Siliup SP20MF65TQ 650V Super Junction MOSFET Featuring Low Gate Charge and Fast Switching for PWM Circuits
Key Attributes
Model Number:
SP20MF65TQ
Product Custom Attributes
Drain To Source Voltage:
650V
Configuration:
-
Current - Continuous Drain(Id):
20A
Operating Temperature -:
-55℃~+150℃
RDS(on):
205mΩ@10V
Gate Threshold Voltage (Vgs(th)):
5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
2.5pF
Number:
1 N-channel
Output Capacitance(Coss):
102pF
Pd - Power Dissipation:
34W
Input Capacitance(Ciss):
1.745nF
Gate Charge(Qg):
45.5nC@10V
Mfr. Part #:
SP20MF65TQ
Package:
TO-220-3L
Product Description
Product Overview
The SP20MF65TQ is a 650V Super-Junction MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), making it suitable for PWM applications, hard-switched and high-frequency circuits, and power management. This device is 100% tested for single pulse avalanche energy.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Device Code: 20MF65
- Package: TO-220-3L
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Breakdown Voltage | V(BR)DSS | 650 | V | |||
| On-Resistance | RDS(on)TYP | @10V | 175 | m | ||
| Continuous Drain Current | ID | 20 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25, unless otherwise noted) | 650 | V | ||
| Gate-Source Voltage | VGS | (Ta=25, unless otherwise noted) | 30 | V | ||
| Continuous Drain Current | ID | (Tc=25) | 20 | A | ||
| Continuous Drain Current | ID | (Tc=100) | 12.5 | A | ||
| Pulsed Drain Current | IDM | 80 | A | |||
| Single Pulse Avalanche Energy | EAS | 1 | 485 | mJ | ||
| Power Dissipation | PD | (Tc=25) | 34 | W | ||
| Thermal Resistance Junction-to-Case | RJC | 3.68 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | ID = 250A, VGS = 0V | 650 | V | ||
| Drain-Source Leakage Current | IDSS | VDS = 520V, VGS = 0V | 1 | uA | ||
| Gate-Source Leakage Current | IGSS | VGS = 30V, VDS = 0V | 0.1 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250A | 3 | 4 | 5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS = 10V, ID = 10A | 175 | 205 | m | |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=50V , VGS=0V , f=1MHz | 1745 | pF | ||
| Output Capacitance | Coss | 102 | pF | |||
| Reverse Transfer Capacitance | Crss | 2.5 | pF | |||
| Total Gate Charge | Qg | VDS=400V , VGS=0-10V , ID=10A | 45.5 | nC | ||
| Gate-Source Charge | Qgs | 10.5 | nC | |||
| Gate-Drain Charge | Qgd | 9 | nC | |||
| Switching Characteristics | ||||||
| Turn-On Delay Time | Td(on) | VDD=400V, VGS=10V , RG=2, ID=10A | 31 | nS | ||
| Rise Time | Tr | 20 | nS | |||
| Turn-Off Delay Time | Td(off) | 83 | nS | |||
| Fall Time | Tf | 9 | nS | |||
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | 1.2 | V | ||
| Maximum Body-Diode Continuous Current | IS | 20 | A | |||
| Reverse recover time | Trr | IS=10A, di/dt=100A/us, Tj=25 | 170 | nS | ||
| Reverse recovery charge | Qrr | 5.8 | uC | |||
| Package Information (TO-220-3L) | ||||||
| Symbol | Dimensions In Millimeters | Dimensions In Inches | Min. | Max. | Min. | Max. |
| A | 4.400 - 4.600 | 0.173 - 0.181 | ||||
| A1 | 2.250 - 2.550 | 0.089 - 0.100 | ||||
| b | 0.710 - 0.910 | 0.028 - 0.036 | ||||
| b1 | 1.170 - 1.370 | 0.046 - 0.054 | ||||
| c | 0.330 - 0.650 | 0.013 - 0.026 | ||||
| c1 | 1.200 - 1.400 | 0.047 - 0.055 | ||||
| D | 9.910 - 10.250 | 0.390 - 0.404 | ||||
| E | 8.950 - 9.750 | 0.352 - 0.384 | ||||
| E1 | 12.650 - 13.050 | 0.498 - 0.514 | ||||
| e | 2.540 TYP. | 0.100 TYP. | ||||
| e1 | 4.980 - 5.180 | 0.196 - 0.204 | ||||
| F | 2.650 - 2.950 | 0.104 - 0.116 | ||||
| H | 7.900 - 8.100 | 0.311 - 0.319 | ||||
| h | 0.000 - 0.300 | 0.000 - 0.012 | ||||
| L | 12.900 - 13.400 | 0.508 - 0.528 | ||||
| L1 | 2.850 - 3.250 | 0.112 - 0.128 | ||||
| V | 6.900 REF. | 0.276 REF. | ||||
| 3.400 - 3.800 | 0.134 - 0.150 | |||||
2412041501_Siliup-SP20MF65TQ_C42404753.pdf
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