Durable Siliup SP20N04TH N Channel MOSFET ideal for synchronous rectification and power conversion
Key Attributes
Model Number:
SP20N04TH
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
80A
RDS(on):
6.5mΩ@2.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Reverse Transfer Capacitance (Crss@Vds):
355pF
Number:
1 N-channel
Output Capacitance(Coss):
398pF
Input Capacitance(Ciss):
3.18nF
Pd - Power Dissipation:
39W
Gate Charge(Qg):
36nC@10V
Mfr. Part #:
SP20N04TH
Package:
TO-252-2L
Product Description
Product Overview
The SP20N04TH is a 20V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for efficient power management. It features fast switching speeds, low gate charge, and low RDS(on), making it ideal for DC-DC converters and high-frequency switching applications, including synchronous rectification. The device is 100% tested for single pulse avalanche energy, ensuring robust performance.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP20N04TH
- Device Type: N-Channel MOSFET
- Package: TO-252
- Origin: China (implied by www.siliup.com)
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | V(BR)DSS | 20 | V | |||
| RDS(on) TYP @ 4.5V | RDS(on) | @4.5V | 4.1 | m | ||
| RDS(on) TYP @ 2.5V | RDS(on) | @2.5V | 5.7 | m | ||
| ID | ID | 80 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25) | 20 | V | ||
| Gate-Source Voltage | VGS | (Ta=25) | 12 | V | ||
| Continuous Drain Current (TC=25) | ID | (TC=25) | 80 | A | ||
| Continuous Drain Current (TC=100) | ID | (TC=100) | 53 | A | ||
| Pulsed Drain Current | IDM | 320 | A | |||
| Single Pulse Avalanche Energy | EAS | 1 | 100 | mJ | ||
| Power Dissipation (TC=25) | PD | (TC=25) | 39 | W | ||
| Thermal Resistance Junction-to-Case | RJC | 3.2 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 20 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=16V, VGS=0V, TJ=25 | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=12V, VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS, ID=250uA | 0.4 | 0.7 | 1.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V, ID=20A | - | 3.8 | 4.9 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=2.5V, ID=15A | - | 5.0 | 6.5 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=10V, VGS=0V, f=1MHz | - | 3180 | - | pF |
| Output Capacitance | Coss | - | 398 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 355 | - | pF | |
| Total Gate Charge | Qg | VDS=20V, VGS=4.5V, ID=1A | - | 2.3 | - | nC |
| Gate-Source Charge | Qgs | - | 7 | - | nC | |
| Gate-Drain Charge | Qgd | - | 4.5 | - | nC | |
| Switching Characteristics | ||||||
| Turn-On Delay Time | Td(on) | VGS=4.5V, VDD=10V, ID=2A, RG=3 | - | 13 | - | nS |
| Rise Time | Tr | - | 31 | - | nS | |
| Turn-Off Delay Time | Td(off) | - | 73 | - | nS | |
| Fall Time | Tf | - | 92 | - | nS | |
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V, IS=1A, TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 80 | A | |
| Reverse Recovery Time | Trr | IS=20A, di/dt=100A/us, TJ=25 | - | 13 | - | nS |
| Reverse Recovery Charge | Qrr | - | 4 | - | nC | |
| Package Information (TO-252) | ||||||
| Dimension Symbol | Millimeters (Min-Max) | Inches (Min-Max) | ||||
| A | 2.200 - 2.400 | 0.087 - 0.094 | ||||
| A1 | 0.000 - 0.127 | 0.000 - 0.005 | ||||
| b | 0.660 - 0.860 | 0.026 - 0.034 | ||||
| c | 0.460 - 0.580 | 0.018 - 0.023 | ||||
| D | 6.500 - 6.700 | 0.256 - 0.264 | ||||
| D1 | 5.100 - 5.460 | 0.201 - 0.215 | ||||
| D2 | 4.830 (REF) | 0.190 (REF) | ||||
| E | 6.000 - 6.200 | 0.236 - 0.244 | ||||
| e | 2.186 - 2.386 | 0.086 - 0.094 | ||||
| L | 9.800 - 10.400 | 0.386 - 0.409 | ||||
| L1 | 2.900 (REF) | 0.114 (REF) | ||||
| L2 | 1.400 - 1.700 | 0.055 - 0.067 | ||||
| L3 | 1.600 (REF) | 0.063 (REF) | ||||
| L4 | 0.600 - 1.000 | 0.024 - 0.039 | ||||
| 1.100 - 1.300 | 0.043 - 0.051 | |||||
| 0 - 8 | 0 - 8 | |||||
| h | 0.000 - 0.300 | 0.000 - 0.012 | ||||
| V | 5.350 (REF) | 0.211 (REF) | ||||
2504101957_Siliup-SP20N04TH_C41354840.pdf
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