SP015N03BGHTQ 150V N Channel Power MOSFET Featuring Low Gate Charge and Split Gate Trench Technology
Key Attributes
Model Number:
SP015N03BGHTQ
Product Custom Attributes
Drain To Source Voltage:
150V
Configuration:
-
Current - Continuous Drain(Id):
260A
Operating Temperature -:
-55℃~+150℃
RDS(on):
3.7mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
21pF
Number:
1 N-channel
Output Capacitance(Coss):
772pF
Input Capacitance(Ciss):
8.538nF
Pd - Power Dissipation:
300W
Gate Charge(Qg):
122nC@10V
Mfr. Part #:
SP015N03BGHTQ
Package:
TO-220-3L
Product Description
Product Overview
The SP015N03BGHTQ is a 150V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for power switching applications, DC-DC converters, and power management. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. The device is 100% tested for single pulse avalanche energy.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP015N03BGHTQ
- Technology: Advanced Split Gate Trench Technology
- Channel Type: N-Channel
- Package: TO-220-3L
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | ID = 250A, VGS = 0V | 150 | - | - | V |
| Drain Cut-Off Current | IDSS | VDS = 120V, VGS = 0V | - | - | 1 | uA |
| Gate Leakage Current | IGSS | VGS = 20V, VDS = 0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250A | 2.5 | 3.0 | 3.5 | V |
| Drain-Source ON Resistance | RDS(ON) | VGS = 10V, ID = 20A | - | 3.7 | 4.7 | m |
| Input Capacitance | Ciss | VDS =75V, VGS = 0V, f = 1.0MHz | - | 8538 | - | pF |
| Output Capacitance | Coss | - | - | 772 | - | pF |
| Reverse Transfer Capacitance | Crss | - | - | 21 | - | pF |
| Total Gate Charge | Qg | VDS=75V , VGS=10V , ID=70A | - | 122 | - | nC |
| Gate-Source Charge | Qgs | - | - | 48 | - | nC |
| Gate-Drain Charge | Qgd | - | - | 33 | - | nC |
| Turn-On Delay Time | td(on) | VGS = 10V, VDS =75V, RL=3 RG = 4.7 | - | 33 | - | nS |
| Rise Time | tr | - | - | 59 | - | nS |
| Turn-Off Delay Time | td(off) | - | - | 89 | - | nS |
| Fall Time | tf | - | - | 48 | - | nS |
| Source-Drain Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | - | 200 | A |
| Reverse Recovery Time | Trr | IS=80A, di/dt=100A/us, TJ=25 | - | 96 | - | nS |
| Reverse Recovery Charge | Qrr | - | - | 310 | - | nC |
| Single pulsed avalanche energy | EAS | VDD=50V,VGS=10V,L=0.5mH,RG=25 | - | 1521 | - | mJ |
| Power dissipation | PD | Tc=25 | - | - | 300 | W |
| Thermal resistance, junction-case | RJC | - | - | 0.42 | - | /W |
| Storage Temperature Range | TSTG | - | -55 | - | 150 | |
| Operating Junction Temperature Range | TJ | - | -55 | - | 150 | |
| Continuous drain current (Tc=25) Silicon limited | ID | Tc=25 | - | - | 260 | A |
| Continuous drain current (Tc=25) Package limited | ID | Tc=25 | - | - | 200 | A |
| Continuous drain current (Tc=100) | ID | Tc=100 | - | - | 125 | A |
| Pulsed drain current | IDM | - | - | - | 800 | A |
Package Information (TO-220-3L)
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
|---|---|---|---|---|
| Min | Max | Min | Max | |
| A | 4.400 | 4.600 | 0.173 | 0.181 |
| A1 | 2.250 | 2.550 | 0.089 | 0.100 |
| b | 0.710 | 0.910 | 0.028 | 0.036 |
| b1 | 1.170 | 1.370 | 0.046 | 0.054 |
| c | 0.330 | 0.650 | 0.013 | 0.026 |
| c1 | 1.200 | 1.400 | 0.047 | 0.055 |
| D | 9.910 | 10.250 | 0.390 | 0.404 |
| E | 8.950 | 9.750 | 0.352 | 0.384 |
| E1 | 12.650 | 13.050 | 0.498 | 0.514 |
| e | 2.540 TYP. | 0.100 TYP. | ||
| e1 | 4.980 | 5.180 | 0.196 | 0.204 |
| F | 2.650 | 2.950 | 0.104 | 0.116 |
| H | 7.900 | 8.100 | 0.311 | 0.319 |
| h | 0.000 | 0.300 | 0.000 | 0.012 |
| L | 12.900 | 13.400 | 0.508 | 0.528 |
| L1 | 2.850 | 3.250 | 0.112 | 0.128 |
| V | 6.900 REF. | 0.276 REF. | ||
| 3.400 | 3.800 | 0.134 | 0.150 |
2504101957_Siliup-SP015N03BGHTQ_C42372367.pdf
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