60V P Channel MOSFET Siliup SP60P140T2 with 1.8A Drain Current and SOT 23 Package Semiconductor
Key Attributes
Model Number:
SP60P140T2
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
1.8A
RDS(on):
140mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
19pF
Number:
1 P-Channel
Output Capacitance(Coss):
28pF
Input Capacitance(Ciss):
455pF
Pd - Power Dissipation:
1W
Gate Charge(Qg):
9nC@10V
Mfr. Part #:
SP60P140T2
Package:
SOT-23
Product Description
Product Overview
The SP60P140T2 is a 60V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. This device offers high power and current handling capabilities, making it suitable for applications such as battery switches and DC/DC converters. It is available in a surface mount SOT-23 package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Type: P-Channel MOSFET
- Package: SOT-23
- Marking: 6P14
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | -60 | V | |||
| Static Drain-Source On-Resistance | RDS(on)TYP | -10V | 140 | m | ||
| -4.5V | 160 | m | ||||
| Continuous Drain Current | ID | -1.8 | A | |||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDSS | -60 | V | |||
| Gate-Source Voltage | VGSS | 20 | V | |||
| Continuous Drain Current | ID | -1.8 | A | |||
| Pulse Drain Current | IDM | -7.2 | A | |||
| Power Dissipation | PD | 1 | W | |||
| Thermal Resistance Junction-to-Ambient | RJA | 125 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250A | -60 | V | ||
| Drain-Source Leakage Current | IDSS | VDS=-48V , VGS=0V | -1 | uA | ||
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS , ID=-250A | -1.0 | -1.5 | -2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-10V , ID =-1.5A | 140 | 180 | m | |
| VGS=-4.5V , ID =-1A | 160 | 200 | m | |||
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=-30V , VGS=0V , f=1MHz | 455 | pF | ||
| Output Capacitance | Coss | 28 | ||||
| Reverse Transfer Capacitance | Crss | 19 | ||||
| Total Gate Charge | Qg | VDS=-30V , VGS=-10V , ID=-1.5A | 9 | nC | ||
| Gate-Source Charge | Qgs | 1.5 | ||||
| Gate-Drain Charge | Qg d | 2 | ||||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=-30V VGS=-10V , RG=10 , ID=-1.5A | 40 | nS | ||
| Turn-On Rise Time | tr | 36 | ||||
| Turn-Off Delay Time | td(off) | 15 | ||||
| Turn-Off Fall Time | tf | 10 | ||||
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A , TJ=25 | -1.2 | V | ||
| Package Information (SOT-23) | ||||||
| Symbol | Dimensions In Millimeters | Min. | Max. | |||
| A | 0.90 | 1.15 | ||||
| A1 | 0.00 | 0.10 | ||||
| A2 | 0.90 | 1.05 | ||||
| b | 0.30 | 0.50 | ||||
| c | 0.08 | 0.15 | ||||
| D | 2.80 | 3.00 | ||||
| E1 | 1.20 | 1.40 | ||||
| E | 2.25 | 2.55 | ||||
| e | 0.95 REF. | |||||
| e1 | 1.80 | 2.00 | ||||
| L | 0.55 REF. | |||||
| L1 | 0.30 | 0.50 | ||||
| 0 | 8 | |||||
2504101957_Siliup-SP60P140T2_C41354820.pdf
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