300V Super Junction MOSFET Siliup SP13HF30TO with Low RDSon and High Pulsed Drain Current Capability

Key Attributes
Model Number: SP13HF30TO
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
300V
Current - Continuous Drain(Id):
135A
Operating Temperature -:
-55℃~+150℃
RDS(on):
16mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
6.5pF
Number:
1 N-channel
Output Capacitance(Coss):
340pF
Input Capacitance(Ciss):
5.2nF
Pd - Power Dissipation:
500W
Gate Charge(Qg):
85nC
Mfr. Part #:
SP13HF30TO
Package:
TOLL
Product Description

Siliup Semiconductor SP13HF30TO 300V Super-Junction MOSFET

The SP13HF30TO is a 300V Super-Junction MOSFET from Siliup Semiconductor Technology Co. Ltd. It is designed for applications requiring fast switching, low gate charge, and low RDS(on). This MOSFET is 100% tested for single pulse avalanche energy, making it suitable for PWM applications, hard-switched, and high-frequency circuits, as well as power management solutions.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Product Code: SP13HF30TO
  • Package: TOLL

Technical Specifications

Parameter Symbol Conditions Min. Typ. Max. Unit
Absolute Maximum Ratings
Drain-Source Voltage VDS 300 V
Gate-Source Voltage VGS 20 V
Continuous Drain Current (Tc=25) ID 135 A
Continuous Drain Current (Tc=100) ID 90 A
Pulsed Drain Current IDM 410 A
Single Pulse Avalanche Energy1 EAS 1332 mJ
Power Dissipation (Tc=25) PD 500 W
Thermal Resistance Junction-to-Case RJC 0.25 /W
Storage Temperature Range TSTG -55 150
Operating Junction Temperature Range TJ -55 150
Electrical Characteristics
Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250A 300 350 - V
Drain-Source Leakage Current IDSS VDS = 240V, VGS = 0V - - 1 uA
Gate-Source Leakage Current IGSS VGS = 20V, VDS = 0V - - 100 nA
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 2.5 3.5 4.5 V
Static Drain-Source On-Resistance RDS(ON) VGS = 10V, ID = 35A - 13 16 m
Dynamic Characteristics
Input Capacitance Ciss VDS=50V , VGS=0V , f=1MHz - 5200 - pF
Output Capacitance Coss - 340 - pF
Reverse Transfer Capacitance Crss - 6.5 - pF
Switching Characteristics
Total Gate Charge Qg VDS=200V , VGS=10V , ID=40A - 85 - nC
Gate-Source Charge Qgs - 26 - nC
Gate-Drain Charge Qgd - 22 - nC
Turn-On Delay Time Td(on) VGS = 10V, VDS = 200V, ID=40A , RG = 20 - 49 - nS
Rise Time Tr - 32 - nS
Turn-Off Delay Time Td(off) - 82 - nS
Fall Time Tf - 8 - nS
Diode Characteristics
Diode Forward Voltage VSD VGS=0V , IS=1A , TJ=25 - - 1.2 V
Maximum Body-Diode Continuous Current IS - - 135 A
Reverse Recovery Time trr IS=40A,di/dt=100A/us, Tj=25 - 118 - nS
Reverse Recovery Charge Qrr - 0.56 - uC

1 The test condition is VDD=50V, VGS=10V, L=0.5mH, RG=25.

Order Information

Device Package Unit/Tape
SP13HF30TO TOLL 2000

TOLL Package Information (Dimensions in Millimeters)

Symbol Dimensions Min. Nom. Max.
A 2.20 2.30 2.40
b 0.65 0.75 0.85
C 0.508
D 10.25 10.40 10.55
D1 2.85 3.00 3.15
E 9.75 9.90 10.05
E1 9.65 9.80 9.95
E2 8.95 9.10 9.25
E3 7.25 7.40 7.55
e BSC 1.20
F 1.05 1.20 1.35
H 11.55 11.70 11.85
H1 6.03 6.18 6.33
H2 6.85 7.00 7.15
H3 BSC 3.00
L 1.55 1.70 1.85
L1 0.55 0.7 0.85
L2 0.45 0.6 0.75
M REF. 0.08
8 10 12
K 4.25 4.40 4.55

2412041501_Siliup-SP13HF30TO_C42404764.pdf
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