Low on resistance 3.0m at 10V Siliup SP20N03NJ 20V N-Channel MOSFET for power management applications
Product Overview
The SP20N03NJ is a 20V N-Channel MOSFET designed for efficient power management applications. It features fast switching speeds, low On-Resistance (3.0m at 10V and 3.5m at 4.5V), and is 100% tested for single pulse avalanche energy. This MOSFET is suitable for DC-DC converters and power management systems, offered in a compact PDFN3X3-8L package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP20N03NJ
- Device Code: 20N03
- Channel Type: N-Channel
- Voltage Rating: 20V
- Package: PDFN3X3-8L
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 20 | V | |||
| On-Resistance | RDS(on)TYP | @10V | 3.0 | m | ||
| On-Resistance | RDS(on)TYP | @4.5V | 3.5 | m | ||
| Continuous Drain Current | ID | 72 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | (Ta=25) | 30 | V | ||
| Gate-Source Voltage | VGSS | (Ta=25) | 12 | V | ||
| Continuous Drain Current | ID | (Tc=25C) | 72 | A | ||
| Pulse Drain Current | IDM | Tested | 288 | A | ||
| Single Pulse Avalanche Energy | EAS | 205 | mJ | |||
| Dissipation | PD | (Tc=25C) | 39 | W | ||
| Thermal Resistance Junction-to-Case | RJC | 3.2 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 20 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=16V , VGS=0V , TJ=25 | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=10V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 0.5 | 0.85 | 1.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V, ID=10A | - | 3 | 4.5 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=2.5V, ID=6A | - | 3.5 | 5.5 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=10V , VGS=0V , f=1MHz | - | 3935 | - | pF |
| Output Capacitance | Coss | - | 701 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 333 | - | pF | |
| Total Gate Charge | Qg | VGS=4.5V,VDS=10V,ID=30A | - | 65 | - | nC |
| Gate-Source Charge | Qgs | - | 8 | - | nC | |
| Gate-Drain Charge | Qg | - | 11 | - | nC | |
| Switching Characteristics | ||||||
| Turn-On Delay Time | Td(on) | VGS=10V,VDD=10V, ID=30A,RG=3 | - | 7 | - | nS |
| Rise Time | Tr | - | 19 | - | nS | |
| Turn-Off Delay Time | Td(off) | - | 72 | - | nS | |
| Fall Time | Tf | - | 68 | - | nS | |
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 72 | A | |
| Reverse recover time | Trr | IS=20A, di/dt=100A/us, TJ=25 | - | 16 | - | nS |
| Reverse recovery charge | Qrr | - | 5.6 | - | nC | |
| Package Information (PDFN3X3-8L) | ||||||
| Symbol | Dimensions In Millimeters | Dimensions In Inches | Min. | Max. | Min. | Max. |
| A | 0.650 - 0.850 | 0.026 - 0.033 | ||||
| A1 | 0.152 REF. | 0.006 REF. | ||||
| A2 | 0 - 0.05 | 0 - 0.002 | ||||
| D | 2.900 - 3.100 | 0.114 - 0.122 | ||||
| D1 | 2.300 - 2.600 | 0.091 - 0.102 | ||||
| E | 2.900 - 3.100 | 0.114 - 0.122 | ||||
| E1 | 3.150 - 3.450 | 0.124 - 0.136 | ||||
| E2 | 1.535 - 1.935 | 0.060 - 0.076 | ||||
| b | 0.200 - 0.400 | 0.008 - 0.016 | ||||
| e | 0.550 - 0.750 | 0.022 - 0.030 | ||||
| L | 0.300 - 0.500 | 0.012 - 0.020 | ||||
| L1 | 0.180 - 0.480 | 0.007 - 0.019 | ||||
| L2 | 0 - 0.100 | 0 - 0.004 | ||||
| L3 | 0 - 0.100 | 0 - 0.004 | ||||
| H | 0.315 - 0.515 | 0.012 - 0.020 | ||||
| 9 - 13 | 9 - 13 | |||||
2504101957_Siliup-SP20N03NJ_C41354838.pdf
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.