500V N Channel Planar MOSFET Siliup SP5N50TH Featuring Fast Switching and Low RDSon for DC DC Converter
Key Attributes
Model Number:
SP5N50TH
Product Custom Attributes
Drain To Source Voltage:
500V
Current - Continuous Drain(Id):
5A
RDS(on):
1.33Ω@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3V
Reverse Transfer Capacitance (Crss@Vds):
7pF
Number:
1 N-channel
Pd - Power Dissipation:
78W
Output Capacitance(Coss):
64pF
Input Capacitance(Ciss):
608pF
Gate Charge(Qg):
12.7nC@10V
Mfr. Part #:
SP5N50TH
Package:
TO-252
Product Description
Product Overview
The SP5N50TH is a 500V N-Channel Planar MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), making it ideal for high-frequency switching and synchronous rectification applications, including DC-DC converters. The device is 100% tested for single pulse avalanche energy.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Line: Planar MOSFET
- Channel Type: N-Channel
- Package: TO-252
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 500 | V | |||
| RDS(on) Typ. | RDS(on) | @10V | 1.33 | |||
| Continuous Drain Current | ID | 5 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25, unless otherwise noted) | 500 | V | ||
| Gate-Source Voltage | VGS | (Ta=25, unless otherwise noted) | 30 | V | ||
| Continuous Drain Current | ID | (TC=25) | 5 | A | ||
| Continuous Drain Current | ID | (TC=100) | 3.4 | A | ||
| Pulsed Drain Current | IDM | 20 | A | |||
| Single Pulse Avalanche Energy | EAS | 1 | 255 | mJ | ||
| Power Dissipation | PD | (TC=25) | 78 | W | ||
| Thermal Resistance Junction-to-Case | RJC | 1.6 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 500 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=400V, VGS=0V, TJ=25 | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=30V, VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS, ID =250uA | 2.0 | 3.0 | 4.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V, ID=2A | - | 1.33 | 1.55 | |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=25V, VGS=0V, f=1MHz | - | 608 | - | pF |
| Output Capacitance | Coss | - | 64 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 7 | - | pF | |
| Total Gate Charge | Qg | VDS=400V, VGS=10V, ID=2A | - | 12.7 | - | nC |
| Gate-Source Charge | Qgs | - | 3.3 | - | ||
| Gate-Drain Charge | Qg d | - | 4.5 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | Td(on) | VDD=400V, VGS=10V, RG=25, ID=2A | - | 13 | - | nS |
| Rise Time | Tr | - | 17 | - | ||
| Turn-Off Delay Time | Td(off) | - | 45 | - | ||
| Fall Time | Tf | - | 26 | - | ||
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V, IS=1A, TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 5 | A | |
| Reverse Recovery Time | Trr | IS=2A, di/dt=100A/us, TJ=25 | - | 304 | - | nS |
| Reverse Recovery Charge | Qrr | - | 1.5 | - | uC | |
| Package Information (TO-252) | ||||||
| Dimension Symbol | Dimensions In Millimeters | Dimensions In Inches | Min. | Max. | Min. | Max. |
| A | 2.200 - 2.400 | 0.087 - 0.094 | ||||
| A1 | 0.000 - 0.127 | 0.000 - 0.005 | ||||
| b | 0.660 - 0.860 | 0.026 - 0.034 | ||||
| c | 0.460 - 0.580 | 0.018 - 0.023 | ||||
| D | 6.500 - 6.700 | 0.256 - 0.264 | ||||
| D1 | 5.100 - 5.460 | 0.201 - 0.215 | ||||
| D2 | 4.830 REF. | 0.190 REF. | ||||
| E | 6.000 - 6.200 | 0.236 - 0.244 | ||||
| e | 2.186 - 2.386 | 0.086 - 0.094 | ||||
| L | 9.800 - 10.400 | 0.386 - 0.409 | ||||
| L1 | 2.900 REF. | 0.114 REF. | ||||
| L2 | 1.400 - 1.700 | 0.055 - 0.067 | ||||
| L3 | 1.600 REF. | 0.063 REF. | ||||
| L4 | 0.600 - 1.000 | 0.024 - 0.039 | ||||
| 1.100 - 1.300 | 0.043 - 0.051 | |||||
| 0 - 8 | 0 - 8 | |||||
| h | 0.000 - 0.300 | 0.000 - 0.012 | ||||
| V | 5.350 REF. | 0.211 REF. | ||||
2506271720_Siliup-SP5N50TH_C49257238.pdf
Related Products
Surface Mount Schottky Bridge Rectifier YONGYUTAI MB14F with 40 Volt Reverse Voltage and 1 Amp Forward Current
Product OverviewThis MBF package Surface Mount Schottky Bridge rectifier offers a reverse voltage range of 40 to 200V and a forward current of 1A. It features high surge current capability and is designed for surface mount applications. Ideal for single-phase half-wave 60 Hz rectification with ...
Versatile NPN transistor YTL BCW60D in SOT23 package suitable for multiple electronic applications
Product OverviewThe BCW60D is a general-purpose NPN bipolar transistor in a SOT-23 package, designed for various electronic applications. It offers reliable performance with key electrical characteristics such as breakdown voltages, current gain, and saturation voltages.Product AttributesTransistor ...
Power electronics IGBT YANGJIE MG150HF12TLC1 featuring trench technology and ultra fast soft recovery anti parallel FWD
Product OverviewThe MG150HF12TLC1 S-M409 is a high-performance IGBT module designed for demanding power electronics applications. It features low VCE(sat) with Trench technology, a positive temperature coefficient for VCE(sat), high short circuit capability, and an integrated ultra-fast & soft ...
Zener diode YANGJIE BZX584B15VQ with 15 volt Zener voltage and 2 percent tolerance in compact SOD523 package
Product OverviewThe BZX584B3V6Q thru BZX584B36VQ series are small signal Zener diodes designed for general regulation functions. They feature an epoxy case that meets UL-94 V-0 flammability rating and is halogen-free, with Moisture Sensitivity Level 1. These diodes offer Zener voltages ranging from ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
