Power Switching MOSFET Siliup SP010N07AGTH 100V N Channel with Low Gate Charge and Avalanche Energy Tested
Key Attributes
Model Number:
SP010N07AGTH
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
80A
RDS(on):
6.7mΩ@10V;8.7mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.7V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
12pF
Number:
1 N-channel
Output Capacitance(Coss):
388pF
Pd - Power Dissipation:
100W
Input Capacitance(Ciss):
1.942nF
Gate Charge(Qg):
67nC@10V
Mfr. Part #:
SP010N07AGTH
Package:
TO-252
Product Description
Product Overview
The SP010N07AGTH is a 100V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), utilizing advanced split gate trench technology. This device is 100% tested for single pulse avalanche energy and is suitable for power switching applications, battery management, and uninterruptible power supplies. The product is available in a TO-252 package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP010N07AGTH
- Package: TO-252
- Technology: Advanced Split Gate Trench Technology
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Breakdown Voltage (Drain-Source) | V(BR)DSS | 100 | V | |||
| RDS(on) (Typ) | RDS(on) | 10V | 6.7 | 8.5 | m | |
| RDS(on) (Typ) | RDS(on) | 4.5V | 8.7 | 12 | m | |
| Continuous Drain Current | ID | Tc=25 | 80 | A | ||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 100 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | Tc=25 | 80 | A | ||
| Continuous Drain Current | ID | Tc=100 | 55 | A | ||
| Pulsed Drain Current | IDM | 320 | A | |||
| Single Pulse Avalanche Energy | EAS | 272 | mJ | |||
| Power Dissipation | PD | Tc=25 | 100 | W | ||
| Thermal Resistance (Junction-to-Case) | RJC | 1.25 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | ID = 250A, VGS = 0V | 100 | - | - | V |
| Drain Cut-Off Current | IDSS | VDS = 80V, VGS = 0V | - | - | 1 | uA |
| Gate Leakage Current | IGSS | VGS = 20V, VDS = 0V | - | - | 0.1 | nA |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250A | 1.0 | 1.7 | 2.5 | V |
| Drain-Source ON Resistance | RDS(ON) | VGS = 10V, ID = 30A | - | 6.7 | 8.5 | m |
| Drain-Source ON Resistance | RDS(ON) | VGS = 4.5V, ID = 25A | - | 8.7 | 12 | m |
| Input Capacitance | Ciss | VDS =50V, VGS = 0V, f = 1.0MHz | - | 1942 | - | pF |
| Output Capacitance | Coss | - | 388 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 12 | - | pF | |
| Total Gate Charge | Qg | VDS=50V , VGS=10V , ID=50A | - | 67 | - | nC |
| Gate-Source Charge | Qgs | - | 12 | - | nC | |
| Gate-Drain Charge | Qgd | - | 21 | - | nC | |
| Turn-On Delay Time | td(on) | VGS = 50V, VDS =50V, ID=50A RG = 4.7 | - | 12 | - | nS |
| Rise Time | tr | - | 11 | - | nS | |
| Turn-Off Delay Time | td(off) | - | 42 | - | nS | |
| Fall Time | tf | - | 6 | - | nS | |
| Drain-Source Body Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 80 | A | |
| Reverse Recovery Time | Trr | IS=20A, di/dt=100A/us, TJ=25 | - | 59 | - | nS |
| Reverse Recovery Charge | Qrr | - | 88 | - | nC | |
Note: 1. EAS test condition: VDD=50V, VGS=10V, L=0.5mH, RG=25
Order Information: Device: SP010N07AGTH, Package: TO-252, Unit/Tube: 2500. Marking: 010N07AG : Product code, *: Week code.
2504101957_Siliup-SP010N07AGTH_C22466792.pdf
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