Complementary MOSFET Siliup SP3034CP8 30V Device for Load Switch Battery Protection Power Management
Key Attributes
Model Number:
SP3034CP8
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
28mΩ@10V;38mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.6V@250uA;1.5V@250uA
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
17pF;57pF
Number:
1 N-Channel + 1 P-Channel
Input Capacitance(Ciss):
235pF;501pF
Output Capacitance(Coss):
45pF;72pF
Pd - Power Dissipation:
2W
Gate Charge(Qg):
6.5nC@10V;9nC@10V
Mfr. Part #:
SP3034CP8
Package:
SOP-8
Product Description
Product Overview
The SP3034CP8 is a 30V Complementary MOSFET from Siliup Semiconductor Technology Co. Ltd. This device offers high power and current handling capability, making it suitable for applications such as battery protection, load switching, and power management. It is available in a lead-free, surface mount SOP-8L package and has undergone 100% single pulse avalanche energy testing.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Type: Complementary MOSFET
- Package: SOP-8L
- Lead Status: Lead-free product acquired
- Testing: 100% Single Pulse avalanche energy Test
- Device Code: 3034C
Technical Specifications
| Product Summary | N-Channel | P-Channel | |
| V(BR)DSS | 30V | -30V | |
| RDS(on)TYP | 28m@10V, 42m@4.5V | 38m@-10V, 58m@-4.5V | |
| ID | 5A | -5A | |
| Applications | Battery Protection, Load Switch, Power Management | ||
| Parameter | Symbol | N-Channel | P-Channel | Units | ||
|---|---|---|---|---|---|---|
| Conditions | Value | Conditions | Value | |||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | 30 | -30 | V | ||
| Gate-Source Voltage | VGS | 20 | 20 | V | ||
| Continuous Drain Current | ID | 5 | -5 | A | ||
| Pulsed Drain Current | IDM | 28 | -32 | A | ||
| Power Dissipation | PD | 2 | W | |||
| Thermal Resistance Junction-to-Ambient | RJA | 62.5 | /W | |||
| Storage Temperature Range | TSTG | -55 to 150 | ||||
| Operating Junction Temperature Range | TJ | -55 to 150 | ||||
| N-Channel Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 30 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=24V , VGS=0V , TJ=25 | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 1 | 1.6 | 2.2 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V , ID=3.2A | - | 28 | 38 | m |
| VGS=4.5V , ID=2.8A | - | 42 | 55 | m | ||
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=15V , VGS=0V , f=1MHz | - | 235 | - | pF |
| Output Capacitance | Coss | - | 45 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 17 | - | pF | |
| Total Gate Charge | Qg | VDS=15V , VGS=10V , ID=4A | - | 6.5 | - | nC |
| Gate-Source Charge | Qgs | - | 1.5 | - | ||
| Gate-Drain Charge | Qgd | - | 2 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | Td(on) | VDD=15V, VGS=10V , RG=1, ID=4A | - | 3 | - | nS |
| Rise Time | Tr | - | 16 | - | ||
| Turn-Off Delay Time | Td(off) | - | 12 | - | ||
| Fall Time | Tf | - | 4 | - | ||
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 5 | A | |
| Reverse Recovery Time | Trr | IS=4A, di/dt=100A/us, TJ=25 | - | 6.5 | - | nS |
| Reverse Recovery Charge | Qrr | - | 5 | - | nC | |
| P-Channel Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250uA | -30 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=-24V , VGS=0V , TJ=25 | - | - | -1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =-250uA | -1 | -1.5 | -2.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-10V , ID=-4.1A | - | 38 | 50 | m |
| VGS=-4.5V , ID=-3A | - | 58 | 80 | m | ||
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=-15V , VGS=0V , f=1MHz | - | 501 | - | pF |
| Output Capacitance | Coss | - | 72 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 57 | - | pF | |
| Total Gate Charge | Qg | VDS=-15V , VGS=-10V , ID=-5A | - | 9 | - | nC |
| Gate-Source Charge | Qgs | - | 1.5 | - | ||
| Gate-Drain Charge | Qg | - | 2.3 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | Td(on) | VDD=-15V, VGS=-10V , RG=3, ID=-1A | - | 8.6 | - | nS |
| Rise Time | Tr | - | 5.0 | - | ||
| Turn-Off Delay Time | Td(off) | - | 28.2 | - | ||
| Fall Time | Tf | - | 13.5 | - | ||
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A , TJ=25 | - | - | -1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | -5 | A | |
| Reverse Recovery Time | Trr | IS=-5A, di/dt=100A/us, TJ=25 | - | 31 | - | nS |
| Reverse Recovery Charge | Qrr | - | 10 | - | nC | |
| SOP-8L Package Information | ||
|---|---|---|
| Symbol | Dimensions In Millimeters | |
| Min. | Max. | |
| A | 1.35 | 1.75 |
| A1 | 0.10 | 0.25 |
| A2 | 1.35 | 1.55 |
| b | 0.33 | 0.51 |
| c | 0.17 | 0.25 |
| D | 4.80 | 5.00 |
| e | 1.27 REF. | |
| E | 5.80 | 6.20 |
| E1 | 3.80 | 4.00 |
| L | 0.40 | 1.27 |
| 0 | 8 | |
2504101957_Siliup-SP3034CP8_C22385402.pdf
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