100V N Channel MOSFET Siliup SP010N08GTH with Fast Switching Speeds and Low Drain Source Resistance
Key Attributes
Model Number:
SP010N08GTH
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
65A
RDS(on):
8.5mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.9V@250uA
Reverse Transfer Capacitance (Crss@Vds):
22pF
Number:
1 N-channel
Output Capacitance(Coss):
339pF
Input Capacitance(Ciss):
1.635nF
Pd - Power Dissipation:
95W
Gate Charge(Qg):
14nC@10V
Mfr. Part #:
SP010N08GTH
Package:
TO-252
Product Description
Product Overview
The SP010N08GTH is a 100V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. Engineered with advanced split gate trench technology, this MOSFET offers fast switching speeds, low gate charge, and low RDS(on). It is designed for power switching applications, battery management systems, and uninterruptible power supplies. The device is available in a TO-252 package and has undergone 100% single pulse avalanche energy testing.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP010N08GTH
- Package: TO-252
- Technology: Advanced Split Gate Trench Technology
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 100 | V | |||
| Drain-Source ON Resistance | RDS(on) | 10V | 8.5 | m | ||
| Drain-Source ON Resistance | RDS(on) | 4.5V | 11 | m | ||
| Continuous Drain Current | ID | 65 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25 unless otherwise noted) | 100 | V | ||
| Gate-Source Voltage | VGS | (Ta=25 unless otherwise noted) | 20 | V | ||
| Continuous Drain Current | ID | (Tc=25) | 65 | A | ||
| Continuous Drain Current | ID | (Tc=100) | 45 | A | ||
| Pulsed Drain Current | IDM | 260 | A | |||
| Single Pulse Avalanche Energy | EAS | 156 | mJ | |||
| Power Dissipation | PD | (Tc=25) | 95 | W | ||
| Thermal Resistance Junction-to-Case | RJC | 1.32 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | ID = 250A, VGS = 0V | 100 | - | - | V |
| Drain Cut-Off Current | IDSS | VDS = 80V, VGS = 0V | - | - | 1 | uA |
| Gate Leakage Current | IGSS | VGS = 20V, VDS = 0V | - | - | 0.1 | nA |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250A | 1.2 | 1.9 | 2.5 | V |
| Drain-Source ON Resistance | RDS(ON) | VGS = 10V, ID = 20A | - | 8.5 | 12 | m |
| Drain-Source ON Resistance | RDS(ON) | VGS = 4.5V, ID = 15A | - | 11 | 15 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS =50V, VGS = 0V, f = 1.0MHz | - | 1635 | - | pF |
| Output Capacitance | Coss | - | 339 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 22 | - | pF | |
| Total Gate Charge | Qg | VDS=50V , VGS=10V , ID=50A | - | 14 | - | nC |
| Gate-Source Charge | Qgs | - | 5 | - | nC | |
| Gate-Drain Charge | Qg | - | 7 | - | nC | |
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VGS = 10V, VDS =50V, ID=50A RG = 4.7 | - | 8 | - | nS |
| Rise Time | tr | - | 16 | - | nS | |
| Turn-Off Delay Time | td(off) | - | 31 | - | nS | |
| Fall Time | tf | - | 27 | - | nS | |
| Drain-Source Body Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 65 | A | |
| Reverse Recovery Time | Trr | IS=20A, di/dt=100A/us, TJ=25 | - | 49 | - | nS |
| Reverse Recovery Charge | Qrr | - | 78 | - | nC | |
Order Information
| Device | Package | Unit/Tube | Marking |
|---|---|---|---|
| SP010N08GTH | TO-252 | 2500 | 010N08G : Product code **: Week code |
Package Information (TO-252)
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
|---|---|---|---|---|
| Min | Max | Min | Max | |
| A | 2.200 | 2.400 | 0.087 | 0.094 |
| A1 | 0.000 | 0.127 | 0.000 | 0.005 |
| b | 0.660 | 0.860 | 0.026 | 0.034 |
| c | 0.460 | 0.580 | 0.018 | 0.023 |
| D | 6.500 | 6.700 | 0.256 | 0.264 |
| D1 | 5.100 | 5.460 | 0.201 | 0.215 |
| D2 | 4.830 REF. | 0.190 REF. | ||
| E | 6.000 | 6.200 | 0.236 | 0.244 |
| e | 2.186 | 2.386 | 0.086 | 0.094 |
| L | 9.800 | 10.400 | 0.386 | 0.409 |
| L1 | 2.900 REF. | 0.114 REF. | ||
| L2 | 1.400 | 1.700 | 0.055 | 0.067 |
| L3 | 1.600 REF. | 0.063 REF. | ||
| L4 | 0.600 | 1.000 | 0.024 | 0.039 |
| 1.100 | 1.300 | 0.043 | 0.051 | |
| 0 | 8 | 0 | 8 | |
| h | 0.000 | 0.300 | 0.000 | 0.012 |
| V | 5.350 REF. | 0.211 REF. | ||
2504101957_Siliup-SP010N08GTH_C22466799.pdf
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