30V P Channel MOSFET Siliup SP30P13TH with TO 252 Package Low Gate Charge and Avalanche Energy Testing
Key Attributes
Model Number:
SP30P13TH
Product Custom Attributes
Pd - Power Dissipation:
35W
Drain To Source Voltage:
30V
Configuration:
-
Current - Continuous Drain(Id):
30A
Operating Temperature -:
-55℃~+150℃
RDS(on):
13mΩ@10V;22mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.6V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
300pF
Number:
1 P-Channel
Output Capacitance(Coss):
350pF
Input Capacitance(Ciss):
1.6nF
Gate Charge(Qg):
30nC@10V
Mfr. Part #:
SP30P13TH
Package:
TO-252-2L
Product Description
Product Overview
The SP30P13TH is a 30V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Engineered for efficient performance, it features fast switching, low gate charge, and low RDS(on). This MOSFET is 100% tested for single pulse avalanche energy and is suitable for applications such as DC-DC converters and load switching. It is supplied in a TO-252 package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Device Code: 30P13
- Package: TO-252
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | -30 | V | |||
| RDS(on) Typ | RDS(on)TYP | @ -10V | 13 | 18 | m | |
| RDS(on) Typ | RDS(on)TYP | @ -4.5V | 22 | 30 | m | |
| Continuous Drain Current | ID | -30 | A | |||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | -30 | V | |||
| Gate-Source Voltage | VGS | 12 | V | |||
| Continuous Drain Current (TC=25) | ID | -30 | A | |||
| Continuous Drain Current (TC=100) | ID | -20 | A | |||
| Pulsed Drain Current | IDM | -120 | A | |||
| Single Pulse Avalanche Energy | EAS | 210 | mJ | |||
| Power Dissipation (TC=25) | PD | 35 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 3.6 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250uA | -30 | V | ||
| Drain-Source Leakage Current | IDSS | VDS=-24V , VGS=0V , TJ=25 | -1 | uA | ||
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =-250uA | -1.2 | -1.6 | -2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-10V , ID=-20A | 13 | 18 | m | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-4.5V , ID=-15A | 22 | 30 | m | |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=-15V , VGS=0V , f=1MHz | 1600 | pF | ||
| Output Capacitance | Coss | 350 | pF | |||
| Reverse Transfer Capacitance | Crss | 300 | pF | |||
| Total Gate Charge | Qg | VDS=-15V , VGS=-10V , ID=-10A | 30 | nC | ||
| Gate-Source Charge | Qgs | 5.5 | nC | |||
| Gate-Drain Charge | Qgd | 8 | nC | |||
| Switching Characteristics | ||||||
| Turn-On Delay Time | Td(on) | VDD=-15V,VGS=-10V,RG=3, ID=-10A | 10 | nS | ||
| Rise Time | Tr | 60 | nS | |||
| Turn-Off Delay Time | Td(off) | 52 | nS | |||
| Fall Time | Tf | 70 | nS | |||
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A , TJ=25 | 1.2 | V | ||
| Maximum Body-Diode Continuous Current | IS | -30 | A | |||
| Reverse Recovery Time | Trr | IS=-5A, di/dt=100A/us, TJ=25 | 15 | nS | ||
| Reverse Recovery Charge | Qrr | 5 | nC | |||
| TO-252 Package Information (Dimensions in Millimeters) | |||
|---|---|---|---|
| Symbol | Min. | Max. | Note |
| A | 2.200 | 2.400 | |
| A1 | 0.000 | 0.127 | |
| b | 0.660 | 0.860 | |
| c | 0.460 | 0.580 | |
| D | 6.500 | 6.700 | |
| D1 | 5.100 | 5.460 | |
| D2 | 4.830 | REF. | |
| E | 6.000 | 6.200 | |
| e | 2.186 | 2.386 | |
| L | 9.800 | 10.400 | |
| L1 | 2.900 | REF. | |
| L2 | 1.400 | 1.700 | |
| L3 | 1.600 | REF. | |
| L4 | 0.600 | 1.000 | |
| 1.100 | 1.300 | ||
| 0 | 8 | ||
| h | 0.000 | 0.300 | |
| V | 5.350 | REF. | |
2504101957_Siliup-SP30P13TH_C41355025.pdf
Related Products
High Reliability Surface Mounted Rectifier ZHIDE SS510A Molded Plastic Epoxy UL 94V 0 Flame Retardant
Product OverviewThe SS52A-SS520A series are surface-mounted Schottky barrier rectifiers designed for high-reliability applications. They offer low reverse leakage, high forward surge capability, and are guaranteed for high-temperature soldering. These rectifiers are compliant with RoHS standards, ...
IGBT module YANGJIE MG200HF12MIC2 offering short circuit rating and fast soft reverse recovery diodes
Product OverviewThe MG200HF12MIC2 S-M304 is a high-performance IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient. This module offers fast switching and a ...
General purpose Zener diode YANGJIE BZX584B4V3 with cathode polarity and RoHS compliant certification
Product OverviewThe BZX584B2V4 THRU BZX584B36V series are high-reliability Zener diodes featuring very sharp reverse characteristics and low reverse current levels. They are designed for general-purpose applications and are available with Zener voltages ranging from 2.4V to 36V.Product AttributesBra...
High speed switching transistor YANGJIE DGP15N65CTL designed for hard and soft switching applications
Product OverviewThe DGP15N65CTL0 is a high-speed smooth switching IGBT discrete device designed for hard and soft switching applications. It features a maximum junction temperature of 175, a positive temperature coefficient, and high ruggedness with temperature stability. This IGBT is suitable for ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
