40V P Channel MOSFET Siliup SP40P18P8 with Low Gate Charge and Tested Single Pulse Avalanche Energy
Key Attributes
Model Number:
SP40P18P8
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
10A
RDS(on):
18mΩ@10V;22mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.7V@250uA
Reverse Transfer Capacitance (Crss@Vds):
180pF
Number:
1 P-Channel
Output Capacitance(Coss):
215pF
Pd - Power Dissipation:
2W
Input Capacitance(Ciss):
1.75nF
Gate Charge(Qg):
24nC@10V
Mfr. Part #:
SP40P18P8
Package:
SOP-8L
Product Description
Product Overview
The SP40P18P8 is a 40V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), making it suitable for power switching applications, hard-switched and high-frequency circuits, and uninterruptible power supplies. The device is 100% tested for single pulse avalanche energy.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Device Code: 40P18
- Package: SOP-8L
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | -40 | V | ||||
| RDS(on)TYP | @-10V | 18 | m | |||
| RDS(on)TYP | @-4.5V | 22 | m | |||
| ID | -10 | A | ||||
| Absolute maximum ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | -40 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | -10 | A | |||
| Pulsed Drain Current | IDM | -40 | A | |||
| Single Pulse Avalanche Energy | EAS | 98 | mJ | |||
| Power Dissipation | PD | 2 | W | |||
| Junction-to-Ambient Thermal Resistance | RJA | 62.5 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250uA | -40 | V | ||
| Drain-Source Leakage Current | IDSS | VDS=-32V , VGS=0V | -1 | uA | ||
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =-250uA | -1.1 | -1.7 | -2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-10V , ID=-5A | 18 | 25 | m | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-4.5V , ID=-5A | 22 | 30 | m | |
| Input Capacitance | Ciss | VDS=-20V , VGS=0V , f=1MHz | 1750 | pF | ||
| Output Capacitance | Coss | 215 | pF | |||
| Reverse Transfer Capacitance | Crss | 180 | pF | |||
| Total Gate Charge | Qg | VDS=-20V , VGS=-10V , ID=-5A | 24 | nC | ||
| Gate-Source Charge | Qgs | 3.5 | ||||
| Gate-Drain Charge | Qg d | 6 | ||||
| Turn-On Delay Time | Td(on) | VDD=-20V VGS=-10V , RG=2, ID=-5A | 9 | nS | ||
| Rise Time | Tr | 8 | ||||
| Turn-Off Delay Time | Td(off) | 28 | ||||
| Fall Time | Tf | 10 | ||||
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A | -1.2 | V | ||
| Package Information | ||||||
| Package | Dimensions (mm) | Min. | Max. | |||
| SOP-8L | A | 1.35 | 1.75 | |||
| A1 | 0.10 | 0.25 | ||||
| A2 | 1.35 | 1.55 | ||||
| b | 0.33 | 0.51 | ||||
| c | 0.17 | 0.25 | ||||
| D | 4.80 | 5.00 | ||||
| e | 1.27 REF. | |||||
| E | 5.80 | 6.20 | ||||
| E1 | 3.80 | 4.00 | ||||
| L | 0.40 | 1.27 | ||||
| 0 | 8 | |||||
2504101957_Siliup-SP40P18P8_C41355198.pdf
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