High Speed Switching N Channel MOSFET Siliup SP30N01NK with 30V Drain Source Voltage and PDFN Package
Key Attributes
Model Number:
SP30N01NK
Product Custom Attributes
Pd - Power Dissipation:
98W
Drain To Source Voltage:
30V
Configuration:
-
Current - Continuous Drain(Id):
120A
RDS(on):
1.3mΩ@10V;1.9mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
508pF
Number:
1 N-channel
Output Capacitance(Coss):
820pF
Input Capacitance(Ciss):
6.24nF
Gate Charge(Qg):
103nC@10V
Mfr. Part #:
SP30N01NK
Package:
PDFN-8L(5x6)
Product Description
Product Overview
The SP30N01NK is a 30V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high-performance applications, it features fast switching speeds and a low on-resistance of 1.3m at 10V VGS and 1.9m at 4.5V VGS. This device is ROHS Compliant, Halogen-Free, and has undergone 100% single pulse avalanche energy testing. It is suitable for DC-DC converters and motor control applications, packaged in a PDFN5X6-8L surface mount package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Type: N-Channel MOSFET
- Compliance: ROHS Compliant & Halogen-Free
- Testing: 100% Single Pulse avalanche energy Test
- Package: PDFN5X6-8L
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 30 | V | |||
| RDS(on) | @10V | 1.3 | m | |||
| RDS(on) | @4.5V | 1.9 | m | |||
| Continuous Drain Current | ID | 120 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | 30 | V | |||
| Gate-Source Voltage | VGSS | 20 | V | |||
| Continuous Drain Current (Silicon Limit) | ID | 220 | A | |||
| Continuous Drain Current (Package Limit) | ID | 120 | A | |||
| Continuous Drain Current (Tc=100C) | ID | 80 | A | |||
| Pulse Drain Current (Tested) | IDM | 480 | A | |||
| Single Pulsed Avalanche Energy | EAS | 784 | mJ | |||
| Power Dissipation (Tc=25C) | PD | 98 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 1.28 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 30 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=24V, VGS=0V, TJ=25 | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V, VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS, ID =250uA | 1 | 1.5 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V, ID =20A | - | 1.3 | 1.7 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =4.5V, ID =15A | - | 1.9 | 2.5 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=15V, VGS=0V, f=1MHz | - | 6240 | - | pF |
| Output Capacitance | Coss | - | 820 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 508 | - | pF | |
| Total Gate Charge | Qg | VDS=15V, VGS=10V, ID=30A | - | 103 | - | nC |
| Gate-Source Charge | Qgs | - | 15 | - | ||
| Gate-Drain Charge | Qg d | - | 16.3 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | Td(on) | VDD=15V, VGS=10V, RG=3, ID=30A | - | 13 | - | nS |
| Rise Time | Tr | - | 29 | - | ||
| Turn-Off Delay Time | Td(off) | - | 80 | - | ||
| Fall Time | Tf | - | 50 | - | ||
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V, IS=1A, TJ=25 | - | - | 1.2 | V |
| Diode Continuous Current | IS | - | - | 120 | A | |
| Reverse recover time | Trr | IS=20A, di/dt=100A/us, Tj=25 | - | 28 | - | nS |
| Reverse recovery charge | Qrr | - | 15 | - | nC | |
| Package Information (PDFN5X6-8L) | ||||||
| Symbol | Dimensions In Millimeters | Dimensions In Inches | Min. | Max. | Min. | Max. |
| A | 0.900 | 1.000 | 0.035 | 0.039 | ||
| A3 | 0.254REF. | 0.010REF. | ||||
| D | 4.944 | 5.096 | 0.195 | 0.201 | ||
| E | 5.974 | 6.126 | 0.235 | 0.241 | ||
| D1 | 3.910 | 4.110 | 0.154 | 0.162 | ||
| E1 | 3.375 | 3.575 | 0.133 | 0.141 | ||
| D2 | 4.824 | 4.976 | 0.190 | 0.196 | ||
| E2 | 5.674 | 5.826 | 0.223 | 0.229 | ||
| k | 1.190 | 1.390 | 0.047 | 0.055 | ||
| b | 0.350 | 0.450 | 0.014 | 0.018 | ||
| e | 1.270TYP. | 0.050TYP. | ||||
| L | 0.559 | 0.711 | 0.022 | 0.028 | ||
| L1 | 0.424 | 0.576 | 0.017 | 0.023 | ||
| H | 0.574 | 0.726 | 0.023 | 0.029 | ||
| 10 | 12 | 10 | 12 | |||
2504101957_Siliup-SP30N01NK_C42372339.pdf
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