power management solution featuring Siliup SP60N13NK 60V N Channel MOSFET with fast switching speeds

Key Attributes
Model Number: SP60N13NK
Product Custom Attributes
Drain To Source Voltage:
60V
Configuration:
-
Current - Continuous Drain(Id):
45A
Operating Temperature -:
-55℃~+150℃
RDS(on):
13mΩ@10V;17mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.8V@250uA
Reverse Transfer Capacitance (Crss@Vds):
120pF
Number:
1 N-channel
Output Capacitance(Coss):
158pF
Pd - Power Dissipation:
60W
Input Capacitance(Ciss):
2.05nF
Gate Charge(Qg):
19nC@10V
Mfr. Part #:
SP60N13NK
Package:
PDFN-8L(5x6)
Product Description

Product Overview

The SP60N13NK is a 60V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for efficient power management, it features fast switching speeds and a surface mount PDFN5X6-8L package. This device is ROHS Compliant & Halogen-Free and has undergone 100% Single Pulse avalanche energy testing. It is suitable for applications such as DC-DC converters and motor control.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Model: SP60N13NK
  • Channel Type: N-Channel
  • Package: PDFN5X6-8L
  • Compliance: ROHS Compliant & Halogen-Free
  • Testing: 100% Single Pulse avalanche energy Test
  • Device Code: 60N13

Technical Specifications

Parameter Symbol Conditions Min. Typ. Max. Unit
Product Summary
Drain-Source Voltage V(BR)DSS 60 V
RDS(on) @10V 13 17 m
RDS(on) @4.5V 17 23 m
Continuous Drain Current ID @10V 45 A
Absolute Maximum Ratings
Drain-Source Voltage VDSS 60 V
Gate-Source Voltage VGSS 20 V
Continuous Drain Current (Tc=25C) ID 45 A
Continuous Drain Current (Tc=100C) ID 30 A
Pulse Drain Current Tested IDM 180 A
Single Pulsed Avalanche Energy EAS 132 mJ
Power Dissipation (Tc=25C) PD 60 W
Thermal Resistance Junction-to-Case RJC 2.08 C/W
Storage Temperature Range TSTG -55 150 C
Operating Junction Temperature Range TJ -55 150 C
Electrical Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V , ID=250uA 60 - - V
Drain-Source Leakage Current IDSS VDS=48V , VGS=0V , TJ=25 - - 1 uA
Gate-Source Leakage Current IGSS VGS=20V , VDS=0V - - 100 nA
Gate Threshold Voltage VGS(th) VGS=VDS , ID =250uA 1.0 1.8 2.5 V
Static Drain-Source On-Resistance RDS(ON) VGS =10V, ID =20A - 13 17 m
Static Drain-Source On-Resistance RDS(ON) VGS =4.5V, ID =20A - 17 23 m
Dynamic Characteristics
Input Capacitance Ciss VDS=30V , VGS=0V , f=1MHz - 2050 - pF
Output Capacitance Coss - 158 - pF
Reverse Transfer Capacitance Crss - 120 - pF
Total Gate Charge Qg VDS=30V , VGS=10V , ID=20A - 19 - nC
Gate-Source Charge Qgs - 7.1 - nC
Gate-Drain Charge Qg d - 7.6 - nC
Switching Characteristics
Turn-On Delay Time Td(on) VDD=30V VGS=10V , RG=3, ID=30A - 7.4 - nS
Rise Time Tr - 5.1 - nS
Turn-Off Delay Time Td(off) - 28.2 - nS
Fall Time Tf - 5.5 - nS
Diode Characteristics
Diode Forward Voltage VSD VGS=0V , IS=1A , TJ=25 - - 1.2 V
Diode Continuous Current IS - - 45 A
Reverse Recovery Time Trr IS=20A, di/dt=100A/us, Tj=25 - 22 - nS
Reverse Recovery Charge Qrr - 11 - nC
Package Information (PDFN5X6-8L)
Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max.
A 0.900 1.000 0.035 0.039
A3 0.254REF. 0.010REF.
D 4.944 5.096 0.195 0.201
E 5.974 6.126 0.235 0.241
D1 3.910 4.110 0.154 0.162
E1 3.375 3.575 0.133 0.141
D2 4.824 4.976 0.190 0.196
E2 5.674 5.826 0.223 0.229
k 1.190 1.390 0.047 0.055
b 0.350 0.450 0.014 0.018
e 1.270TYP. 0.050TYP.
L 0.559 0.711 0.022 0.028
L1 0.424 0.576 0.017 0.023
H 0.574 0.726 0.023 0.029
10 12 10 12

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