Durable Siliup SP30N03ANK 30V N Channel MOSFET designed for DC DC converters and power management
Product Overview
The SP30N03ANK is a 30V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for efficient power management, this MOSFET features fast switching speeds and a low on-resistance, making it suitable for demanding applications. It is ROHS Compliant & Halogen-Free and has undergone 100% Single Pulse avalanche energy testing. Key applications include DC-DC converters and motor control.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Model: SP30N03ANK
- Channel Type: N-Channel
- Voltage Rating: 30V
- Package: PDFN5X6-8L
- Certifications: ROHS Compliant & Halogen-Free
- Testing: 100% Single Pulse avalanche energy Test
- Marking: 30N03A
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | V(BR)DSS | 30 | V | |||
| RDS(on)TYP | RDS(on) | @10V | 2.8 | m | ||
| RDS(on)TYP | RDS(on) | @4.5V | 4 | m | ||
| ID | ID | 100 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | (Ta=25,unless otherwise noted) | 30 | V | ||
| Gate-Source Voltage | VGSS | (Ta=25,unless otherwise noted) | 20 | V | ||
| Continuous Drain Current | ID | (Tc=25C) | 100 | A | ||
| Continuous Drain Current | ID | (Tc=100C) | 67 | A | ||
| Pulse Drain Current Tested | IDM | 400 | A | |||
| Single pulsed avalanche energy | EAS | 180 | mJ | |||
| Power Dissipation | PD | (Tc=25C) | 48 | W | ||
| Thermal Resistance Junction-to-Case | RJC | 2.6 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 30 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=24V , VGS=0V , TJ=25 | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 1.0 | 1.5 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V, ID =20A | - | 2.8 | 3.5 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =4.5V, ID =15A | - | 4 | 6 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=15V , VGS=0V , f=1MHz | - | 3068 | - | pF |
| Output Capacitance | Coss | - | 369 | - | ||
| Reverse Transfer Capacitance | Crss | - | 289 | - | ||
| Total Gate Charge | Qg | VDS=15V , VGS=10V , ID=20A | - | 44 | - | nC |
| Gate-Source Charge | Qgs | - | 7 | - | ||
| Gate-Drain Charge | Qg | - | 8 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | Td(on) | VDD=15V VGS=10V , RG=3, ID=30A | - | 10 | - | nS |
| Rise Time | Tr | - | 29 | - | ||
| Turn-Off Delay Time | Td(off) | - | 46 | - | ||
| Fall Time | Tf | - | 17 | - | ||
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 90 | A | |
| Reverse recover time | Trr | IS=30A, di/dt=100A/us, Tj=25 | - | 17 | - | nS |
| Reverse recovery charge | Qrr | - | 7 | - | nC | |
| Package Information | ||||||
| Package Type | PDFN5X6-8L | |||||
| Dimensions (mm) | A | 0.900 - 1.000 | ||||
| Dimensions (mm) | A3 | 0.254REF. | ||||
| Dimensions (mm) | D | 4.944 - 5.096 | ||||
| Dimensions (mm) | E | 5.974 - 6.126 | ||||
| Dimensions (mm) | D1 | 3.910 - 4.110 | ||||
| Dimensions (mm) | E1 | 3.375 - 3.575 | ||||
| Dimensions (mm) | D2 | 4.824 - 4.976 | ||||
| Dimensions (mm) | E2 | 5.674 - 5.826 | ||||
| Dimensions (mm) | k | 1.190 - 1.390 | ||||
| Dimensions (mm) | b | 0.350 - 0.450 | ||||
| Dimensions (mm) | e | 1.270TYP. | ||||
| Dimensions (mm) | L | 0.559 - 0.711 | ||||
| Dimensions (mm) | L1 | 0.424 - 0.576 | ||||
| Dimensions (mm) | H | 0.574 - 0.726 | ||||
| Dimensions (mm) | 10 - 12 | |||||
2504101957_Siliup-SP30N03ANK_C41354857.pdf
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