Fast switching 30V MOSFET Siliup SP3022CNJ with 100 percent avalanche energy test and ROHS compliant design

Key Attributes
Model Number: SP3022CNJ
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
8A;7A
Operating Temperature -:
-55℃~+150℃
RDS(on):
15mΩ@10V;18mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.6V@250uA;1.5V@250uA
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
51pF;142pF
Number:
1 N-Channel + 1 P-Channel
Output Capacitance(Coss):
62pF;146pF
Input Capacitance(Ciss):
416pF;1.07nF
Pd - Power Dissipation:
14W
Gate Charge(Qg):
5nC@4.5V;21nC@10V
Mfr. Part #:
SP3022CNJ
Package:
PDFNWB-8L(3.3x3.3)
Product Description

Product Overview

The SP3022CNJ is a 30V complementary MOSFET from Siliup Semiconductor Technology Co. Ltd. It offers fast switching speeds and is available in a surface mount PDFN3X3-8L package. This device is ROHS Compliant & Halogen-Free and has undergone 100% Single Pulse avalanche energy testing. It is suitable for applications such as DC-DC Converters and Motor Control.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Product Code: SP3022CNJ
  • Package: PDFN3X3-8L
  • Certifications: ROHS Compliant & Halogen-Free
  • Testing: 100% Single Pulse avalanche energy Test

Technical Specifications

N-Channel Specifications:

Parameter Symbol Conditions Min. Typ. Max. Unit
Drain-Source Voltage (V(BR)DSS) V(BR)DSS VGS=0V , ID=250uA 30 - - V
Static Drain-Source On-Resistance (RDS(on)) RDS(ON) VGS = 10V, ID = 8A - 15 19 m
Static Drain-Source On-Resistance (RDS(on)) RDS(ON) VGS = 4.5V, ID = 6A - 21 28 m
Continuous Drain Current (Tc=25C) ID (Tc=25C) - - 8 A
Single pulsed avalanche energy EAS (VDD=15V,VGS =10V,L = 0.5mH, Rg=25) - 30 - mJ
Input Capacitance Ciss VDS=15V , VGS=0V , f=1MHz - 416 - pF
Output Capacitance Coss - - 62 - pF
Reverse Transfer Capacitance Crss - - 51 - pF
Total Gate Charge Qg VDS=15V , VGS=4.5V , ID=8A - 5 - nC
Gate Threshold Voltage VGS(th) VGS=VDS , ID =250uA 1.0 1.6 2.5 V

P-Channel Specifications:

Parameter Symbol Conditions Min. Typ. Max. Unit
Drain-Source Voltage (V(BR)DSS) V(BR)DSS VGS=0V , ID=-250uA -30 - - V
Static Drain-Source On-Resistance (RDS(ON)) RDS(ON) VGS =-10V, ID =-8A - 18 23 m
Static Drain-Source On-Resistance (RDS(ON)) RDS(ON) VGS =-4.5V, ID =-6A - 25 34 m
Continuous Drain Current (Tc=25C) ID (Tc=25C) - - -7 A
Single pulsed avalanche energy EAS (VDD=-15V,VGS =-10V,L = 0.5mH, Rg=25) - 49 - mJ
Input Capacitance Ciss VDS=-15V , VGS=0V , f=1MHz - 1070 - pF
Output Capacitance Coss - - 146 - pF
Reverse Transfer Capacitance Crss - - 142 - pF
Total Gate Charge Qg VDS=-30V , VGS=-10V , ID=-6A - 21 - nC
Gate Threshold Voltage VGS(th) VGS=VDS , ID =-250uA -1.0 -1.5 -2.5 V

General Specifications:

Parameter Symbol Rating Unit
Gate-Source Voltage VGS 20 V
Power Dissipation (Tc=25C) PD 14 W
Thermal Resistance Junction-to-Case RJC 8.9 C/W
Storage Temperature Range TSTG -55 to 150 C
Operating Junction Temperature Range TJ -55 to 150 C

Package Information (PDFN3X3-8L):

Symbol Dimensions In Millimeters Dimensions In Inches
Min. Max. Min. Max.
A 0.650 0.850 0.026 0.033
A1 0.152 REF. 0.006 REF.
A2 0~0.05 0~0.002
D 2.900 3.100 0.114 0.122
D1 0.935 1.135 0.037 0.045
D2 0.280 0.480 0.011 0.019
E 2.900 3.100 0.114 0.122
E1 3.150 3.450 0.124 0.136
E2 1.535 1.935 0.060 0.076
b 0.200 0.400 0.008 0.016
e 0.550 0.750 0.022 0.030
L 0.300 0.500 0.012 0.020
L1 0.180 0.480 0.007 0.019
L2 0~0.100 0~0.004
L3 0~0.100 0~0.004
H 0.315 0.515 0.012 0.020
9 13 9 13

2504101957_Siliup-SP3022CNJ_C22385437.pdf

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