Low On Resistance N Channel MOSFET Siliup 2N7002KT7 with 60V Drain Source Voltage and ESD Protection
Key Attributes
Model Number:
2N7002KT7
Product Custom Attributes
Pd - Power Dissipation:
150mW
Drain To Source Voltage:
60V
Configuration:
-
Current - Continuous Drain(Id):
300mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
1.7Ω@10V;1.8Ω@4.5V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
5pF
Number:
1 N-channel
Output Capacitance(Coss):
10pF
Input Capacitance(Ciss):
28pF
Gate Charge(Qg):
1.7nC@4.5V
Mfr. Part #:
2N7002KT7
Package:
SOT-723
Product Description
Product Overview
The 2N7002KT7 is a 60V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for high power and current handling capabilities. This surface mount device features ESD protection up to 2KV and is suitable for applications such as battery switches and DC/DC converters. It offers a low on-resistance of 1.7 at 10V and 1.8 at 4.5V, with a continuous drain current of 300mA.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: 2N7002KT7
- Device Code: 72K
- Package Type: SOT-723
- Technology: N-Channel MOSFET
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 60 | V | |||
| Static Drain-Source On-Resistance | RDS(on) | @10V | 1.7 | |||
| Static Drain-Source On-Resistance | RDS(on) | @4.5V | 1.8 | |||
| Continuous Drain Current | ID | 300 | mA | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | 60 | V | |||
| Gate-Source Voltage | VGSS | 20 | V | |||
| Continuous Drain Current | ID | (Ta=25) | 300 | mA | ||
| Pulse Drain Current | IDM | (Tested) | 1200 | mA | ||
| Power Dissipation | PD | (Ta=25) | 150 | mW | ||
| Thermal Resistance Junction-to-Ambient | RJA | 833 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250A | 60 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=48V , VGS=0V | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 10 | uA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS , ID=250A | 1 | 1.5 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V, ID =200mA | - | 1.7 | 3 | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =4.5V, ID =200mA | - | 1.8 | 4 | |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=25V , VGS=0V , f=1MHz | - | 28 | - | pF |
| Output Capacitance | Coss | - | 10 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 5 | - | pF | |
| Total Gate Charge | Qg | VDS=10V , VGS=4.5V , ID=300mA | - | 1.7 | - | nC |
| Gate-Source Charge | Qgs | - | 0.35 | - | ||
| Gate-Drain Charge | Qg | - | 0.5 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=30V VGS=10V , RG=25 , ID=300mA | - | 3 | - | nS |
| Turn-On Rise Time | tr | - | 17 | - | ||
| Turn-Off Delay Time | td(off) | - | 10 | - | ||
| Turn-Off Fall Time | tf | - | 21 | - | ||
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Package Information | ||||||
| Package | Symbol | Dimensions In Millimeters | Min. | Max. | ||
| SOT-723 | A | 0.430 | 0.500 | |||
| SOT-723 | A1 | 0.000 | 0.050 | |||
| SOT-723 | b | 0.170 | 0.270 | |||
| SOT-723 | b1 | 0.270 | 0.370 | |||
| SOT-723 | c | 0.080 | 0.150 | |||
| SOT-723 | D | 1.150 | 1.250 | |||
| SOT-723 | E | 1.150 | 1.250 | |||
| SOT-723 | E1 | 0.750 | 0.850 | |||
| SOT-723 | e | 0.800TYP. | ||||
| SOT-723 | 7 REF. | |||||
2504101957_Siliup-2N7002KT7_C41349567.pdf
Related Products
NPN transistor YTL MMBTH10 with 30V collector base breakdown voltage and 650MHz transition frequency
Product OverviewThe MMBTH10 is an NPN transistor in a SOT-23 package, designed for general-purpose applications. It offers a breakdown voltage of 30V (V(BR)CBO) and 25V (V(BR)CEO), with a DC current gain (hFE) of 60 at 10V VCE and 4mA IC. Its low collector-emitter saturation voltage (VCE(sat)) of 0...
Planar Die Zener Diode Series Including XZT BZT52C18S Suitable for Medium Current Applications
Product OverviewThe BZT52C2V4S thru BZT52C43S series are planar die construction Zener diodes designed for general purpose, medium current applications. They are ideally suited for automated assembly processes and are available in lead-free versions. These diodes offer a wide range of Zener voltages ...
Compact surface mount bridge rectifier YONGYUTAI DB157S with plated solderable leads and ABS housing
Product OverviewThis series of bridge rectifiers features glass passivated die construction, offering a low forward voltage drop and high current/surge current capabilities. Designed for surface mount applications, these rectifiers are constructed from UL 94V-0 rated plastic material. They are ...
Power Field Effect Transistor XDS TX15N10B N Channel MOSFET Suitable for Battery Powered Circuits
Product DescriptionThe TX15N10B is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced process minimizes on-state resistance, making the device particularly suitable for low-voltage applications such as cellular phones, ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
