Power MOSFET Siliup SP015N03BGHTF 150V N Channel Featuring Low RDSon and Split Gate Trench Technology
Key Attributes
Model Number:
SP015N03BGHTF
Product Custom Attributes
Drain To Source Voltage:
150V
Current - Continuous Drain(Id):
235A
Operating Temperature -:
-55℃~+150℃
RDS(on):
3.8mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
21pF
Number:
1 N-channel
Input Capacitance(Ciss):
8.538nF
Output Capacitance(Coss):
772pF
Pd - Power Dissipation:
430W
Gate Charge(Qg):
122nC@10V
Mfr. Part #:
SP015N03BGHTF
Package:
TO-247
Product Description
Product Overview
The SP015N03BGHTF is a 150V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), utilizing advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is designed for PWM applications, hard switched and high frequency circuits, and power management. It comes in a TO-247 package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP015N03BGHTF
- Technology: Advanced Split Gate Trench Technology
- Package: TO-247
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 150 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current (Tc=25) | ID | 235 | A | |||
| Continuous Drain Current (Tc=100) | ID | 160 | A | |||
| Pulsed Drain Current | IDM | 940 | A | |||
| Single Pulse Avalanche Energy1 | EAS | 1681 | mJ | |||
| Power Dissipation (Tc=25) | PD | 430 | W | |||
| Thermal Resistance Junction-to-Case | RθJC | 0.29 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | ID = 250μA, VGS = 0V | 150 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS = 80V, VGS = 0V | - | - | 1 | μA |
| Gate-Source Leakage Current | IGSS | VGS = ±20V, VDS = 0V | - | - | ±100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250μA | 2.5 | 3.5 | 4.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS = 10V, ID = 20A | - | 3.8 | 4.3 | mΩ |
| Input Capacitance | Ciss | VDS=75V , VGS=0V , f=1MHz | - | 8538 | - | pF |
| Output Capacitance | Coss | - | 772 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 21 | - | pF | |
| Total Gate Charge | Qg | VDS=75V , VGS=10V , ID=20A | - | 122 | - | nC |
| Gate-Source Charge | Qgs | - | 48 | - | ||
| Gate-Drain Charge | Qgd | - | 33 | - | ||
| Turn-On Delay Time | td(on) | VDD=75V, VGS=10V , RG=3.0Ω, ID=20A | - | 33 | - | nS |
| Rise Time | tr | - | 59 | - | ||
| Turn-Off Delay Time | td(off) | - | 89 | - | ||
| Fall Time | tf | - | 48 | - | ||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 235 | A | |
| Reverse Recovery Time | trr | IS=15A, di/dt=100A/us, TJ=25 | - | 112 | - | nS |
| Reverse Recovery Charge | Qrr | - | 426 | - | nC | |
1 The test condition is VDD=50V,VGS=10V,L=0.5mH,RG=25Ω
| TO-247 Package Information | ||||
|---|---|---|---|---|
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
| Min. | Max. | Min. | Max. | |
| A | 4.850 | 5.150 | 0.191 | 0.200 |
| A1 | 2.200 | 2.600 | 0.087 | 0.102 |
| b | 1.000 | 1.400 | 0.039 | 0.055 |
| b1 | 2.800 | 3.200 | 0.110 | 0.126 |
| b2 | 1.800 | 2.200 | 0.071 | 0.087 |
| c | 0.500 | 0.700 | 0.020 | 0.028 |
| c1 | 1.900 | 2.100 | 0.075 | 0.083 |
| D | 15.450 | 15.750 | 0.608 | 0.620 |
| E1 | 3.500 REF. | 0.138 REF. | ||
| E2 | 3.600 REF. | 0.142 REF. | ||
| L | 40.900 | 41.300 | 1.610 | 1.626 |
| L1 | 24.800 | 25.100 | 0.976 | 0.988 |
| L2 | 20.300 | 20.600 | 0.799 | 0.811 |
| Φ | 7.100 | 7.300 | 0.280 | 0.287 |
| e | 5.450 TYP. | 0.215 TYP. | ||
| H | 5.980 REF. | 0.235 REF. | ||
| h | 0.000 | 0.300 | 0.000 | 0.012 |
2504101957_Siliup-SP015N03BGHTF_C22385385.pdf
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