power management device Siliup SP30N02BNJ 30V N Channel MOSFET with fast switching and low on resistance
Key Attributes
Model Number:
SP30N02BNJ
Product Custom Attributes
Pd - Power Dissipation:
28W
Drain To Source Voltage:
30V
Configuration:
-
Current - Continuous Drain(Id):
80A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.5mΩ@10V;4.5mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.7V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
388pF
Number:
1 N-channel
Output Capacitance(Coss):
456pF
Input Capacitance(Ciss):
3.55nF
Gate Charge(Qg):
75nC@10V
Mfr. Part #:
SP30N02BNJ
Package:
PDFN-8L(3x3)
Product Description
Product Overview
The SP30N02BNJ is a 30V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for efficient power management, it features fast switching speeds, low on-resistance (2.5m typ. at 10V VGS), and a continuous drain current of 80A. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for applications such as DC-DC converters and power management systems. It comes in a compact PDFN3X3-8L package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Type: N-Channel MOSFET
- Device Code: SP30N02BNJ
- Package: PDFN3X3-8L
- Origin: China (implied by website and company name)
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | V(BR)DSS | - | - | - | 30 | V |
| Static Drain-Source On-Resistance | RDS(on) | VGS=10V, ID=20A | - | 2.5 | 3.2 | m |
| Static Drain-Source On-Resistance | RDS(on) | VGS=4.5V, ID=15A | - | 4.5 | 6.0 | m |
| Continuous Drain Current | ID | (Tc=25C) | - | - | 80 | A |
| Pulse Drain Current | IDM | Tested | - | - | 320 | A |
| Single Pulse Avalanche Energy | EAS | - | - | - | 180 | mJ |
| Power Dissipation | PD | (Tc=25C) | - | - | 28 | W |
| Thermal Resistance Junction-to-Case | RJC | - | - | 4.4 | - | C/W |
| Storage Temperature Range | TSTG | - | -55 | - | 150 | C |
| Operating Junction Temperature Range | TJ | - | -55 | - | 150 | C |
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 30 | - | - | V |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 1.0 | 1.7 | 2.5 | V |
| Input Capacitance | Ciss | VDS=15V , VGS=0V , f=1MHz | - | 3550 | - | pF |
| Output Capacitance | Coss | - | - | 456 | - | pF |
| Reverse Transfer Capacitance | Crss | - | - | 388 | - | pF |
| Total Gate Charge | Qg | VDS=15V , VGS=10V , ID=20A | - | 75 | - | nC |
| Gate-Source Charge | Qgs | - | - | 12 | - | nC |
| Gate-Drain Charge | Qg | - | - | 18.3 | - | nC |
| Turn-On Delay Time | Td(on) | VDD=20V, VGS=10V , RG=3, ID=20A | - | 10 | - | nS |
| Rise Time | Tr | - | - | 20 | - | nS |
| Turn-Off Delay Time | Td(off) | - | - | 51 | - | nS |
| Fall Time | Tf | - | - | 21 | - | nS |
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | - | 80 | A |
| Reverse recover time | Trr | IS=20A, di/dt=100A/us, Tj=25 | - | 19 | - | nS |
| Reverse recovery charge | Qrr | - | - | 7 | - | nC |
Package Information (PDFN3X3-8L)
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
|---|---|---|---|---|
| Min. | Max. | Min. | Max. | |
| A | 0.650 | 0.850 | 0.026 | 0.033 |
| A1 | 0.152 REF. | 0.006 REF. | - | - |
| A2 | 0~0.05 | 0~0.002 | - | - |
| D | 2.900 | 3.100 | 0.114 | 0.122 |
| D1 | 2.300 | 2.600 | 0.091 | 0.102 |
| E | 2.900 | 3.100 | 0.114 | 0.122 |
| E1 | 3.150 | 3.450 | 0.124 | 0.136 |
| E2 | 1.535 | 1.935 | 0.060 | 0.076 |
| b | 0.200 | 0.400 | 0.008 | 0.016 |
| e | 0.550 | 0.750 | 0.022 | 0.030 |
| L | 0.300 | 0.500 | 0.012 | 0.020 |
| L1 | 0.180 | 0.480 | 0.007 | 0.019 |
| L2 | 0~0.100 | 0~0.004 | - | - |
| L3 | 0~0.100 | 0~0.004 | - | - |
| H | 0.315 | 0.515 | 0.012 | 0.020 |
| 9 | 13 | 9 | 13 |
2504101957_Siliup-SP30N02BNJ_C41354853.pdf
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