Low Gate Charge 110V N Channel MOSFET Siliup SP011N03GHTD for Hard Switched and Power Management Systems
Key Attributes
Model Number:
SP011N03GHTD
Product Custom Attributes
Drain To Source Voltage:
110V
Current - Continuous Drain(Id):
180A
RDS(on):
3.6mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
35pF
Number:
1 N-channel
Output Capacitance(Coss):
1.067nF
Pd - Power Dissipation:
195W
Input Capacitance(Ciss):
7.162nF
Gate Charge(Qg):
105nC@0V
Mfr. Part #:
SP011N03GHTD
Package:
TO-263
Product Description
Product Overview
The SP011N03GHTD is a 110V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. This device features fast switching, low Gate Charge and RDS(on), and utilizes advanced Split Gate Trench Technology. It is 100% tested for single pulse avalanche energy. Ideal for PWM applications, hard switched and high frequency circuits, and power management systems.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP011N03GHTD
- Technology: Advanced Split Gate Trench Technology
- Channel Type: N-Channel
- Package: TO-263
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Breakdown Voltage (Drain-Source) | V(BR)DSS | 110 | V | |||
| On-Resistance (Typical) | RDS(on)TYP | @10V | 2.9 | m | ||
| Continuous Drain Current | ID | 180 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25, unless otherwise noted) | 110 | V | ||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current (Tc=25) | ID | 180 | A | |||
| Continuous Drain Current (Tc=100) | ID | 120 | A | |||
| Pulsed Drain Current | IDM | 720 | A | |||
| Single Pulse Avalanche Energy | EAS | 1260 | mJ | |||
| Power Dissipation (Tc=25) | PD | 195 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 0.64 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | ID = 250A, VGS = 0V | 110 | - | - | V |
| Drain Cut-Off Current | IDSS | VDS = 80V, VGS = 0V | - | - | 1 | A |
| Gate Leakage Current | IGSS | VGS = 20V, VDS = 0V | - | - | 0.1 | A |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250A | 2.0 | 3.0 | 4 | V |
| Drain-Source ON Resistance | RDS(ON) | VGS = 10V, ID = 20A | - | 2.9 | 3.6 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS =50V, VGS = 0V, f = 1.0MHz | - | 7162 | - | pF |
| Output Capacitance | Coss | - | 1067 | - | ||
| Reverse Transfer Capacitance | Crss | - | 35 | - | ||
| Total Gate Charge | Qg | VDS=50V , VGS=10V , ID=20A | - | 105 | - | nC |
| Gate-Source Charge | Qgs | - | 47 | - | ||
| Gate-Drain Charge | Qg d | - | 23 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VGS = 10V, VDS = 50V, RL=2.5 RG = 6.0 | - | 26 | - | nS |
| Rise Time | tr | - | 75 | - | ||
| Turn-Off Delay Time | td(off) | - | 87 | - | ||
| Fall Time | tf | - | 30 | - | ||
| Drain-Source Body Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | IS = 1A, VGS = 0V | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 180 | A | |
| Reverse Recovery Time | Trr | IS=100A, di/dt=100A/us, TJ=25 | - | 62 | - | nS |
| Reverse Recovery Charge | Qrr | - | 160 | - | nC | |
| Package Information (TO-263) | ||||||
| Symbol | Dimensions (mm) Min | Dimensions (mm) Max | Dimensions (in) Min | Dimensions (in) Max | ||
| A | 4.470 | 4.670 | 0.176 | 0.184 | ||
| A1 | 0.000 | 0.150 | 0.000 | 0.006 | ||
| B | 1.120 | 1.420 | 0.044 | 0.056 | ||
| b | 0.710 | 0.910 | 0.028 | 0.036 | ||
| b1 | 1.170 | 1.370 | 0.046 | 0.054 | ||
| c | 0.310 | 0.530 | 0.012 | 0.021 | ||
| c1 | 1.170 | 1.370 | 0.046 | 0.054 | ||
| D | 10.010 | 10.310 | 0.394 | 0.406 | ||
| E | 8.500 | 8.900 | 0.335 | 0.350 | ||
| e | 2.540 TYP. | 0.100 TYP. | ||||
| e1 | 4.980 | 5.180 | 0.196 | 0.204 | ||
| L | 14.940 | 15.500 | 0.588 | 0.610 | ||
| L1 | 4.950 | 5.450 | 0.195 | 0.215 | ||
| L2 | 2.340 | 2.740 | 0.092 | 0.108 | ||
| L3 | 1.300 | 1.700 | 0.051 | 0.067 | ||
| 0 | 8 | 0 | 8 | |||
| V | 5.600 REF. | 0.220 REF. | ||||
2504101957_Siliup-SP011N03GHTD_C45351230.pdf
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