SP010N13GTQ N Channel 100V Power MOSFET Featuring Split Gate Trench Technology for Battery Management
Key Attributes
Model Number:
SP010N13GTQ
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
55A
Operating Temperature -:
-55℃~+150℃
RDS(on):
13mΩ@10V;16mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.8V@250uA
Reverse Transfer Capacitance (Crss@Vds):
17pF
Number:
1 N-channel
Output Capacitance(Coss):
379pF
Input Capacitance(Ciss):
1.225nF
Pd - Power Dissipation:
87W
Gate Charge(Qg):
14nC@10V
Mfr. Part #:
SP010N13GTQ
Package:
TO-220-3L
Product Description
Product Overview
The SP010N13GTQ is a 100V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for power switching applications. It features advanced Split Gate Trench Technology, offering fast switching, low gate charge, and low RDS(on). This MOSFET is suitable for battery management and uninterruptible power supply systems. It has undergone 100% single pulse avalanche energy testing.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP010N13GTQ
- Technology: Advanced Split Gate Trench Technology
- Channel Type: N-Channel
- Package: TO-220-3L
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | V(BR)DSS | 100 | V | |||
| On-Resistance (Typical) | RDS(on)TYP | @10V | 13 | m | ||
| On-Resistance (Typical) | RDS(on)TYP | @4.5V | 16 | m | ||
| Continuous Drain Current | ID | (Tc=25) | 55 | A | ||
| Drain-Source Voltage | VDS | (Ta=25 unless otherwise noted) | 100 | V | ||
| Gate-Source Voltage | VGS | (Ta=25 unless otherwise noted) | 20 | V | ||
| Continuous Drain Current | ID | (Tc=25) | 55 | A | ||
| Continuous Drain Current | ID | (Tc=100) | 37 | A | ||
| Pulsed Drain Current | IDM | 220 | A | |||
| Single Pulse Avalanche Energy | EAS | 144 | mJ | |||
| Power Dissipation | PD | (Tc=25) | 87 | W | ||
| Thermal Resistance Junction-to-Case | RJC | 1.44 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Drain-Source Breakdown Voltage | BVDSS | ID = 250A, VGS = 0V | 100 | - | - | V |
| Drain Cut-Off Current | IDSS | VDS = 80V, VGS = 0V | - | - | 1 | uA |
| Gate Leakage Current | IGSS | VGS = 20V, VDS = 0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250A | 1.0 | 1.8 | 2.5 | V |
| Drain-Source ON Resistance | RDS(ON) | VGS = 10V, ID = 20A | - | 13 | 17 | m |
| Drain-Source ON Resistance | RDS(ON) | VGS = 4.5V, ID = 10A | - | 16 | 21 | m |
| Input Capacitance | Ciss | VDS =50V, VGS = 0V, f = 1.0MHz | - | 1225 | - | pF |
| Output Capacitance | Coss | VDS =50V, VGS = 0V, f = 1.0MHz | - | 379 | - | pF |
| Reverse Transfer Capacitance | Crss | VDS =50V, VGS = 0V, f = 1.0MHz | - | 17 | - | pF |
| Total Gate Charge | Qg | VDS=50V , VGS=10V , ID=20A | - | 14 | - | nC |
| Gate-Source Charge | Qgs | VDS=50V , VGS=10V , ID=20A | - | 5 | - | nC |
| Gate-Drain Charge | Qgd | VDS=50V , VGS=10V , ID=20A | - | 2.7 | - | nC |
| Turn-On Delay Time | td(on) | VGS = 10V, VDS =50V, ID=20A RG = 2.2 | - | 38 | - | nS |
| Rise Time | tr | VGS = 10V, VDS =50V, ID=20A RG = 2.2 | - | 12 | - | nS |
| Turn-Off Delay Time | td(off) | VGS = 10V, VDS =50V, ID=20A RG = 2.2 | - | 51 | - | nS |
| Fall Time | tf | VGS = 10V, VDS =50V, ID=20A RG = 2.2 | - | 17 | - | nS |
| Source-Drain Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 55 | A | |
| Reverse Recovery Time | Trr | IS=20A, di/dt=100A/us, TJ=25 | - | 40 | - | nS |
| Reverse Recovery Charge | Qrr | IS=20A, di/dt=100A/us, TJ=25 | - | 42 | - | nC |
Package Information (TO-220-3L)
| Symbol | Dimensions In Millimeters (Min-Max) | Dimensions In Inches (Min-Max) |
|---|---|---|
| A | 4.400 - 4.600 | 0.173 - 0.181 |
| A1 | 2.250 - 2.550 | 0.089 - 0.100 |
| b | 0.710 - 0.910 | 0.028 - 0.036 |
| b1 | 1.170 - 1.370 | 0.046 - 0.054 |
| c | 0.330 - 0.650 | 0.013 - 0.026 |
| c1 | 1.200 - 1.400 | 0.047 - 0.055 |
| D | 9.910 - 10.250 | 0.390 - 0.404 |
| E | 8.950 - 9.750 | 0.352 - 0.384 |
| E1 | 12.650 - 13.050 | 0.498 - 0.514 |
| e | 2.540 TYP. | 0.100 TYP. |
| e1 | 4.980 - 5.180 | 0.196 - 0.204 |
| F | 2.650 - 2.950 | 0.104 - 0.116 |
| H | 7.900 - 8.100 | 0.311 - 0.319 |
| h | 0.000 - 0.300 | 0.000 - 0.012 |
| L | 12.900 - 13.400 | 0.508 - 0.528 |
| L1 | 2.850 - 3.250 | 0.112 - 0.128 |
| V | 6.900 REF. | 0.276 REF. |
| 3.400 - 3.800 | 0.134 - 0.150 |
Order Information
| Device | Package | Unit/Tube | Marking |
|---|---|---|---|
| SP010N13GTQ | TO-220-3L | 50 | 010N13G * |
* : Week code
2504101957_Siliup-SP010N13GTQ_C22466802.pdf
Related Products
N Channel Enhancement Mode MOSFET YANGJIE YJG130G04CQ Ideal for Power Switching and DC DC Conversion
Product OverviewThe YJG130G04CQ is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. It features split gate trench MOSFET technology, a high-density cell design for low RDS(ON), and an excellent package for heat dissipation. This transistor ...
Dual NPN Transistor XZT MMDT3904 in SOT-363 Package Designed for Amplification and Switching Tasks
Product OverviewThe MMDT3904 is a dual NPN transistor in a SOT-363 package. It is constructed using an epitaxial planar die and is ideal for low power amplification and switching applications.Product AttributesBrand: X T ELECTRONICSModel: MMDT3904Package: SOT-363Type: Dual Transistor (NPN+NPN...
complementary mosfets featuring xnrusemi xr20g10 with n channel and p channel fast switching capabilities
XR20G10 N-Ch and P-Ch Fast Switching MOSFETs Product Description The XR20G10 is a high-performance complementary N-channel and P-channel MOSFET series featuring extreme high cell density. This design provides excellent RDS(ON) and gate charge characteristics, making it ideal for synchronous buck ...
Zener diode YANGJIE BZX584B15VQ with 15 volt Zener voltage and 2 percent tolerance in compact SOD523 package
Product OverviewThe BZX584B3V6Q thru BZX584B36VQ series are small signal Zener diodes designed for general regulation functions. They feature an epoxy case that meets UL-94 V-0 flammability rating and is halogen-free, with Moisture Sensitivity Level 1. These diodes offer Zener voltages ranging from ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
