013N03GHTO
Product Custom Attributes
Drain To Source Voltage:
135V
Current - Continuous Drain(Id):
270A
RDS(on):
3mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3V
Reverse Transfer Capacitance (Crss@Vds):
23pF
Number:
1 N-channel
Output Capacitance(Coss):
587pF
Input Capacitance(Ciss):
9.023nF
Gate Charge(Qg):
89nC@10V
Mfr. Part #:
SP013N03GHTO
Package:
TOLL
Product Description
Product Overview
The SP013N03GHTO is a 135V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for PWM applications, hard switched and high frequency circuits, and power management. It comes in a TOLL package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP013N03GHTO
- Technology: Advanced Split Gate Trench Technology
- Channel Type: N-Channel
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 135 | V | |||
| RDS(on) Typ | @10V | 3.0 | m | |||
| Continuous Drain Current | ID | 270 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25, unless otherwise noted) | 135 | V | ||
| Gate-Source Voltage | VGS | (Ta=25, unless otherwise noted) | 20 | V | ||
| Continuous Drain Current | ID | (Tc=25) | 270 | A | ||
| Continuous Drain Current | ID | (Tc=100) | 180 | A | ||
| Pulsed Drain Current | IDM | 1080 | A | |||
| Single Pulse Avalanche Energy | EAS | 1 | 1386 | mJ | ||
| Power Dissipation | PD | (Tc=25) | 196 | W | ||
| Thermal Resistance Junction-to-Case | RJC | 0.32 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | ID = 250A, VGS = 0V | 135 | 150 | - | V |
| Drain-Source Leakage Current | IDSS | VDS =108V, VGS = 0V | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS = 20V, VDS = 0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250A | 2 | 3 | 4 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS = 10V, ID = 20A | - | 3.0 | 3.8 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=75V , VGS=0V , f=1MHz | - | 9023 | - | pF |
| Output Capacitance | Coss | - | 587 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 23 | - | pF | |
| Total Gate Charge | Qg | VDS=75V , VGS=10V , ID=20A | - | 89 | - | nC |
| Gate-Source Charge | Qgs | - | 43 | - | ||
| Gate-Drain Charge | Qg d | - | 28 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | Td(on) | VDD=75V, VGS=10V , RG=3.0, ID=20A | - | 26 | - | nS |
| Rise Time | Tr | - | 39 | - | ||
| Turn-Off Delay Time | Td(off) | - | 54 | - | ||
| Fall Time | Tf | - | 21 | - | ||
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 270 | A | |
| Reverse Recovery Time | Trr | IS=140A, di/dt=100A/us, TJ=25 | - | 175 | - | nS |
| Reverse Recovery Charge | Qrr | - | 544 | - | nC | |
| Package Information | ||||||
| Package | TOLL | |||||
| Order Information | Device | Package | Unit/Tape | |||
| SP013N03GHTO | TOLL | 2000 | ||||
| Marking | Device Code: SP013N03GHTO, Week Code | |||||
Note: 1. The test condition is VDD=50V,VGS=10V,L=0.5mH,RG=25
2506271720_Siliup-SP013N03GHTO_C49258030.pdf
Related Products
IGBT module YANGJIE MG200HF12MIC2 offering short circuit rating and fast soft reverse recovery diodes
Product OverviewThe MG200HF12MIC2 S-M304 is a high-performance IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient. This module offers fast switching and a ...
Small signal Zener diode YANGJIE MMSZ5229BQ epoxy UL94 V0 flammability rating with tin leads
Product OverviewThe MMSZ5221BQ THRU MMSZ5261BQ series are small signal Zener diodes designed for general regulation functions. These diodes feature epoxy that meets UL-94 V-0 flammability rating and is halogen-free, with a Moisture Sensitivity Level 1. They offer Zener voltages ranging from 2.4V to ...
IGBT power module YANGJIE MG10P12P3 optimized for motor drivers AC DC servo drives and UPS systems
Product OverviewThe MG10P12P3 S-M452 is a high-performance IGBT module designed for demanding applications such as motor drivers, AC/DC servo drive amplifiers, and Uninterruptible Power Supplies (UPS). It features low switching losses, low VCE(sat), a positive temperature coefficient, and an ...
High speed switching transistor YANGJIE DGP15N65CTL designed for hard and soft switching applications
Product OverviewThe DGP15N65CTL0 is a high-speed smooth switching IGBT discrete device designed for hard and soft switching applications. It features a maximum junction temperature of 175, a positive temperature coefficient, and high ruggedness with temperature stability. This IGBT is suitable for ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
