High Speed Switching Silicon Carbide MOSFET Siliup SP90N120CTK with Low Capacitance and 1200V Rating
Key Attributes
Model Number:
SP90N120CTK
Product Custom Attributes
Drain To Source Voltage:
1.2kV
Current - Continuous Drain(Id):
135A
Operating Temperature -:
-55℃~+175℃
RDS(on):
15mΩ@18V
Gate Threshold Voltage (Vgs(th)):
2.5V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
8pF
Input Capacitance(Ciss):
4.76nF
Pd - Power Dissipation:
503W
Output Capacitance(Coss):
243pF
Gate Charge(Qg):
210nC
Mfr. Part #:
SP90N120CTK
Package:
TO-247-4L
Product Description
Product Overview
The SP90N120CTK is a 1200V Silicon Carbide (SiC) MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high-speed switching applications, it offers low capacitances, high blocking voltage with low RDS(on), and is easy to parallel and drive. This RoHS compliant component is suitable for demanding applications such as Power Factor Correction Modules, Switch Mode Power Supplies, Photovoltaic Inverters, UPS Power Supplies, and High Voltage DC/DC Converters.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Material: Silicon Carbide (SiC)
- Compliance: RoHS Compliant
- Package: TO-247-4L (1-Drain; 2-Source; 3-Kelvin Source; 4-Gate)
- Device Code: 90N120C
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 1200 | V | |||
| On-Resistance | RDS(on)TYP | @18V | 15 | m | ||
| Drain Current | ID | 90 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25) | 1200 | V | ||
| Gate-Source Voltage | VGSMAX | (Ta=25) | -10 | +22 | V | |
| Recommended Gate-Source Voltage | VGSop | (Ta=25) | -5 | +18 | V | |
| Continuous Drain Current | ID | (Tc=25) | 135 | A | ||
| Continuous Drain Current | ID | (Tc=100) | 90 | A | ||
| Pulsed Drain Current | IDM | (Ta=25) | 270 | A | ||
| Single Pulse Avalanche Energy | EAS | (Ta=25) | 4500 | mJ | ||
| Power Dissipation | PD | (Tc=25) | 503 | W | ||
| Power Dissipation | PD | (Tc=100) | 256 | W | ||
| Thermal Resistance Junction-Case | RJC | (Ta=25) | 0.3 | /W | ||
| Storage Temperature Range | TSTG | -55 | 175 | |||
| Operating Junction Temperature Range | TJ | -55 | 175 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=100uA | 1200 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=1200V, VGS=0V, TJ=25 | - | 1 | 50 | uA |
| Gate-Source Leakage Current | IGSS | VGS=-10/+22, VDS=0V, TJ=25 | - | - | 200 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS, ID =23mA, Tj=25 | 2.0 | 2.5 | 4.0 | V |
| Gate Threshold Voltage | VGS(th) | VGS=VDS, ID =23mA, Tj=175 | - | 1.8 | - | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=18V, ID=75A, Tj=25 | - | 15 | 19 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=18V, ID=75A, Tj=175 | - | 25 | - | m |
| Input Capacitance | Ciss | VDS=800V, VGS=0V, f=1MHz | - | 4760 | - | pF |
| Output Capacitance | Coss | VDS=800V, VGS=0V, f=1MHz | - | 243 | - | pF |
| Reverse Transfer Capacitance | Crss | VDS=800V, VGS=0V, f=1MHz | - | 8 | - | pF |
| Total Gate Charge | Qg | (4.5V) VDS=800V, VGS= -5/+18V, ID=75A | - | 210 | - | nC |
| Gate-Source Charge | Qgs | VDS=800V, VGS= -5/+18V, ID=75A | - | 89 | - | nC |
| Gate-Drain Charge | Qgd | VDS=800V, VGS= -5/+18V, ID=75A | - | 22 | - | nC |
| Turn-On Delay Time | Td(on) | VDS=800V, VGS= -5/+18V, ID=75A, RG=4.5 | - | 33 | - | nS |
| Rise Time | Tr | VDS=800V, VGS= -5/+18V, ID=75A, RG=4.5 | - | 36 | - | nS |
| Turn-Off Delay Time | Td(off) | VDS=800V, VGS= -5/+18V, ID=75A, RG=4.5 | - | 77 | - | nS |
| Fall Time | Tf | VDS=800V, VGS= -5/+18V, ID=75A, RG=4.5 | - | 22 | - | nS |
| Turn-On Energy | Eon | VDS=800V, VGS= -5/+18V, ID=75A, RG=4.5 | - | 2.24 | - | J |
| Turn-Off Energy | Eoff | VDS=800V, VGS= -5/+18V, ID=75A, RG=4.5 | - | 0.31 | - | J |
| Total Switching Loss | Etot | VDS=800V, VGS= -5/+18V, ID=75A, RG=4.5 | - | 2.55 | - | J |
| Reverse Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS= -5V, ISD=20A, TJ=25 | - | 4.0 | - | V |
| Diode Forward Voltage | VSD | VGS= -5V, ISD=20A, TJ=175 | - | 3.5 | - | V |
| Reverse Recovery Time | trr | VGS=-5V/+18V, ISD=70A, VR=800V, di/dt=1000A/s | - | 39.4 | - | nS |
| Reverse Recovery Charge | Qrr | VGS=-5V/+18V, ISD=70A, VR=800V, di/dt=1000A/s | - | 370 | - | nC |
| Peak Reverse Recovery Current | Irrm | VGS=-5V/+18V, ISD=70A, VR=800V, di/dt=1000A/s | - | 16.4 | - | A |
| Order Information | ||||||
| Device | Unit/Tube | |||||
| SP90N120CTK | TO-247-4L | 30 | ||||
2504101957_Siliup-SP90N120CTK_C22466827.pdf
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