Durable Siliup SP30N03ANK 30V N Channel MOSFET designed for DC DC converters and power management

Key Attributes
Model Number: SP30N03ANK
Product Custom Attributes
Drain To Source Voltage:
30V
Configuration:
-
Current - Continuous Drain(Id):
100A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.8mΩ@10V;4mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
289pF
Number:
1 N-channel
Output Capacitance(Coss):
369pF
Pd - Power Dissipation:
48W
Input Capacitance(Ciss):
3.068nF
Gate Charge(Qg):
44nC@10V
Mfr. Part #:
SP30N03ANK
Package:
PDFNWB-8L(5x6)
Product Description

Product Overview

The SP30N03ANK is a 30V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for efficient power management, this MOSFET features fast switching speeds and a low on-resistance, making it suitable for demanding applications. It is ROHS Compliant & Halogen-Free and has undergone 100% Single Pulse avalanche energy testing. Key applications include DC-DC converters and motor control.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Model: SP30N03ANK
  • Channel Type: N-Channel
  • Voltage Rating: 30V
  • Package: PDFN5X6-8L
  • Certifications: ROHS Compliant & Halogen-Free
  • Testing: 100% Single Pulse avalanche energy Test
  • Marking: 30N03A

Technical Specifications

Parameter Symbol Conditions Min. Typ. Max. Unit
Product Summary
V(BR)DSS V(BR)DSS 30 V
RDS(on)TYP RDS(on) @10V 2.8 m
RDS(on)TYP RDS(on) @4.5V 4 m
ID ID 100 A
Absolute Maximum Ratings
Drain-Source Voltage VDSS (Ta=25,unless otherwise noted) 30 V
Gate-Source Voltage VGSS (Ta=25,unless otherwise noted) 20 V
Continuous Drain Current ID (Tc=25C) 100 A
Continuous Drain Current ID (Tc=100C) 67 A
Pulse Drain Current Tested IDM 400 A
Single pulsed avalanche energy EAS 180 mJ
Power Dissipation PD (Tc=25C) 48 W
Thermal Resistance Junction-to-Case RJC 2.6 C/W
Storage Temperature Range TSTG -55 150 C
Operating Junction Temperature Range TJ -55 150 C
Electrical Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V , ID=250uA 30 - - V
Drain-Source Leakage Current IDSS VDS=24V , VGS=0V , TJ=25 - - 1 uA
Gate-Source Leakage Current IGSS VGS=20V , VDS=0V - - 100 nA
Gate Threshold Voltage VGS(th) VGS=VDS , ID =250uA 1.0 1.5 2.5 V
Static Drain-Source On-Resistance RDS(ON) VGS =10V, ID =20A - 2.8 3.5 m
Static Drain-Source On-Resistance RDS(ON) VGS =4.5V, ID =15A - 4 6 m
Dynamic Characteristics
Input Capacitance Ciss VDS=15V , VGS=0V , f=1MHz - 3068 - pF
Output Capacitance Coss - 369 -
Reverse Transfer Capacitance Crss - 289 -
Total Gate Charge Qg VDS=15V , VGS=10V , ID=20A - 44 - nC
Gate-Source Charge Qgs - 7 -
Gate-Drain Charge Qg - 8 -
Switching Characteristics
Turn-On Delay Time Td(on) VDD=15V VGS=10V , RG=3, ID=30A - 10 - nS
Rise Time Tr - 29 -
Turn-Off Delay Time Td(off) - 46 -
Fall Time Tf - 17 -
Diode Characteristics
Diode Forward Voltage VSD VGS=0V , IS=1A , TJ=25 - - 1.2 V
Maximum Body-Diode Continuous Current IS - - 90 A
Reverse recover time Trr IS=30A, di/dt=100A/us, Tj=25 - 17 - nS
Reverse recovery charge Qrr - 7 - nC
Package Information
Package Type PDFN5X6-8L
Dimensions (mm) A 0.900 - 1.000
Dimensions (mm) A3 0.254REF.
Dimensions (mm) D 4.944 - 5.096
Dimensions (mm) E 5.974 - 6.126
Dimensions (mm) D1 3.910 - 4.110
Dimensions (mm) E1 3.375 - 3.575
Dimensions (mm) D2 4.824 - 4.976
Dimensions (mm) E2 5.674 - 5.826
Dimensions (mm) k 1.190 - 1.390
Dimensions (mm) b 0.350 - 0.450
Dimensions (mm) e 1.270TYP.
Dimensions (mm) L 0.559 - 0.711
Dimensions (mm) L1 0.424 - 0.576
Dimensions (mm) H 0.574 - 0.726
Dimensions (mm) 10 - 12

2504101957_Siliup-SP30N03ANK_C41354857.pdf

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