Siliup Semiconductor SP3011ACNJ 30V MOSFET with ROHS Compliance and PDFN3X3 8L Surface Mount Package
Key Attributes
Model Number:
SP3011ACNJ
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
22A;18A
Operating Temperature -:
-55℃~+150℃
RDS(on):
9mΩ@10V;10mΩ@4.5V;20mΩ@10V;28mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
131pF;297pF
Number:
1 N-Channel + 1 P-Channel
Input Capacitance(Ciss):
1.17nF;1.65nF
Output Capacitance(Coss):
163pF;367pF
Pd - Power Dissipation:
23W
Gate Charge(Qg):
23.8nC@4.5V;32nC@4.5V
Mfr. Part #:
SP3011ACNJ
Package:
PDFNWB-8L(3.3x3.3)
Product Description
Product Overview
The SP3011ACNJ is a 30V complementary MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching speeds, a surface mount package, and is ROHS Compliant & Halogen-Free. The device is 100% Single Pulse avalanche energy tested and is suitable for applications such as DC-DC converters and motor control.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Line: SP3011ACNJ
- Certifications: ROHS Compliant & Halogen-Free
- Package Type: PDFN3X3-8L
- Device Code: SP3011ACNJ
Technical Specifications
| Parameter | Symbol | Conditions | N-Channel Min. | N-Channel Typ. | N-Channel Max. | N-Channel Unit | P-Channel Min. | P-Channel Typ. | P-Channel Max. | P-Channel Unit |
|---|---|---|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | V(BR)DSS | 30 | V | -30 | V | |||||
| Static Drain-Source On-Resistance | RDS(on) | VGS = 10V, ID = 8A | 9 | 11 | m | 20 | 24 | m | ||
| Static Drain-Source On-Resistance | RDS(on) | VGS = 4.5V, ID = 6A | 10 | 15 | m | 28 | 38 | m | ||
| Continuous Drain Current | ID | (Tc=25C) | 22 | A | -18 | A | ||||
| Pulse Drain Current | IDM | Tested | 88 | A | -72 | A | ||||
| Single pulsed avalanche energy | EAS | 22 | mJ | 35 | mJ | |||||
| Power Dissipation | PD | (Tc=25C) | 23 | WW | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 30 | - | - | V-30 | - | - | V||
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 1.0 | 1.5 | 2.5 | V-1.0 | -1.5 | -2.5 | V||
| Input Capacitance | Ciss | VDS=15V , VGS=0V , f=1MHz | 1170 | - | pF1650 | - | pF||||
| Output Capacitance | Coss | 163 | - | pF367 | - | pF|||||
| Reverse Transfer Capacitance | Crss | 131 | - | pF297 | - | pF|||||
| Total Gate Charge | Qg | VDS=15V , VGS=4.5V , ID=8A | 23.8 | - | nC32 | - | nC||||
| Turn-On Delay Time | Td(on) | VDD=15V VGS=10V , RG=1.5, ID=8A | 7 | - | nS9 | - | nS||||
| Rise Time | Tr | 15.2 | - | nS12 | - | nS|||||
| Turn-Off Delay Time | Td(off) | 25 | - | nS102 | - | nS|||||
| Fall Time | Tf | 6 | - | nS71 | - | nS|||||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | 1.2 | V- | -1.2 | V||||
| Diode Continuous Current | IS | - | 22 | A- | -18 | A|||||
| Reverse recover time | Trr | IS=13A, di/dt=100A/us, Tj=25 | - | 9 | nS- | 15 | nS||||
| Reverse recovery charge | Qrr | - | 3 | nC- | 10 | nC
| Package | Symbol | Dimensions In Millimeters (Min. - Max.) | Dimensions In Inches (Min. - Max.) |
|---|---|---|---|
| PDFN3X3-8L | A | 0.650 - 0.850 | 0.026 - 0.033 |
| A1 | 0.152 (REF.) | 0.006 (REF.) | |
| A2 | 0 - 0.05 | 0 - 0.002 | |
| D | 2.900 - 3.100 | 0.114 - 0.122 | |
| D1 | 0.935 - 1.135 | 0.037 - 0.045 | |
| D2 | 0.280 - 0.480 | 0.011 - 0.019 | |
| E | 2.900 - 3.100 | 0.114 - 0.122 | |
| E1 | 3.150 - 3.450 | 0.124 - 0.136 | |
| E2 | 1.535 - 1.935 | 0.060 - 0.076 | |
| b | 0.200 - 0.400 | 0.008 - 0.016 | |
| e | 0.550 - 0.750 | 0.022 - 0.030 | |
| L | 0.300 - 0.500 | 0.012 - 0.020 | |
| L1 | 0.180 - 0.480 | 0.007 - 0.019 | |
| L2 | 0 - 0.100 | 0 - 0.004 | |
| L3 | 0 - 0.100 | 0 - 0.004 | |
| H | 0.315 - 0.515 | 0.012 - 0.020 | |
| 9 - 13 | 9 - 13 |
2504101957_Siliup-SP3011ACNJ_C22385436.pdf
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