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quality N Channel MOSFET SP60N03GHTD 60V 140A Low RDSon TO263 Package Ideal for Power Switching Applications factory
quality N Channel MOSFET SP60N03GHTD 60V 140A Low RDSon TO263 Package Ideal for Power Switching Applications factory

N Channel MOSFET SP60N03GHTD 60V 140A Low RDSon TO263 Package Ideal for Power Switching Applications

Key Attributes
Model Number: SP60N03GHTD
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
140A
Operating Temperature -:
-55℃~+150℃
RDS(on):
3.3mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
41pF
Number:
1 N-channel
Input Capacitance(Ciss):
4.25nF
Output Capacitance(Coss):
975pF
Pd - Power Dissipation:
145W
Gate Charge(Qg):
42nC@10V
Mfr. Part #:
SP60N03GHTD
Package:
TO-263
Product Description

Product Overview

The SP60N03GHTD is a 60V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for power switching applications, hard switched and high frequency circuits, and uninterruptible power supplies. The device is available in a TO-263 package.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Product Code: SP60N03GHTD
  • Technology: Advanced Split Gate Trench Technology
  • Package: TO-263
  • Channel Type: N-Channel

Technical Specifications

Parameter Symbol Rating Unit Test Condition
Drain-Source Voltage VDSS 60 V
Gate-Source Voltage VGSS 20 V
Continuous Drain Current (Tc=25C) ID 140 A (Tc=25C)
Continuous Drain Current (Tc=100C) ID 95 A (Tc=100C)
Pulse Drain Current IDM 560 A Tested
Single Pulse Avalanche Energy EAS 784 mJ 1
Power Dissipation (Tc=25C) PD 145 W (Tc=25C)
Thermal Resistance Junction-to-Case RJC 0.86 C/W
Maximum Junction Temperature TJ -55 to 150 C
Storage Temperature Range TSTG -55 to 150 C
Drain-Source Breakdown Voltage BVDSS 60 V VGS=0V, ID=250mA
Zero Gate Voltage Drain Current IDSS - 1 uA VDS=48V, VGS=0V
Gate Leakage Current IGSS - 100 nA VGS=20V, VDS=0V
Gate Threshold Voltage VGS(th) 2 2.5 4 V VDS=VGS, ID=250uA
Drain-Source On-state Resistance RDS(ON) - 3.3 4.2 m VGS=10V, ID=20A
Input Capacitance Ciss - 4250 - pF VGS=0V, VDS=30V,F=1MHz
Output Capacitance Coss - 975 - pF
Reverse Transfer Capacitance Crss - 41 - pF
Total Gate Charge Qg - 42 - nC VDS=30V, VGS=10V, ID=20A
Gate-Source Charge Qgs - 12 - nC
Gate-Drain Charge Qgd - 10 - nC
Turn-On Delay Time td(on) - 13.5 - nS VDD=30V, ID=20A, VGS=10V, RG=3
Rise Time tr - 96 - nS
Turn-Off Delay Time td(off) - 40 - nS
Fall Time tf - 115 - nS
Source-Drain Diode Forward Voltage VSD - 1.2 V IS=1A, TJ=25
Maximum Body-Diode Continuous Current IS - 140 A
Reverse Recovery Time trr - 35 nS IS=60 A, di/dt=100 A/sTJ=25
Reverse Recovery Charge Qrr - 30 nC

Note 1: The test condition is VDD=30V, VGS=10V, L=0.5mH, RG=25.

Order Information: SP60N03GHTD in TO-263 package, 800 units per tape.

Marking: Device Code: 60N03GH, Week Code: **


2504101957_Siliup-SP60N03GHTD_C22385362.pdf
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