High Frequency Power Switching MOSFET Siliup SP4406P8 30V N Channel with Low RDSon and Fast Response

Key Attributes
Model Number: SP4406P8
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
10A
RDS(on):
9.5mΩ@10V;12mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.7V@250uA
Reverse Transfer Capacitance (Crss@Vds):
160pF
Number:
1 N-channel
Output Capacitance(Coss):
180pF
Input Capacitance(Ciss):
1.321nF
Pd - Power Dissipation:
3W
Gate Charge(Qg):
2.3nC@10V
Mfr. Part #:
SP4406P8
Package:
SOP-8L
Product Description

Product Overview

The SP4406P8 is a 30V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It offers fast switching, low gate charge, and low RDS(on), with typical RDS(on) values of 9.5m at 10V and 12m at 4.5V. This device is designed for power switching applications, including hard switched and high-frequency circuits, as well as uninterruptible power supplies. It features 100% single pulse avalanche energy testing.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Product Type: N-Channel MOSFET
  • Package: SOP-8L
  • Device Code: 44N06

Technical Specifications

Parameter Symbol Conditions Min. Typ. Max. Unit
Product Summary
V(BR)DSS V(BR)DSS 30 V
RDS(on) TYP RDS(on) @10V 9.5 m
RDS(on) TYP RDS(on) @4.5V 12 m
ID ID 10 A
Absolute Maximum Ratings
Drain-Source Voltage VDS (Ta=25, unless otherwise noted) 30 V
Gate-Source Voltage VGS (Ta=25, unless otherwise noted) 20 V
Continuous Drain Current ID (Ta=25, unless otherwise noted) 10 A
Pulsed Drain Current IDM (Ta=25, unless otherwise noted) 40 A
Single Pulse Avalanche Energy1 EAS (Ta=25, unless otherwise noted) 20 mJ
Power Dissipation PD (Ta=25, unless otherwise noted) 3 W
Thermal Resistance Junction-to-Ambient RJA (Ta=25, unless otherwise noted) 41.7 /W
Storage Temperature Range TSTG (Ta=25, unless otherwise noted) -55 150
Operating Junction Temperature Range TJ (Ta=25, unless otherwise noted) -55 150
Electrical Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V , ID=250uA 30 - - V
Drain-Source Leakage Current IDSS VDS=24V , VGS=0V - - 1 uA
Gate-Source Leakage Current IGSS VGS=20V , VDS=0V - - 100 nA
Gate Threshold Voltage VGS(th) VGS=VDS , ID =250uA 1.2 1.7 2.5 V
Static Drain-Source On-Resistance RDS(ON) VGS=10V , ID=12A - 9.5 11.5 m
Static Drain-Source On-Resistance RDS(ON) VGS=4.5V , ID=10A - 12 15.5 m
Dynamic Characteristics
Input Capacitance Ciss VDS=15V , VGS=0V , f=1MHz - 1321 - pF
Output Capacitance Coss VDS=15V , VGS=0V , f=1MHz - 180 - pF
Reverse Transfer Capacitance Crss VDS=15V , VGS=0V , f=1MHz - 160 - pF
Total Gate Charge Qg VDS=15V , VGS=10V , ID=25A - 2.3 - nC
Gate-Source Charge Qgs VDS=15V , VGS=10V , ID=25A - 7 -
Gate-Drain Charge Qgd VDS=15V , VGS=10V , ID=25A - 4.5 -
Switching Characteristics
Turn-On Delay Time Td(on) VDD=15V, VGS=10V , RG=3, ID=20A - 4.5 - nS
Rise Time Tr VDD=15V, VGS=10V , RG=3, ID=20A - 17.6 - nS
Turn-Off Delay Time Td(off) VDD=15V, VGS=10V , RG=3, ID=20A - 16.7 - nS
Fall Time Tf VDD=15V, VGS=10V , RG=3, ID=20A - 58.6 - nS
Diode Characteristics
Diode Forward Voltage VSD VGS=0V , IS=1A - - 1.2 V
Maximum Body-Diode Continuous Current IS - - 10 A
Reverse Recovery Time Trr IS=10A, di/dt=100A/us, TJ=25 - 27 - nS
Reverse Recovery Charge Qrr IS=10A, di/dt=100A/us, TJ=25 - 21 - nC
Package Information (SOP-8L)
Symbol Dimensions (mm) Min. Dimensions (mm) Max.
A 1.35 1.75
A1 0.10 0.25
A2 1.35 1.55
b 0.33 0.51
c 0.17 0.25
D 4.80 5.00
e 1.27 REF.
E 5.80 6.20
E1 3.80 4.00
L 0.40 1.27
0 8

2504101957_Siliup-SP4406P8_C41354874.pdf
Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.