Surface Mount 16V P Channel MOSFET Siliup SP2333BT1 with Low On Resistance and 4A Continuous Current
Key Attributes
Model Number:
SP2333BT1
Product Custom Attributes
Drain To Source Voltage:
16V
Current - Continuous Drain(Id):
4A
RDS(on):
23mΩ@4.5V;31mΩ@2.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
650mV
Reverse Transfer Capacitance (Crss@Vds):
190pF
Number:
1 P-Channel
Pd - Power Dissipation:
1.2W
Output Capacitance(Coss):
290pF
Input Capacitance(Ciss):
740pF
Gate Charge(Qg):
4.5nC@2.5V
Mfr. Part #:
SP2333BT1
Package:
SOT-23-3L
Product Description
Product Overview
The SP2333BT1 is a 16V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. This surface-mount device offers high power and current handling capabilities, making it suitable for applications such as battery switches and DC/DC converters. It features a low RDS(on) of 23m at -4.5V and 31m at -2.5V, with a continuous drain current rating of -4A.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Package: SOT-23-3L
- Device Code: SP2333BT1
- Marking: S33
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | -16 | V | |||
| Static Drain-Source On-Resistance | RDS(on) | -4.5V | 23 | m | ||
| Static Drain-Source On-Resistance | RDS(on) | -2.5V | 31 | m | ||
| Continuous Drain Current | ID | -4 | A | |||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDSS | -16 | V | |||
| Gate-Source Voltage | VGSS | 10 | V | |||
| Continuous Drain Current | ID | -4 | A | |||
| Pulse Drain Current | IDM | -16 | A | |||
| Power Dissipation | PD | 1.2 | W | |||
| Thermal Resistance Junction-to-Ambient | RJA | 104 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250A | -16 | V | ||
| Drain-Source Leakage Current | IDSS | VDS=-13V , VGS=0V | -1 | uA | ||
| Gate-Source Leakage Current | IGSS | VGS=10V , VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS , ID=-250A | -0.4 | -0.65 | -1.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-4.5V , ID=-5A | 23 | 29 | m | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-2.5V , ID=-4.3A | 31 | 42 | m | |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=-4V , VGS=0V , f=1MHz | 740 | pF | ||
| Output Capacitance | Coss | 290 | ||||
| Reverse Transfer Capacitance | Crss | 190 | ||||
| Total Gate Charge | Qg | VDS=-4V , VGS=-2.5V , ID=-4.1A | 4.5 | nC | ||
| Gate-Source Charge | Qgs | 1.2 | ||||
| Gate-Drain Charge | Qgd | 1.6 | ||||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=-4V VGS=-4.5V , RG=1 , ID=-3.3A | 13 | nS | ||
| Turn-On Rise Time | tr | 35 | ||||
| Turn-Off Delay Time | td(off) | 32 | ||||
| Turn-Off Fall Time | tf | 10 | ||||
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A , TJ=25 | -1.2 | V | ||
| SOT-23-3L Package Information | |||
|---|---|---|---|
| Symbol | Dimensions in millimeters | Min. | Max. |
| A | 1.050 | 1.250 | |
| A1 | 0.000 | 0.100 | |
| A2 | 1.050 | 1.150 | |
| b | 0.300 | 0.500 | |
| c | 0.100 | 0.200 | |
| D | 2.820 | 3.020 | |
| E | 1.500 | 1.700 | |
| E1 | 2.650 | 2.950 | |
| e | 0.950 (Typ.) | ||
| e1 | 1.800 | 2.000 | |
| L | 0.300 | 0.600 | |
| 0 | 8 | ||
2506271732_Siliup-SP2333BT1_C49257225.pdf
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