Surface Mount 100V N Channel MOSFET Siliup SP010N35NK ROHS Compliant Halogen Free Suitable for DC DC Conversion
Key Attributes
Model Number:
SP010N35NK
Product Custom Attributes
Pd - Power Dissipation:
45W
Drain To Source Voltage:
100V
Configuration:
-
Current - Continuous Drain(Id):
23A
Operating Temperature -:
-55℃~+150℃
RDS(on):
35mΩ@10V;40mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
63pF
Number:
1 N-channel
Output Capacitance(Coss):
102pF
Input Capacitance(Ciss):
2.631nF
Gate Charge(Qg):
45nC@10V
Mfr. Part #:
SP010N35NK
Package:
PDFN-8L(5x6)
Product Description
Product Overview
The SP010N35NK is a 100V N-Channel MOSFET designed by Siliup Semiconductor Technology Co., Ltd. It features fast switching speeds, a surface mount package, and is ROHS Compliant & Halogen-Free. This MOSFET is 100% Single Pulse avalanche energy tested and is suitable for applications such as DC-DC Converters and Motor Control. It is available in a PDFN5X6-8L package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co., Ltd.
- Product Code: SP010N35NK
- Channel Type: N-Channel
- Voltage Rating: 100V
- Package Type: PDFN5X6-8L
- Compliance: ROHS Compliant & Halogen-Free
- Testing: 100% Single Pulse avalanche energy Test
- Device Code: 010N35
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 100 | V | |||
| RDS(on) | @10V | 35 | m | |||
| RDS(on) | @4.5V | 40 | m | |||
| Continuous Drain Current | ID | 23 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | (Ta=25) | 100 | V | ||
| Gate-Source Voltage | VGSS | (Ta=25) | 20 | V | ||
| Continuous Drain Current | ID | (Tc=25C) | 23 | A | ||
| Continuous Drain Current | ID | (Tc=100C) | 15 | A | ||
| Pulse Drain Current Tested | IDM | 92 | A | |||
| Single pulsed avalanche energy | EAS | 100 | mJ | |||
| Power Dissipation | PD | (Tc=25C) | 45 | W | ||
| Thermal Resistance Junction-to-Case | RJC | 2.8 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 100 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=80V , VGS=0V , TJ=25 | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 1.0 | 1.5 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V, ID =10A | - | 35 | 50 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =4.5V, ID =6A | - | 40 | 55 | m |
| Input Capacitance | Ciss | VDS=50V , VGS=0V , f=1MHz | - | 2631 | - | pF |
| Output Capacitance | Coss | VDS=50V , VGS=0V , f=1MHz | - | 102 | - | pF |
| Reverse Transfer Capacitance | Crss | VDS=50V , VGS=0V , f=1MHz | - | 63 | - | pF |
| Total Gate Charge | Qg | VDS=50V , VGS=10V , ID=10A | - | 45 | - | nC |
| Gate-Source Charge | Qgs | VDS=50V , VGS=10V , ID=10A | - | 7.9 | - | |
| Gate-Drain Charge | Qg d | VDS=50V , VGS=10V , ID=10A | - | 8.7 | - | |
| Turn-On Delay Time | Td(on) | VDD=50V ,VGS=10V , RG=3, ID=10A | - | 9 | - | nS |
| Rise Time | Tr | VDD=50V ,VGS=10V , RG=3, ID=10A | - | 8 | - | |
| Turn-Off Delay Time | Td(off) | VDD=50V ,VGS=10V , RG=3, ID=10A | - | 32 | - | |
| Fall Time | Tf | VDD=50V ,VGS=10V , RG=3, ID=10A | - | 9 | - | |
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 23 | A | |
| Reverse recover time | Trr | IS=20A, di/dt=100A/us, TJ=25 | - | 40 | - | nS |
| Reverse recovery charge | Qrr | IS=20A, di/dt=100A/us, TJ=25 | - | 47 | - | nC |
| Package Information | ||||||
| Symbol | Dimensions In Millimeters | Dimensions In Inches | Min. | Max. | Min. | Max. |
| A | 0.900 - 1.000 | 0.035 - 0.039 | ||||
| A3 | 0.254REF. | 0.010REF. | ||||
| D | 4.944 - 5.096 | 0.195 - 0.201 | ||||
| E | 5.974 - 6.126 | 0.235 - 0.241 | ||||
| D1 | 3.910 - 4.110 | 0.154 - 0.162 | ||||
| E1 | 3.375 - 3.575 | 0.133 - 0.141 | ||||
| D2 | 4.824 - 4.976 | 0.190 - 0.196 | ||||
| E2 | 5.674 - 5.826 | 0.223 - 0.229 | ||||
| k | 1.190 - 1.390 | 0.047 - 0.055 | ||||
| b | 0.350 - 0.450 | 0.014 - 0.018 | ||||
| e | 1.270TYP. | 0.050TYP. | ||||
| L | 0.559 - 0.711 | 0.022 - 0.028 | ||||
| L1 | 0.424 - 0.576 | 0.017 - 0.023 | ||||
| H | 0.574 - 0.726 | 0.023 - 0.029 | ||||
| 10 - 12 | 10 - 12 | |||||
2504101957_Siliup-SP010N35NK_C41354989.pdf
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