N Channel Power MOSFET 150V Siliup SP015N05AGHTD with Fast Switching and Low RDS on Performance
Key Attributes
Model Number:
SP015N05AGHTD
Product Custom Attributes
Drain To Source Voltage:
150V
Current - Continuous Drain(Id):
180A
RDS(on):
6mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Number:
1 N-channel
Reverse Transfer Capacitance (Crss@Vds):
19pF
Input Capacitance(Ciss):
6.62nF
Output Capacitance(Coss):
536pF
Pd - Power Dissipation:
320W
Gate Charge(Qg):
82nC@10V
Mfr. Part #:
SP015N05AGHTD
Package:
TO-263
Product Description
Product Overview
The SP015N05AGHTD is a 150V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for PWM applications, hard switched and high frequency circuits, and power management. It is supplied in a TO-263 package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Device Code: SP015N05AGHTD
- Package: TO-263
- Technology: Advanced Split Gate Trench Technology
- Channel Type: N-Channel
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Units |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 150 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current (Tc=25) | ID | 180 | A | |||
| Continuous Drain Current (Tc=100) | ID | 120 | A | |||
| Pulsed Drain Current | IDM | 720 | A | |||
| Single Pulse Avalanche Energy | EAS | 1024 | mJ | |||
| Power Dissipation (Tc=25) | PD | 320 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 0.39 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Drain-Source Breakdown Voltage | BVDSS | ID = 250A, VGS = 0V | 150 | - | - | V |
| Drain Cut-Off Current | IDSS | VDS =120V, VGS = 0V | - | - | 1 | A |
| Gate Leakage Current | IGSS | VGS = 20V, VDS = 0V | - | - | 0.1 | A |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250A | 2 | 3 | 4 | V |
| Drain-Source ON Resistance | RDS(ON) | VGS = 10V, ID = 20A | - | 4.8 | 6 | m |
| Input Capacitance | Ciss | VDS=75V , VGS=0V , f=1MHz | - | 6620 | - | pF |
| Output Capacitance | Coss | - | 536 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 19 | - | pF | |
| Total Gate Charge | Qg | VDS=75V , VGS=10V , ID=20A | - | 82 | - | nC |
| Gate-Source Charge | Qgs | - | 38 | - | nC | |
| Gate-Drain Charge | Qg d | - | 23 | - | nC | |
| Turn-On Delay Time | td(on) | VDD=75V , VGS=10V , RG=6 ID=20A | - | 23 | - | nS |
| Rise Time | tr | - | 39 | - | nS | |
| Turn-Off Delay Time | td(off) | - | 49 | - | nS | |
| Fall Time | tf | - | 18 | - | nS | |
| Source-Drain Diode Forward Voltage | VSD | IS = 1A, VGS = 0V | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 180 | A | |
| Reverse Recovery Time | Trr | IS=140A, di/dt=100A/us, TJ=25 | - | 142 | - | nS |
| Reverse Recovery Charge | Qrr | - | 486 | - | nC |
Note: Single Pulse Avalanche Energy test condition: VDD=50V, VGS=10V, L=0.5mH, RG=25.
Package Information (TO-263):
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
|---|---|---|---|---|
| Min. | Max. | Min. | Max. | |
| A | 4.470 | 4.670 | 0.176 | 0.184 |
| A1 | 0.000 | 0.150 | 0.000 | 0.006 |
| B | 1.120 | 1.420 | 0.044 | 0.056 |
| b | 0.710 | 0.910 | 0.028 | 0.036 |
| b1 | 1.170 | 1.370 | 0.046 | 0.054 |
| c | 0.310 | 0.530 | 0.012 | 0.021 |
| c1 | 1.170 | 1.370 | 0.046 | 0.054 |
| D | 10.010 | 10.310 | 0.394 | 0.406 |
| E | 8.500 | 8.900 | 0.335 | 0.350 |
| e | 2.540 TYP. | 0.100 TYP. | ||
| e1 | 4.980 | 5.180 | 0.196 | 0.204 |
| L | 14.940 | 15.500 | 0.588 | 0.610 |
| L1 | 4.950 | 5.450 | 0.195 | 0.215 |
| L2 | 2.340 | 2.740 | 0.092 | 0.108 |
| L3 | 1.300 | 1.700 | 0.051 | 0.067 |
| 0 | 8 | 0 | 8 | |
| V | 5.600 REF. | 0.220 REF. |
2505291610_Siliup-SP015N05AGHTD_C48888445.pdf
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