Complementary MOSFET Siliup SP1022CP8 100V Drain Source Voltage 2.5A Continuous Current SOP8L Package

Key Attributes
Model Number: SP1022CP8
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
2.5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
160mΩ;230mΩ
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
19pF;18pF
Number:
1 N-Channel + 1 P-Channel
Output Capacitance(Coss):
30pF
Input Capacitance(Ciss):
498pF;721pF
Pd - Power Dissipation:
2W
Gate Charge(Qg):
13.6nC@10V;16nC@10V
Mfr. Part #:
SP1022CP8
Package:
SOP-8
Product Description

SP1022CP8 100V Complementary MOSFET

The SP1022CP8 is a 100V complementary MOSFET from Siliup Semiconductor Technology Co. Ltd. This device offers high power and current handling capabilities, making it suitable for applications such as battery protection, load switching, and power management. It features a lead-free product acquisition and is available in a surface mount SOP-8L package. The SP1022CP8 has undergone 100% single pulse avalanche energy testing.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Product Type: Complementary MOSFET
  • Lead Free: Yes
  • Package: SOP-8L

Technical Specifications

Parameter Symbol N-Channel Conditions P-Channel Conditions Value Unit
Drain-Source Voltage VDS 100 V
-100 V
Gate-Source Voltage VGS 20 V
20 V
Continuous Drain Current ID 2.5 A
-2.5 A
Pulsed Drain Current IDM 10 A
-10 A
Single Pulse Avalanche Energy EAS (VDD=50V,VGS=10V,L=0.5mH,RG=25) (VDD=-50V,VGS=-10V,L=0.5mH,RG=25) 3 mJ
12 mJ
Power Dissipation PD (Ta=25) (Ta=25) 1.8 W
Thermal Resistance Junction-to-Ambient RJA 62.5 /W
Storage Temperature Range TSTG -55 to 150
Operating Junction Temperature Range TJ -55 to 150
Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250uA VGS=0V, ID=-250uA 100 V
-100 V
Drain-Source Leakage Current IDSS VDS=80V, VGS=0V, TJ=25 VDS=-80V, VGS=0V, TJ=25 - uA
- uA
Gate-Source Leakage Current IGSS VGS=20V, VDS=0V VGS=20V, VDS=0V 100 nA
100 nA
Gate Threshold Voltage VGS(th) VGS=VDS, ID =250uA VGS=VDS, ID =-250uA 1.0 to 2.5 V
-1.0 to -2.5 V
Static Drain-Source On-Resistance RDS(ON) VGS=10V, ID=2A VGS=-10V, ID=-2A 160 to 210 m
230 to 300 m
VGS=4.5V, ID=1.5A VGS=-4.5V, ID=-1A 230 to 300 m
240 to 320 m
Input Capacitance Ciss VDS=50V, VGS=0V, f=1MHz VDS=-50V, VGS=0V, f=1MHz 498 pF
721 pF
Output Capacitance Coss 30 pF
Reverse Transfer Capacitance Crss 19 pF
18 pF
Total Gate Charge Qg VDS=50V, VGS=10V, ID=2A VDS=-50V, VGS=-10V, ID=-2A 13.6 nC
16 nC
Gate-Source Charge Qgs 2.1 nC
3 nC
Gate-Drain Charge Qg d 1.9 nC
2.5 nC
Turn-On Delay Time Td(on) VDD=50V, VGS=10V, RG=3, ID=2A VDD=-50V, VGS=-10V, RG=3, ID=-2A 7 nS
9 nS
Rise Time Tr 1.5 nS
6.5 nS
Turn-Off Delay Time Td(off) 15.3 nS
28 nS
Fall Time Tf 2 nS
7.5 nS
Diode Forward Voltage VSD VGS=0V, IS=1A, TJ=25 VGS=0V, IS=-1A, TJ=25 - V
- V
Maximum Body-Diode Continuous Current IS 2.5 A
-2.5 A
Reverse Recovery Time Trr IS=2.5A, di/dt=100A/us, TJ=25 IS=-2.5A, di/dt=-100A/us, Tj=25 38 nS
35 nS
Reverse Recovery Charge Qrr 27 nC
45 nC

Package Information (SOP-8L)

Symbol Dimensions (mm)
A 1.35 - 1.75
A1 0.10 - 0.25
A2 1.35 - 1.55
b 0.33 - 0.51
c 0.17 - 0.25
D 4.80 - 5.00
e 1.27 REF.
E 5.80 - 6.20
E1 3.80 - 4.00
L 0.40 - 1.27
0 - 8

Order Information

Device Package Unit/Tape
SP1022CP8 SOP-8L 4000

Marking

Device Code: 1022C

Week Code: * (Indicated by an asterisk)


2504101957_Siliup-SP1022CP8_C22385409.pdf

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