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quality 80V N Channel Power MOSFET Siliup SP80N03BGHTQ Low RDSon Suitable for Power Supply Applications factory
quality 80V N Channel Power MOSFET Siliup SP80N03BGHTQ Low RDSon Suitable for Power Supply Applications factory

80V N Channel Power MOSFET Siliup SP80N03BGHTQ Low RDSon Suitable for Power Supply Applications

Key Attributes
Model Number: SP80N03BGHTQ
Product Custom Attributes
Drain To Source Voltage:
80V
Current - Continuous Drain(Id):
130A
RDS(on):
3.8mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
26pF
Number:
1 N-channel
Output Capacitance(Coss):
500pF
Pd - Power Dissipation:
160W
Input Capacitance(Ciss):
4.36nF
Gate Charge(Qg):
42nC@10V
Mfr. Part #:
SP80N03BGHTQ
Package:
TO-220
Product Description

Product Overview

The SP80N03BGHTQ is an 80V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for power switching applications. It features fast switching, low gate charge, and low RDS(on), utilizing advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for DC-DC converters and uninterruptible power supplies.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Product Code: SP80N03BGHTQ
  • Device Code: 80N03BGH
  • Channel Type: N-Channel
  • Technology: Advanced Split Gate Trench
  • Package: TO-220-3L
  • Origin: Siliup Semiconductor Technology Co. Ltd.

Technical Specifications

Parameter Symbol Test Condition Min Typ Max Unit
Drain-Source Voltage VDSS 80 V
Gate-Source Voltage VGSS 20 V
Continuous Drain Current (Tc=25C) ID 130 A
Continuous Drain Current (Tc=100C) ID 90 A
Pulse Drain Current IDM Tested 520 A
Single Pulse Avalanche Energy EAS 576 mJ
Power Dissipation (Tc=25C) PD 160 W
Thermal Resistance Junction-to-Case RJC 0.78 C/W
Maximum Junction Temperature TJ -55 150 C
Storage Temperature Range TSTG -55 150 C
Drain-Source Breakdown Voltage BVDSS ID = 250A, VGS = 0V 80 - - V
Zero Gate Voltage Drain Current IDSS VDS = 64V, VGS = 0V - - 1 uA
Gate Leakage Current IGSS VGS = 20V, VDS = 0V - - 100 nA
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 2.0 3.0 4.0 V
Drain-Source On-state Resistance RDS(ON) VGS = 10V, ID = 20A - 3.8 4.8 m
Input Capacitance Ciss VGS=0V, VDS=40V,F=1MHz - 4360 - pF
Output Capacitance Coss - 500 - pF
Reverse Transfer Capacitance Crss - 26 - pF
Total Gate Charge Qg VDS=40V, VGS=10V, ID=20A - 42 - nC
Gate-Source Charge Qgs - 15 - nC
Gate-Drain Charge Qgd - 20 - nC
Turn-On Delay Time td(on) VDD=40V, ID=20A, VGS=10V, RG=3 - 17 - nS
Rise Time tr - 39 - nS
Turn-Off Delay Time td(off) - 64 - nS
Fall Time tf - 42 - nS
Source-Drain Diode Forward Voltage VSD IS=1A , TJ=25 - - 1.2 V
Maximum Body-Diode Continuous Current IS - - 130 A
Reverse Recovery Time trr IS=50 A,di/dt=100 A/sTJ=25 - 45 - nS
Reverse Recovery Charge Qrr - 56 - nC

Package Information (TO-220-3L)

Symbol Dimensions In Millimeters Dimensions In Inches
Min. Max. Min. Max.
A 4.400 4.600 0.173 0.181
A1 2.250 2.550 0.089 0.100
b 0.710 0.910 0.028 0.036
b1 1.170 1.370 0.046 0.054
c 0.330 0.650 0.013 0.026
c1 1.200 1.400 0.047 0.055
D 9.910 10.250 0.390 0.404
E 8.950 9.750 0.352 0.384
E1 12.650 13.050 0.498 0.514
e 2.540 TYP. 0.100 TYP.
e1 4.980 5.180 0.196 0.204
F 2.650 2.950 0.104 0.116
H 7.900 8.100 0.311 0.319
h 0.000 0.300 0.000 0.012
L 12.900 13.400 0.508 0.528
L1 2.850 3.250 0.112 0.128
V 6.900 REF. 0.276 REF.
3.400 3.800 0.134 0.150

2504101957_Siliup-SP80N03BGHTQ_C22466784.pdf
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