High Power P Channel MOSFET Siliup SP3415KT1 20V with ESD Protection and Compact SOT 23 3L Package
Key Attributes
Model Number:
SP3415KT1
Product Custom Attributes
Drain To Source Voltage:
20V
Configuration:
-
Current - Continuous Drain(Id):
6A
Operating Temperature -:
-55℃~+150℃
RDS(on):
27mΩ@4.5V;36mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
650mV@250uA
Reverse Transfer Capacitance (Crss@Vds):
96pF
Number:
1 P-Channel
Output Capacitance(Coss):
125pF
Pd - Power Dissipation:
1.2W
Input Capacitance(Ciss):
550pF
Gate Charge(Qg):
14nC@4.5V
Mfr. Part #:
SP3415KT1
Package:
SOT-23-3L
Product Description
Product Overview
The SP3415KT1 is a 20V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. This surface-mount device offers high power and current handling capabilities, making it suitable for applications such as battery switches and DC/DC converters. It features ESD protection up to 2KV and is available in a SOT-23-3L package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Device Code: 3415
- Package Type: SOT-23-3L
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDSS | -20 | V | |||
| Gate-Source Voltage | VGSS | 10 | V | |||
| Continuous Drain Current | ID | -6 | A | |||
| Pulse Drain Current | IDM | -24 | A | |||
| Power Dissipation | PD | 1.2 | W | |||
| Thermal Resistance Junction-to-Ambient | RJA | 104 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250A | -20 | V | ||
| Drain-Source Leakage Current | IDSS | VDS=-16V , VGS=0V | -1 | uA | ||
| Gate-Source Leakage Current | IGSS | VGS=10V , VDS=0V | 5 | uA | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS , ID=-250A | -0.4 | -0.65 | -1.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-4.5V , ID =-5.6A | 27 | 34 | m | |
| VGS=-2.5V , ID =-4.3A | 36 | 48 | m | |||
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=-10V , VGS=0V , f=1MHz | 550 | pF | ||
| Output Capacitance | Coss | 125 | pF | |||
| Reverse Transfer Capacitance | Crss | 96 | pF | |||
| Total Gate Charge | Qg | VDS=-10V , VGS=-4.5V , ID=-5A | 14 | nC | ||
| Gate-Source Charge | Qgs | 2 | ||||
| Gate-Drain Charge | Qgd | 2.5 | ||||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=-10V VGS=-4.5V , RG=3 , RL=2.5 | 5 | nS | ||
| Turn-On Rise Time | tr | 46 | ||||
| Turn-Off Delay Time | td(off) | 55 | ||||
| Turn-Off Fall Time | tf | 67 | ||||
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A , TJ=25 | -1.2 | V | ||
Package Information
| Symbol | Dimensions (mm) |
|---|---|
| A | 1.050 - 1.250 |
| A1 | 0.000 - 0.100 |
| A2 | 1.050 - 1.150 |
| b | 0.300 - 0.500 |
| c | 0.100 - 0.200 |
| D | 2.820 - 3.020 |
| E | 1.500 - 1.700 |
| E1 | 2.650 - 2.950 |
| e | 0.950 (Typ.) |
| e1 | 1.800 - 2.000 |
| L | 0.300 - 0.600 |
| 0 - 8 |
Order Information
| Device | Package | Unit/Tape |
|---|---|---|
| SP3415KT1 | SOT-23-3L | 3000 |
2504101957_Siliup-SP3415KT1_C41354972.pdf
Related Products
power switching device XCH XCH6003 trenched N channel MOSFET with low gate charge and fast switching
Product OverviewThe XCH6003 is a high cell density trenched N-channel MOSFET designed for efficient power switching applications. It offers excellent RDS(ON) and efficiency, making it suitable for most low-power switching and load switch applications. This device features super low gate charge and ...
Glass passivated bridge rectifier YONGYUTAI KBP310G offering 3 amp forward current and molded plastic construction
GLASS PASSIVATED BRIDGE RECTIFIERSIdeal for printed circuit board applications, these bridge rectifiers offer reliable, low-cost construction utilizing molded plastic techniques. The plastic material has a UL flammability classification of 94V-0. They are rated for reverse voltages from 50 to 1000V ...
Zener diode YANGJIE BZT52C3V0SQ featuring moisture sensitivity level 1 and solderable tin plated leads
Product OverviewThe BZT52C2V4SQ thru BZT52C47SQ series are small signal Zener diodes designed for general regulation functions, including automotive applications. They feature epoxy that meets UL-94 V-0 flammability rating and is halogen-free, with a Moisture Sensitivity Level 1. These diodes offer ...
Epoxy Encapsulation Zener Diode YANGJIE BZX84B6V8Q Small Signal Device With Automotive Qualification
Product OverviewThe BZX84B3V6Q thru BZX84B36Q series are small signal Zener diodes designed for general regulation functions. They feature epoxy encapsulation meeting UL-94 V-0 flammability rating and are halogen-free. These diodes offer a Zener voltage range from 3.6V to 36V with approximately 2% ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
