300V Super Junction MOSFET Siliup SP13HF30TO with Low RDSon and High Pulsed Drain Current Capability
Siliup Semiconductor SP13HF30TO 300V Super-Junction MOSFET
The SP13HF30TO is a 300V Super-Junction MOSFET from Siliup Semiconductor Technology Co. Ltd. It is designed for applications requiring fast switching, low gate charge, and low RDS(on). This MOSFET is 100% tested for single pulse avalanche energy, making it suitable for PWM applications, hard-switched, and high-frequency circuits, as well as power management solutions.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP13HF30TO
- Package: TOLL
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 300 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current (Tc=25) | ID | 135 | A | |||
| Continuous Drain Current (Tc=100) | ID | 90 | A | |||
| Pulsed Drain Current | IDM | 410 | A | |||
| Single Pulse Avalanche Energy1 | EAS | 1332 | mJ | |||
| Power Dissipation (Tc=25) | PD | 500 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 0.25 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS = 0V, ID = 250A | 300 | 350 | - | V |
| Drain-Source Leakage Current | IDSS | VDS = 240V, VGS = 0V | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS = 20V, VDS = 0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250A | 2.5 | 3.5 | 4.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS = 10V, ID = 35A | - | 13 | 16 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=50V , VGS=0V , f=1MHz | - | 5200 | - | pF |
| Output Capacitance | Coss | - | 340 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 6.5 | - | pF | |
| Switching Characteristics | ||||||
| Total Gate Charge | Qg | VDS=200V , VGS=10V , ID=40A | - | 85 | - | nC |
| Gate-Source Charge | Qgs | - | 26 | - | nC | |
| Gate-Drain Charge | Qgd | - | 22 | - | nC | |
| Turn-On Delay Time | Td(on) | VGS = 10V, VDS = 200V, ID=40A , RG = 20 | - | 49 | - | nS |
| Rise Time | Tr | - | 32 | - | nS | |
| Turn-Off Delay Time | Td(off) | - | 82 | - | nS | |
| Fall Time | Tf | - | 8 | - | nS | |
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 135 | A | |
| Reverse Recovery Time | trr | IS=40A,di/dt=100A/us, Tj=25 | - | 118 | - | nS |
| Reverse Recovery Charge | Qrr | - | 0.56 | - | uC | |
1 The test condition is VDD=50V, VGS=10V, L=0.5mH, RG=25.
Order Information
| Device | Package | Unit/Tape |
|---|---|---|
| SP13HF30TO | TOLL | 2000 |
TOLL Package Information (Dimensions in Millimeters)
| Symbol | Dimensions | Min. | Nom. | Max. |
|---|---|---|---|---|
| A | 2.20 | 2.30 | 2.40 | |
| b | 0.65 | 0.75 | 0.85 | |
| C | 0.508 | |||
| D | 10.25 | 10.40 | 10.55 | |
| D1 | 2.85 | 3.00 | 3.15 | |
| E | 9.75 | 9.90 | 10.05 | |
| E1 | 9.65 | 9.80 | 9.95 | |
| E2 | 8.95 | 9.10 | 9.25 | |
| E3 | 7.25 | 7.40 | 7.55 | |
| e | BSC | 1.20 | ||
| F | 1.05 | 1.20 | 1.35 | |
| H | 11.55 | 11.70 | 11.85 | |
| H1 | 6.03 | 6.18 | 6.33 | |
| H2 | 6.85 | 7.00 | 7.15 | |
| H3 | BSC | 3.00 | ||
| L | 1.55 | 1.70 | 1.85 | |
| L1 | 0.55 | 0.7 | 0.85 | |
| L2 | 0.45 | 0.6 | 0.75 | |
| M | REF. | 0.08 | ||
| 8 | 10 | 12 | ||
| K | 4.25 | 4.40 | 4.55 |
2412041501_Siliup-SP13HF30TO_C42404764.pdf
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