Siliup 2SK3018 60V N Channel MOSFET Featuring 2KV ESD Protection and SOT 323 Package for Power Conversion
Key Attributes
Model Number:
2SK3018
Product Custom Attributes
Drain To Source Voltage:
60V
Configuration:
-
Current - Continuous Drain(Id):
100mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
2Ω@10V
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Reverse Transfer Capacitance (Crss@Vds):
2.5pF
Number:
1 N-channel
Output Capacitance(Coss):
6pF
Pd - Power Dissipation:
300mW
Input Capacitance(Ciss):
12pF
Gate Charge(Qg):
1.34nC@15V
Mfr. Part #:
2SK3018
Package:
SOT-323
Product Description
Product Overview
The 2SK3018 is a 60V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It offers high power and current handling capability, making it suitable for battery switch and DC/DC converter applications. This surface mount device features ESD protection of 2KV and is available in a SOT-323 package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Type: N-Channel MOSFET
- Package Type: SOT-323
- ESD Protection: 2KV
- Marking Code: KN
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 60 | V | |||
| Static Drain-Source On-Resistance | RDS(on) | 10V | 2 | |||
| Static Drain-Source On-Resistance | RDS(on) | 4.5V | 2.5 | |||
| Continuous Drain Current | ID | 100 | mA | |||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDSS | 60 | V | |||
| Gate-Source Voltage | VGSS | 20 | V | |||
| Continuous Drain Current | ID | 100 | mA | |||
| Pulse Drain Current | IDM | Tested | 400 | mA | ||
| Power Dissipation | PD | 300 | mW | |||
| Thermal Resistance Junction-to-Ambient | RJA | 416 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250A | 60 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=48V , VGS=0V | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 10 | uA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS , ID=250A | 0.7 | 1 | 1.45 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V, ID =200mA | - | 2 | 5 | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =4.5V, ID =100mA | - | 2.5 | 8 | |
| Input Capacitance | Ciss | VDS=25V , VGS=0V , f=1MHz | - | 12 | - | pF |
| Output Capacitance | Coss | - | 6 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 2.5 | - | pF | |
| Total Gate Charge | Qg | VDS=10V , VGS=15V , ID=1A | - | 1.34 | - | nC |
| Gate-Source Charge | Qgs | - | 0.29 | - | ||
| Gate-Drain Charge | Qgd | - | 0.2 | - | ||
| Turn-On Delay Time | td(on) | VDD=15V VGS=10V , RG=2.3 , ID=1A | - | 5 | - | nS |
| Turn-On Rise Time | tr | - | 18 | - | ||
| Turn-Off Delay Time | td(off) | - | 8 | - | ||
| Turn-Off Fall Time | tf | - | 14 | - | ||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| SOT-323 Package Information | ||||||
| Symbol | Dimensions In Millimeters | Dimensions In Inches | Min. | Max. | Min. | Max. |
| A | 0.900 | 1.100 | 0.035 | 0.043 | ||
| A1 | 0.000 | 0.100 | 0.000 | 0.004 | ||
| A2 | 0.900 | 1.000 | 0.035 | 0.039 | ||
| b | 0.200 | 0.400 | 0.008 | 0.016 | ||
| c | 0.080 | 0.150 | 0.003 | 0.006 | ||
| D | 2.000 | 2.200 | 0.079 | 0.087 | ||
| E | 1.150 | 1.350 | 0.045 | 0.053 | ||
| E1 | 2.000 | 2.450 | 0.085 | 0.096 | ||
| e | 0.650 TYP. | 0.026 TYP. | ||||
| e1 | 1.200 | 1.400 | 0.047 | 0.055 | ||
| L | 0.525 REF. | 0.021 REF. | ||||
| L1 | 0.260 | 0.460 | 0.010 | 0.018 | ||
| 0 | 8 | 0 | 8 | |||
2504101957_Siliup-2SK3018_C41349572.pdf
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