Low on resistance 3.0m at 10V Siliup SP20N03NJ 20V N-Channel MOSFET for power management applications

Key Attributes
Model Number: SP20N03NJ
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
72A
RDS(on):
3mΩ@10V;3.5mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
850mV@250uA
Reverse Transfer Capacitance (Crss@Vds):
333pF
Number:
1 N-channel
Output Capacitance(Coss):
701pF
Input Capacitance(Ciss):
3.935nF
Pd - Power Dissipation:
39W
Gate Charge(Qg):
65nC@4.5V
Mfr. Part #:
SP20N03NJ
Package:
PDFN-8L(3x3)
Product Description

Product Overview

The SP20N03NJ is a 20V N-Channel MOSFET designed for efficient power management applications. It features fast switching speeds, low On-Resistance (3.0m at 10V and 3.5m at 4.5V), and is 100% tested for single pulse avalanche energy. This MOSFET is suitable for DC-DC converters and power management systems, offered in a compact PDFN3X3-8L package.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Product Code: SP20N03NJ
  • Device Code: 20N03
  • Channel Type: N-Channel
  • Voltage Rating: 20V
  • Package: PDFN3X3-8L

Technical Specifications

Parameter Symbol Conditions Min. Typ. Max. Unit
Product Summary
Drain-Source Voltage V(BR)DSS 20 V
On-Resistance RDS(on)TYP @10V 3.0 m
On-Resistance RDS(on)TYP @4.5V 3.5 m
Continuous Drain Current ID 72 A
Absolute Maximum Ratings
Drain-Source Voltage VDSS (Ta=25) 30 V
Gate-Source Voltage VGSS (Ta=25) 12 V
Continuous Drain Current ID (Tc=25C) 72 A
Pulse Drain Current IDM Tested 288 A
Single Pulse Avalanche Energy EAS 205 mJ
Dissipation PD (Tc=25C) 39 W
Thermal Resistance Junction-to-Case RJC 3.2 C/W
Storage Temperature Range TSTG -55 150 C
Operating Junction Temperature Range TJ -55 150 C
Electrical Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V , ID=250uA 20 - - V
Drain-Source Leakage Current IDSS VDS=16V , VGS=0V , TJ=25 - - 1 uA
Gate-Source Leakage Current IGSS VGS=10V , VDS=0V - - 100 nA
Gate Threshold Voltage VGS(th) VGS=VDS , ID =250uA 0.5 0.85 1.0 V
Static Drain-Source On-Resistance RDS(ON) VGS=4.5V, ID=10A - 3 4.5 m
Static Drain-Source On-Resistance RDS(ON) VGS=2.5V, ID=6A - 3.5 5.5 m
Dynamic Characteristics
Input Capacitance Ciss VDS=10V , VGS=0V , f=1MHz - 3935 - pF
Output Capacitance Coss - 701 - pF
Reverse Transfer Capacitance Crss - 333 - pF
Total Gate Charge Qg VGS=4.5V,VDS=10V,ID=30A - 65 - nC
Gate-Source Charge Qgs - 8 - nC
Gate-Drain Charge Qg - 11 - nC
Switching Characteristics
Turn-On Delay Time Td(on) VGS=10V,VDD=10V, ID=30A,RG=3 - 7 - nS
Rise Time Tr - 19 - nS
Turn-Off Delay Time Td(off) - 72 - nS
Fall Time Tf - 68 - nS
Diode Characteristics
Diode Forward Voltage VSD VGS=0V , IS=1A , TJ=25 - - 1.2 V
Maximum Body-Diode Continuous Current IS - - 72 A
Reverse recover time Trr IS=20A, di/dt=100A/us, TJ=25 - 16 - nS
Reverse recovery charge Qrr - 5.6 - nC
Package Information (PDFN3X3-8L)
Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max.
A 0.650 - 0.850 0.026 - 0.033
A1 0.152 REF. 0.006 REF.
A2 0 - 0.05 0 - 0.002
D 2.900 - 3.100 0.114 - 0.122
D1 2.300 - 2.600 0.091 - 0.102
E 2.900 - 3.100 0.114 - 0.122
E1 3.150 - 3.450 0.124 - 0.136
E2 1.535 - 1.935 0.060 - 0.076
b 0.200 - 0.400 0.008 - 0.016
e 0.550 - 0.750 0.022 - 0.030
L 0.300 - 0.500 0.012 - 0.020
L1 0.180 - 0.480 0.007 - 0.019
L2 0 - 0.100 0 - 0.004
L3 0 - 0.100 0 - 0.004
H 0.315 - 0.515 0.012 - 0.020
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2504101957_Siliup-SP20N03NJ_C41354838.pdf

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