86--136 6733 2386
quality High Current 120V N Channel MOSFET Siliup SP012N02AGHTF with Low Gate Charge and Avalanche Energy Tested factory
quality High Current 120V N Channel MOSFET Siliup SP012N02AGHTF with Low Gate Charge and Avalanche Energy Tested factory

High Current 120V N Channel MOSFET Siliup SP012N02AGHTF with Low Gate Charge and Avalanche Energy Tested

Key Attributes
Model Number: SP012N02AGHTF
Product Custom Attributes
Drain To Source Voltage:
120V
Configuration:
-
Current - Continuous Drain(Id):
270A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3.3V@250uA
Reverse Transfer Capacitance (Crss@Vds):
48pF
Number:
-
Output Capacitance(Coss):
870pF
Pd - Power Dissipation:
310W
Input Capacitance(Ciss):
12.7nF
Gate Charge(Qg):
213nC@10V
Mfr. Part #:
SP012N02AGHTF
Package:
TO-247
Product Description

Product Overview

The SP012N02AGHTF is a 120V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) due to its advanced split gate trench technology. This device is designed for power switching applications, DC-DC converters, and power management systems. It has undergone 100% single pulse avalanche energy testing.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Product Code: SP012N02AGH
  • Package: TO-247

Technical Specifications

Parameter Symbol Rating Unit Test Condition
Drain-Source Voltage VDS 120 V
Gate-Source Voltage VGS 20 V
Continuous Drain Current (Tc=25) ID 270 A
Continuous Drain Current (Tc=100) ID 180 A
Pulsed Drain Current IDM 1080 A
Single Pulse Avalanche Energy EAS 2056 mJ VDD=50V,VGS=10V,L=0.5mH,RG=25
Power Dissipation (Tc=25) PD 310 W
Thermal Resistance Junction-to-Case RJC 0.4 /W
Storage Temperature Range TSTG -55 to 150
Operating Junction Temperature Range TJ -55 to 150
Drain-Source Breakdown Voltage BVDSS 120 V ID = 250A, VGS = 0V
Drain Cut-Off Current IDSS 1 A VDS = 96V, VGS = 0V
Gate Leakage Current IGSS 0.1 A VGS = 20V, VDS = 0V
Gate Threshold Voltage VGS(th) 2.5 - 4.5 V VDS = VGS, ID = 250A
Drain-Source ON Resistance RDS(ON) 2.0 m VGS = 10V, ID = 50A
Input Capacitance Ciss 12700 pF VDS = 60V, VGS = 0V, f = 1.0MHz
Output Capacitance Coss 870 pF
Reverse Transfer Capacitance Crss 48 pF
Total Gate Charge Qg 213 nC VDS=60V , VGS=10V , ID=75A
Gate-Source Charge Qgs 58 nC
Gate-Drain Charge Qg 59 nC
Turn-On Delay Time td(on) 24 nS VGS = 10V, VDS = 60V, ID = 75A RG = 1.6
Rise Time tr 28 nS
Turn-Off Delay Time td(off) 79 nS
Fall Time tf 31 nS
Source-Drain Diode Forward Voltage VSD 1.2 V IS = 1A, VGS = 0V
Maximum Body-Diode Continuous Current IS 270 A
Reverse Recovery Time Trr 112 nS IS=100A, di/dt=100A/us, TJ=25
Reverse Recovery Charge Qrr 289 nC

Package Information (TO-247)

Symbol Dimensions (mm) Dimensions (inches)
Min. Max. Min. Max.
A 4.850 5.150 0.191 0.200
A1 2.200 2.600 0.087 0.102
b 1.000 1.400 0.039 0.055
b1 2.800 3.200 0.110 0.126
b2 1.800 2.200 0.071 0.087
c 0.500 0.700 0.020 0.028
c1 1.900 2.100 0.075 0.083
D 15.450 15.750 0.608 0.620
E1 3.500 REF. 0.138 REF.
E2 3.600 REF. 0.142 REF.
L 40.900 41.300 1.610 1.626
L1 24.800 25.100 0.976 0.988
L2 20.300 20.600 0.799 0.811
7.100 7.300 0.280 0.287
e 5.450 TYP. 0.215 TYP.
H 5.980 REF. 0.235 REF.
h 0.000 0.300 0.000 0.012

2504101957_Siliup-SP012N02AGHTF_C42403243.pdf

Related Products
quality Digital transistor YANGJIE DTC124EUA featuring built in resistors and UL 94 V 0 rating for electronic factory
Digital transistor YANGJIE DTC124EUA featuring built in resistors and UL 94 V 0 rating for electronic
Product OverviewThe DTC124EUA is a digital transistor with built-in resistors, designed for easy configuration of inverter circuits without external input resistors. It features a surface mount package ideal for automatic insertion and meets UL-94 V-0 flammability rating. This NPN transistor is ...
quality Low RDS ON N Channel MOSFET YANGJIE YJG95G06B Suitable for High Current DC DC Converter Applications factory
Low RDS ON N Channel MOSFET YANGJIE YJG95G06B Suitable for High Current DC DC Converter Applications
Product OverviewThe YJG95G06B is an N-Channel Enhancement Mode Field Effect Transistor manufactured by Yangzhou Yangjie Electronic Technology Co., Ltd. Utilizing Split Gate Trench MOSFET technology and a high-density cell design, this transistor offers low RDS(ON) and excellent heat dissipation ...
quality Robust industrial IGBT module YANGJIE MG50HF12TLC1 with low VCEsat and high short circuit capability factory
Robust industrial IGBT module YANGJIE MG50HF12TLC1 with low VCEsat and high short circuit capability
Product OverviewThe MG50HF12TLC1 S-M392 is a high-performance IGBT module designed for inverter applications, AC/DC servo drive amplifiers, UPS systems, and soft switching welding machines. It features low VCE(sat) with Trench technology, a positive temperature coefficient for VCE(sat), high short ...
quality Planar die Zener diode XZT BZT52B9V1S designed for medium current applications and automated assembly factory
Planar die Zener diode XZT BZT52B9V1S designed for medium current applications and automated assembly
Product OverviewThe BZT52B2V4S thru BZT52B43S series are Zener diodes designed for general purpose, medium current applications. They are ideally suited for automated assembly processes and are available in a lead-free version. These diodes feature a planar die construction.Product AttributesBrand: ...
Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.