Silicon epitaxial NPN transistor Slkor BFP196 for in microwave VHF UHF and CATV broadband low noise amplifiers

Name: Silicon epitaxial NPN transistor Slkor BFP196 for in microwave VHF UHF and CATV broadband low noise amplifiers
Brand: Hefei Purple Horn E-Commerce Co., Ltd.
SKU: BFP196
Availability: InStock

Key Attributes

Model Number: BFP196

Product Custom Attributes

Emitter-Base Voltage(Vebo):

Current - Collector Cutoff:

100nA

Transition Frequency(fT):

9GHz

Number:

1 NPN

Type:

NPN

Pd - Power Dissipation:

700mW

Current - Collector(Ic):

150mA

Collector - Emitter Voltage VCEO:

12V

Operating Temperature:

Mfr. Part #:

BFP196

Package:

SOT-143B

Product Description

Product Overview

The BFP196 is a silicon epitaxial NPN transistor designed for microwave and high-frequency applications. It offers high power gain, wide bandwidth, low noise, and low leakage current, along with small junction capacitance and a large dynamic range for excellent current linearity. This transistor is ideal for use in ultra-high frequency microwave, VHF, UHF, and CATV high-frequency broadband low-noise amplifiers. Typical applications include satellite TV tuners, digital TV set-top boxes, CATV amplifiers, analog and digital cordless phones, radar detection probes, wireless security alarms, RF modules, and fiber optic modules.

Product Attributes

Brand: slkormicro
Model: BFP196
Transistor Type: NPN Silicon Epitaxial
Package Type: SOT143B
Marking: RIs-##

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Typical	Max	Unit
Absolute Maximum Ratings (Tamb=25)
Collector-Base Voltage	VCBO				20	V
Collector-Emitter Voltage	VCEO				12	V
Emitter-Base Voltage	VEBO				2.0	V
Collector Current	ICM				150	mA
Power Dissipation	PT				700	mW
Junction Temperature	TJ				150
Storage Temperature	Tstg		-65		+150
Electrical Characteristics (Tamb=25)
Collector-Base Breakdown Voltage	BVCBO		20	-	-	V
Collector-Emitter Breakdown Voltage	BVCEO		12	-	-	V
Collector Cutoff Current	ICBO	VCB=10V, IE=0	-	-	0.1	A
DC Current Gain	hFE	VCE=8V, IC=50mA VCE=6V, IC=30mA	75 100	110 140	-
Characteristic Frequency	fT	VCE=8V, IC=70mA, f=500MHz	8.5	9.0	-	GHz
Collector-Emitter Capacitance	Cce	IC=iC=0, VCE=10V, f=1MHz	-	0.35	-	pF
Collector-Base Capacitance	Ccb	IE=ie=0, VCB=10V, f=1MHz	-	0.8	1.3	pF
Emitter-Base Capacitance	Ceb	IC=iC=0, VEB=0.5V, f=1MHz	-	3.9	-	pF
Insertion Power Gain	\|S21\|	IC=50mA, VCE=8V, f=900MHz IC=50mA, VCE=8V, f=1.8GHz	13 6.5	14 7.5	-	dB
Noise Figure	NF	VCE=8V, IC=20mA, f=900MHz VCE=8V, IC=20mA, f=1.8GHz	-	1.3 2.2	-	dB
Maximum Unilateral Power Gain	GUM	IC=50mA, VCE=8V, f=900MHz IC=50mA, VCE=8V, f=1.8GHz	16 -	17 10	-	dB
Output Power at 1dB Gain Compression	PL1	IC=50mA, VCE=8V, RL=50, f=900MHz	-	20	-	dBm
Third Order Intercept Point	ITO	IC=50mA, VCE=8V, RL=50, fp=900MHz, fq=902MHz	-	33	-	dBm

Package Dimensions

SOT143B Package Dimensions (Units:mm)

Dimension	Value (mm)
Length	2.9 0.05
Width	1.7 0.05
Height	1.9 0.05
Lead Pitch (Typical)	1.0 TYP.
Lead Width (Typical)	0.42 0.06
Lead Length (Typical)	0.4 0.1
Body Thickness (Typical)	0.1 TYP.
Base Width (Typical)	0.83 0.05
Overall Width (Typical)	1.3 0.1

Pin Connections (SOT143B)

Top View:

Pin 1: Collector
Pin 2 & 4: Emitter
Pin 3: Base

2401051153_Slkor-BFP196_C19188357.pdf

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