Npn silicon epitaxial planar transistor Slkor 2SC3356DW-C designed for vhf uhf catv low noise high gain
Key Attributes
Model Number:
2SC3356DW-C
Product Custom Attributes
Emitter-Base Voltage(Vebo):
3V
Current - Collector Cutoff:
1uA
DC Current Gain:
250@20mA,10V
Transition Frequency(fT):
7GHz
Vce Saturation(VCE(sat)):
300mV@50mA,5mA
Type:
NPN
Pd - Power Dissipation:
200mW
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
12V
Operating Temperature:
-50℃~+150℃
Mfr. Part #:
2SC3356DW-C
Package:
SOT-363
Product Description
Product Overview
The 2SC3356DW is an NPN Silicon Epitaxial Planar Transistor designed for low-noise and high-gain applications. It offers high power gain and is particularly suitable for low noise amplifier circuits operating in the VHF, UHF, and CATV frequency bands.
Product Attributes
- Brand: SLKORMicro (implied by website URL)
- Type: NPN Silicon Epitaxial Planar Transistor
Technical Specifications
| Symbol | Parameter | Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Maximum Ratings (Ta=25 unless otherwise noted) | ||||||
| VCBO | Collector-Base Voltage | 20 | V | |||
| VCEO | Collector-Emitter Voltage | 12 | V | |||
| VEBO | Emitter-Base Voltage | 3 | V | |||
| IC | Collector Current | 100 | mA | |||
| PC | Collector Power Dissipation | 200 | mW | |||
| RJA | Thermal Resistance From Junction To Ambient | 625 | C/W | |||
| TJ,Tstg | Operation Junction and Storage Temperature Range | -50 | 150 | C | ||
| Electrical Characteristics (TJ=25 unless otherwise noted) | ||||||
| V(BR)CBO | Collector-base breakdown voltage | IC=100A, IE=0 | 20 | -- | -- | V |
| V(BR)CEO | Collector-emitter breakdown voltage | IC=1mA, IB=0 | 12 | -- | -- | V |
| V(BR)EBO | Emitter-base breakdown voltage | IE=100A, IC=0 | 3 | -- | -- | V |
| ICBO | Collector cut-off current | VCB=10 V , IE=0 | -- | -- | 1 | A |
| IEBO | Emitter cut-off current | VEB=1V , IC=0 | -- | -- | 1 | A |
| hFE | DC current gain | VCE=10V, IC= 20mA | 50 | -- | 250 | |
| VCE(sat) | Collector-emitter saturation voltage | IC=50 mA, IB= 5mA | -- | -- | 0.3 | V |
| VBE(sat) | Base-emitter saturation voltage | IC=50 mA, IB= 5mA | -- | -- | 1.15 | V |
| NF | Noise Figure | VCB=10V, IC=7mA, f=1GHz | -- | 1 | 2 | dB |
| Cob | Collector output capacitance | VCE=10V, IE=0mA, f=1MHz | -- | 0.55 | 1 | pF |
| fT | Transition frequency | VCE=10V, IC= 20mA | -- | 7 | -- | GHz |
Package Information
| Symbol | Dimensions in Millimeters (mm) | Dimensions In Inches | ||
|---|---|---|---|---|
| Min | Max | Min | Max | |
| A | 0.900 | 1.100 | 0.035 | 0.043 |
| A1 | 0.000 | 0.100 | 0.000 | 0.004 |
| A2 | 0.900 | 1.000 | 0.035 | 0.039 |
| b | 0.150 | 0.350 | 0.006 | 0.014 |
| c | 0.100 | 0.150 | 0.004 | 0.006 |
| D | 2.000 | 2.200 | 0.079 | 0.087 |
| E | 1.150 | 1.350 | 0.045 | 0.053 |
| E1 | 2.150 | 2.400 | 0.085 | 0.094 |
| e | 0.650 TYP | 0.026 TYP | ||
| e1 | 0.525 REF | 0.021 REF | ||
| L | ||||
| L1 | 0.260 | 0.460 | 0.010 | 0.018 |
| 0 | 8 | 0 | 8 | |
hFE Classification
| Rank | Range |
|---|---|
| A | 50-100 |
| B | 80-160 |
| C | 125-250 |
2412170958_Slkor-2SC3356DW-C_C42415152.pdf
Related Products
High surge current fast recovery rectifier diode ZHIDE MURS220 with plastic molded epoxy UL 94V 0 flame retardant
Product OverviewThe MURS220-MURS2100 series are plastic encapsulated epitaxial fast recovery rectifier diodes designed for high-reliability applications. They feature low reverse leakage, high forward surge capability, and are guaranteed for high-temperature soldering (260/10 seconds). The ...
High Forward Surge Capability and Low Reverse Leakage Surface Mount Rectifier ZHIDE RS3M for Electronics
Product OverviewThe RS3A-RS3M series are surface mount super fast recovery rectifiers designed for high-speed switching applications. They offer low reverse leakage, high forward surge capability, and high reliability, making them suitable for demanding electronic circuits. These diodes are ...
Power electronics IGBT YANGJIE MG150HF12TLC1 featuring trench technology and ultra fast soft recovery anti parallel FWD
Product OverviewThe MG150HF12TLC1 S-M409 is a high-performance IGBT module designed for demanding power electronics applications. It features low VCE(sat) with Trench technology, a positive temperature coefficient for VCE(sat), high short circuit capability, and an integrated ultra-fast & soft ...
Gallium Nitride Gan Hemts for Broadband Rf Applications Featuring Wolfspeed CGHV40050P Transistor
Product Overview The MACOM CGHV40050 is an unmatched Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) designed for general-purpose, broadband RF and microwave applications up to 4 GHz. Operating from a 50-volt rail, this device offers high efficiency, high gain, and wide bandwidth ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
