power conversion device Siliup SP30N06LTH N Channel MOSFET with low RDS on and 60 amp drain current rating

Key Attributes
Model Number: SP30N06LTH
Product Custom Attributes
Drain To Source Voltage:
30V
Configuration:
-
Current - Continuous Drain(Id):
60A
Operating Temperature -:
-55℃~+150℃
RDS(on):
11.5mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
160pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
1.321nF@15V
Pd - Power Dissipation:
90W
Gate Charge(Qg):
2.3nC@10V
Mfr. Part #:
SP30N06LTH
Package:
TO-252
Product Description

Product Overview

The SP30N06LTH is a 30V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for efficient power management. It features fast switching, low gate charge, and low RDS(on), making it ideal for high-frequency switching applications. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for DC-DC converters and synchronous rectification.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Product Code: SP30N06LTH
  • Channel Type: N-Channel
  • Package Type: TO-252
  • Device Code: 30N06

Technical Specifications

Parameter Symbol Conditions Min. Typ. Max. Unit
Product Summary
V(BR)DSS V(BR)DSS 30 V
RDS(on)TYP RDS(on) @10V 6.3 7.8 m
RDS(on)TYP RDS(on) @4.5V 8.5 11.5 m
ID ID 60 A
Absolute Maximum Ratings
Drain-Source Voltage VDS (Ta=25,unless otherwise noted) 30 V
Gate-Source Voltage VGS 20 V
Continuous Drain Current ID (TC=25) 60 A
Continuous Drain Current ID (TC=100) 40 A
Pulsed Drain Current IDM 240 A
Single Pulse Avalanche Energy EAS 68 mJ
Power Dissipation PD (TC=25) 90 W
Thermal Resistance Junction-to-Case RJC 1.4 /W
Storage Temperature Range TSTG -55 150
Operating Junction Temperature Range TJ -55 150
Electrical Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V , ID=250uA 30 - - V
Drain-Source Leakage Current IDSS VDS=24V , VGS=0V , TJ=25 - - 1 uA
Gate-Source Leakage Current IGSS VGS=20V , VDS=0V - - 100 nA
Gate Threshold Voltage VGS(th) VGS=VDS , ID =250uA 1.0 1.7 2.5 V
Static Drain-Source On-Resistance RDS(ON) VGS=10V , ID=20A - 6.3 7.8 m
Static Drain-Source On-Resistance RDS(ON) VGS=4.5V , ID=15A - 8.5 11.5 m
Input Capacitance Ciss VDS=15V , VGS=0V , f=1MHz - 1321 - pF
Output Capacitance Coss - 180 - pF
Reverse Transfer Capacitance Crss - 160 - pF
Total Gate Charge Qg VDS=10V , VGS=10V , ID=25A - 2.3 - nC
Gate-Source Charge Qgs - 7 - nC
Gate-Drain Charge Qgd - 4.5 - nC
Turn-On Delay Time Td(on) VDD=15V, VGS=10V , RG=3, ID=20A - 4.5 - nS
Rise Time Tr - 17.6 - nS
Turn-Off Delay Time Td(off) - 16.7 - nS
Fall Time Tf - 58.6 - nS
Diode Forward Voltage VSD VGS=0V , IS=1A , TJ=25 - - 1.2 V
Maximum Body-Diode Continuous Current IS - - 60 A
Reverse Recovery Time Trr IS=20A, di/dt=100A/us, TJ=25 - 12 - nS
Reverse Recovery Charge Qrr - 4 - nC
TO-252 Package Information
Symbol Dimensions In Millimeters Dimensions In Inches
Min. Max. Min. Max.
A 2.200 2.400 0.087 0.094
A1 0.000 0.127 0.000 0.005
b 0.660 0.860 0.026 0.034
c 0.460 0.580 0.018 0.023
D 6.500 6.700 0.256 0.264
D1 5.100 5.460 0.201 0.215
D2 4.830 REF. 0.190 REF.
E 6.000 6.200 0.236 0.244
e 2.186 2.386 0.086 0.094
L 9.800 10.400 0.386 0.409
L1 2.900 REF. 0.114 REF.
L2 1.400 1.700 0.055 0.067
L3 1.600 REF. 0.063 REF.
L4 0.600 1.000 0.024 0.039
1.100 1.300 0.043 0.051
0 8 0 8
h 0.000 0.300 0.000 0.012
V 5.350 REF. 0.211 REF.

2410311049_Siliup-SP30N06LTH_C42372342.pdf

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