N Channel Power MOSFET with 150V Rating Siliup SP015N06GHTQ Featuring Low RDSon and TO220 Package
Key Attributes
Model Number:
SP015N06GHTQ
Product Custom Attributes
Drain To Source Voltage:
150V
Current - Continuous Drain(Id):
140A
Operating Temperature -:
-55℃~+150℃
RDS(on):
6.7mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Reverse Transfer Capacitance (Crss@Vds):
14pF
Number:
1 N-channel
Output Capacitance(Coss):
430pF
Input Capacitance(Ciss):
5.24nF
Pd - Power Dissipation:
230W
Gate Charge(Qg):
70nC@10V
Mfr. Part #:
SP015N06GHTQ
Package:
TO-220-3L
Product Description
Product Overview
The SP015N06GHTQ is a 150V N-Channel Power MOSFET from Siliup Semiconductor Technology Co., Ltd. This device features fast switching, low gate charge, and low RDS(on), leveraging advanced split gate trench technology. It is 100% tested for single pulse avalanche energy and is ideal for power switching applications, DC-DC converters, and power management systems. The MOSFET is housed in a TO-220-3L package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP015N06GH
- Package: TO-220-3L (1:G 2:D 3:S)
- Technology: Advanced Split Gate Trench Technology
- Channel Type: N-Channel
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | 150V | V | ||||
| RDS(on)TYP | @10V | 6.7m | ||||
| ID | 140A | |||||
| Absolute Maximum Ratings (TA=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | 150 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current (TC=25) | ID | 140 | A | |||
| Continuous Drain Current (TC=100) | ID | 95 | A | |||
| Pulsed Drain Current | IDM | 560 | A | |||
| Single Pulse Avalanche Energy1 | EAS | 812 | mJ | |||
| Power Dissipation (TC=25) | PD | 230 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 0.54 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics (TA=25, unless otherwise noted) | ||||||
| Static Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | ID = 250A, VGS = 0V | 150 | - | - | V |
| Drain Cut-Off Current | IDSS | VDS = 120V, VGS = 0V | - | - | 1 | A |
| Gate Leakage Current | IGSS | VGS = 20V, VDS = 0V | - | - | 0.1 | A |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250A | 2.0 | 3.0 | 4.0 | V |
| Drain-Source ON Resistance | RDS(ON) | VGS = 10V, ID = 20A | - | 6.7 | 8.5 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS = 75V, VGS = 0V, f = 1.0MHz | - | 5240 | - | pF |
| Output Capacitance | Coss | - | 430 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 14 | - | pF | |
| Total Gate Charge | Qg | VDS=75V , VGS=10V , ID=70A | - | 70 | - | nC |
| Gate-Source Charge | Qgs | - | 31 | - | ||
| Gate-Drain Charge | Qgd | - | 20 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VGS = 10V, VDS = 50V, ID = 70A, RG = 6 | - | 24 | - | nS |
| Rise Time | tr | - | 35 | - | ||
| Turn-Off Delay Time | td(off) | - | 46 | - | ||
| Fall Time | tf | - | 15 | - | ||
| Drain-Source Body Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | IS = 1A, VGS = 0V | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 140 | A | |
| Body Diode Reverse Recovery Time | trr | IS=50A, di/dt=100A/s, TJ=25 | - | 98 | - | nS |
| Body Diode Reverse Recovery Charge | Qrr | - | 217 | - | nC | |
Note: 1 The test condition is VDD=50V, VGS=10V, L=0.5mH, RG=25.
TO-220-3L Package Information (Dimensions in Millimeters/Inches)
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
|---|---|---|---|---|
| Min. | Max. | Min. | Max. | |
| A | 4.400 | 4.600 | 0.173 | 0.181 |
| A1 | 2.250 | 2.550 | 0.089 | 0.100 |
| b | 0.710 | 0.910 | 0.028 | 0.036 |
| b1 | 1.170 | 1.370 | 0.046 | 0.054 |
| c | 0.330 | 0.650 | 0.013 | 0.026 |
| c1 | 1.200 | 1.400 | 0.047 | 0.055 |
| D | 9.910 | 10.250 | 0.390 | 0.404 |
| E | 8.950 | 9.750 | 0.352 | 0.384 |
| E1 | 12.650 | 13.050 | 0.498 | 0.514 |
| e | 2.540 TYP. | 0.100 TYP. | ||
| e1 | 4.980 | 5.180 | 0.196 | 0.204 |
| F | 2.650 | 2.950 | 0.104 | 0.116 |
| H | 7.900 | 8.100 | 0.311 | 0.319 |
| h | 0.000 | 0.300 | 0.000 | 0.012 |
| L | 12.900 | 13.400 | 0.508 | 0.528 |
| L1 | 2.850 | 3.250 | 0.112 | 0.128 |
| V | 6.900 REF. | 0.276 REF. | ||
| 3.400 | 3.800 | 0.134 | 0.150 |
2504101957_Siliup-SP015N06GHTQ_C22385397.pdf
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