650V Silicon Carbide MOSFET Siliup SP75N65CTF Designed for High Current and High Voltage Applications
Key Attributes
Model Number:
SP75N65CTF
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
112A
Operating Temperature -:
-55℃~+175℃
RDS(on):
32mΩ
Gate Threshold Voltage (Vgs(th)):
4V
Reverse Transfer Capacitance (Crss@Vds):
19pF
Input Capacitance(Ciss):
3.09nF
Pd - Power Dissipation:
454W
Output Capacitance(Coss):
251pF
Gate Charge(Qg):
125nC
Mfr. Part #:
SP75N65CTF
Package:
TO-247
Product Description
Product Overview
The SP75N65CTF is a 650V Silicon Carbide (SiC) MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for high-speed switching applications with low capacitances. It offers high blocking voltage combined with low RDS(on), making it easy to parallel and simple to drive. This RoHS compliant device is suitable for a wide range of power electronics applications including Power Factor Correction Modules, Switch Mode Power Supplies, Photovoltaic Inverters, UPS Power Supplies, Motor Drives, and High Voltage DC/DC Converters.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Material: SiC (Silicon Carbide)
- Compliance: RoHS Compliant
- Package: TO-247
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 650 | V | |||
| Gate-Source Voltage | VGSMAX | -10/+22 | V | |||
| Recommended Gate-Source Voltage | VGSop | -5/+18 | V | |||
| Continuous Drain Current (Tc=25) | ID | 112 | A | |||
| Continuous Drain Current (Tc=100) | ID | 75 | A | |||
| Pulsed Drain Current | IDM | 250 | A | |||
| Total Power Dissipation (Tc=25) | PD | 454 | W | |||
| Total Power Dissipation (Tc=100) | PD2 | 232 | W | |||
| Thermal Resistance Junction-Case | RJC | 0.33 | /W | |||
| Storage Temperature Range | TSTG | -55 | 175 | |||
| Operating Junction Temperature Range | TJ | -55 | 175 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=100uA | 650 | -- | -- | V |
| Drain-Source Leakage Current | IDSS | VDS=650V, VGS=0V, TJ=25 | -- | 3 | 100 | uA |
| Gate-Source Leakage Current | IGSS | VGS=-5V~+20V, VDS=0V, TJ=25 | -- | -- | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS, ID=12mA, Tj=25 | 2.0 | 2.8 | 4.0 | V |
| Gate Threshold Voltage | VGS(th) | VGS=VDS, ID=12mA, Tj=175 | -- | 2.0 | -- | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=18V, ID=40A, Tj=25 | -- | 25 | 32 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=18V, ID=40A, Tj=175 | -- | 38 | -- | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=15V, ID=40A, Tj=25 | -- | 35 | -- | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=15V, ID=40A, Tj=175 | -- | 42 | -- | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=600V, VGS=0V, f=1MHz, VAC=25mV | -- | 3090 | -- | pF |
| Output Capacitance | Coss | -- | 251 | -- | pF | |
| Reverse Transfer Capacitance | Crss | -- | 19 | -- | pF | |
| Total Gate Charge (4.5V) | Qg | VDS=400V, VGS= -3/+18V, ID=40A | -- | 125 | -- | nC |
| Gate-Source Charge | Qgs | -- | 36 | -- | nC | |
| Gate-Drain Charge | Qgd | -- | 38 | -- | nC | |
| Turn-On Delay Time | Td(on) | VDS=400V, VGS= 3.5/+18V, ID=40A, RG=3.3 | -- | 13 | -- | ns |
| Rise Time | Tr | -- | 26.5 | -- | ns | |
| Turn-Off Delay Time | Td(off) | -- | 23 | -- | ns | |
| Fall Time | Tf | -- | 12 | -- | ns | |
| Turn-On Energy | Eon | -- | 219 | -- | J | |
| Turn-Off Energy | Eoff | -- | 95 | -- | J | |
| Total Switching Loss | Etot | -- | 314 | -- | J | |
| Reverse Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS= -5V, ISD=20A, TJ=25 | -- | 3.7 | -- | V |
| Diode Forward Voltage | VSD | VGS= -5V, ISD=20A, TJ=175 | -- | 3.5 | -- | V |
| Diode forward current | IS | VGS= -2V, TJ=25 | -- | -- | 76 | A |
| Diode forward current | IS | VGS= -2V, TJ=175 | -- | -- | 44 | A |
| Reverse Recovery Time | trr | VGS=-3.5V/+18V, ISD=40A, VR=400V, di/dt=3000A/s | -- | 32 | -- | ns |
| Reverse Recovery Charge | Qrr | -- | 195 | -- | nC | |
| Peak Reverse Recovery Current | Irrm | -- | 20 | -- | A | |
| Package Information (TO-247-3L) | ||||||
| Dimension | A | 4.850 | 5.150 | 0.191 | 0.200 | |
| Dimension | A1 | 2.200 | 2.600 | 0.087 | 0.102 | |
| Dimension | b | 1.000 | 1.400 | 0.039 | 0.055 | |
| Dimension | b1 | 2.800 | 3.200 | 0.110 | 0.126 | |
| Dimension | b2 | 1.800 | 2.200 | 0.071 | 0.087 | |
| Dimension | c | 0.500 | 0.700 | 0.020 | 0.028 | |
| Dimension | c1 | 1.900 | 2.100 | 0.075 | 0.083 | |
| Dimension | D | 15.450 | 15.750 | 0.608 | 0.620 | |
| Dimension | E1 | 3.500 REF. | 0.138 REF. | |||
| Dimension | E2 | 3.600 REF. | 0.142 REF. | |||
| Dimension | L | 40.900 | 41.300 | 1.610 | 1.626 | |
| Dimension | L1 | 24.800 | 25.100 | 0.976 | 0.988 | |
| Dimension | L2 | 20.300 | 20.600 | 0.799 | 0.811 | |
| Dimension | 7.100 | 7.300 | 0.280 | 0.287 | ||
| Dimension | e | 5.450 TYP. | 0.215 TYP. | |||
| Dimension | H | 5.980 REF. | 0.235 REF. | |||
| Dimension | h | 0.000 | 0.300 | 0.000 | 0.012 | |
2505131730_Siliup-SP75N65CTF_C48888557.pdf
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