Surface mount 20V N Channel MOSFET Siliup SP2312T2J suitable for battery switches and power management
Key Attributes
Model Number:
SP2312T2J
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
20mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
900mV@250uA
Reverse Transfer Capacitance (Crss@Vds):
55pF@10V
Number:
1 N-channel
Output Capacitance(Coss):
105pF
Input Capacitance(Ciss):
865pF@10V
Pd - Power Dissipation:
1.5W
Mfr. Part #:
SP2312T2J
Package:
SOT-23
Product Description
Product Overview
The SP2312T2J is a 20V N-Channel MOSFET designed for high power and current handling capabilities. It is suitable for surface mount applications and finds use in battery switches, DC/DC converters, and as a load switch for portable devices. This MOSFET offers a low on-resistance at various gate-source voltages, contributing to efficient power management.
Product Attributes
- Brand: Shanghai Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP2312T2J
- Channel Type: N-Channel
- Voltage Rating: 20V
- Package: SOT-23
- Device Code: S12
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | 20 | V | ||||
| RDS(on) | @4.5V | 13 | m | |||
| RDS(on) | @2.5V | 16 | m | |||
| ID | 5.0 | A | ||||
| Absolute Maximum Ratings (Ta=25 unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | 20 | V | |||
| Gate-Source Voltage | VGS | 10 | V | |||
| Continuous Drain Current | ID | 5 | A | |||
| Pulsed Drain Current (t=300s) | IDM | 20 | A | |||
| Power Dissipation | PD | 1.5 | W | |||
| Thermal Resistance from Junction to Ambient | RJA | 80 | /W | |||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature | TSTG | -55 | +150 | |||
| Electrical Characteristics (TA=25 oC, unless otherwise noted) | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250A | 20 | 21.5 | V | |
| Zero gate voltage drain current | IDSS | VDS =20V,VGS = 0V | 1 | A | ||
| Gate-body leakage current | IGSS | VGS =10V, VDS = 0V | 100 | nA | ||
| Gate threshold voltage | VGS(th) | VDS =VGS, ID =250A | 0.5 | 0.65 | 0.9 | V |
| Drain-source on-resistance | RDS(on) | VGS =4.5V, ID =5.0A | 13 | 20 | m | |
| Drain-source on-resistance | RDS(on) | VGS =2.5V, ID =4.7A | 16 | 30 | m | |
| Drain-source on-resistance | RDS(on) | VGS =1.8V, ID =4.3A | 40 | m | ||
| Forward transconductance | gFS | VDS =10V, ID =5A | 6 | S | ||
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS =10V,VGS =0V,f=1MHz | 865 | pF | ||
| Output Capacitance | Coss | 105 | pF | |||
| Reverse Transfer Capacitance | Crss | 55 | pF | |||
| Gate resistance | Rg | f =1MHz | 0.5 | 4.8 | ||
| Switching Characteristics | ||||||
| Turn-on delay time | td(on) | VGEN=5V,VDD=10V, ID =4A,RG=1, RL=2.2 | 10 | ns | ||
| Turn-on rise time | tr | 20 | ns | |||
| Turn-off delay time | td(off) | 32 | ns | |||
| Turn-off fall time | tf | 12 | ns | |||
| Source-Drain Diode Characteristics | ||||||
| Diode Forward voltage | VSD | VGS =0V, IS=4A | 0.75 | 1.2 | V | |
| SOT-23 Package Information | ||||||
| Symbol | Dimensions In Millimeters | Min. | Max. | |||
| A | 0.90 | 1.15 | ||||
| A1 | 0.00 | 0.10 | ||||
| A2 | 0.90 | 1.05 | ||||
| b | 0.30 | 0.50 | ||||
| c | 0.08 | 0.15 | ||||
| D | 2.80 | 3.00 | ||||
| E | 1.20 | 1.40 | ||||
| E1 | 2.25 | 2.55 | ||||
| e | REF. | 0.95 | ||||
| e1 | 1.80 | 2.00 | ||||
| L | REF. | 0.55 | ||||
| L1 | 0.30 | 0.50 | ||||
| 0o | 8o | |||||
2411212332_Siliup-SP2312T2J_C41355159.pdf
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