86--136 6733 2386
quality Electronic Component Slkor S8550T PNP Transistor Featuring 05A Collector Current and Compact SOT523 factory
quality Electronic Component Slkor S8550T PNP Transistor Featuring 05A Collector Current and Compact SOT523 factory

Electronic Component Slkor S8550T PNP Transistor Featuring 05A Collector Current and Compact SOT523

Key Attributes
Model Number: S8550T
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
DC Current Gain:
350@50mA,1V
Transition Frequency(fT):
150MHz
Vce Saturation(VCE(sat)):
600mV@500mA,50mA
Type:
PNP
Pd - Power Dissipation:
300mW
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
25V
Operating Temperature:
-
Mfr. Part #:
S8550T
Package:
SOT-523
Product Description

Product Overview

The S8550T is a PNP bipolar junction transistor designed as a complementary component to the S8050T. It features a maximum collector current of 0.5A and is suitable for various electronic applications requiring a versatile transistor with specific electrical characteristics. Its SOT-523 plastic surface-mounted package makes it ideal for compact designs.

Product Attributes

  • Marking: 2TY
  • Package Type: SOT-523
  • Package Outline: Plastic surface mounted package; 3 leads
  • Complimentary To: S8050T

Technical Specifications

Symbol Parameter Conditions Min Max Units
MAXIMUM RATINGS (TA=25 unless otherwise noted)
VCBO Collector-Base Voltage -40 V
VCEO Collector-Emitter Voltage -25 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current - Continuous -0.5 A
PC Collector Power Dissipation 0.3 W
Tj Junction Temperature 150
Tstg Storage Temperature -55 150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
V(BR)CBO Collector-base breakdown voltage IC = -100A, IE=0 -40 V
V(BR)CEO Collector-emitter breakdown voltage IC =-1mA, IB=0 -25 V
V(BR)EBO Emitter-base breakdown voltage IE= -100A, IC=0 -5 V
ICBO Collector cut-off current VCB= -40V, IE=0 -0.1 A
ICEO Collector cut-off current VCE= -20V, IB=0 -0.1 A
IEBO Emitter cut-off current VEB= -3V, IC=0 -0.1 A
hFE(1) DC current gain VCE= -1V, IC= -50mA 200 350
hFE(2) DC current gain VCE= -1V, IC= -500mA 50
VCE(sat) Collector-emitter saturation voltage IC=-500mA, IB= -50mA -0.6 V
VBE(sat) Base-emitter saturation voltage IC=-500mA, IB= -50mA -1.2 V
fT Transition frequency VCE= -6V, IC= -20mA, f=30MHz 150 MHz
PACKAGE OUTLINE DIMENSIONS (in Millimeters)
Symbol Dimension Min Max
A 0.60 0.80
A1 0.010 0.100
B 0.95 1.05
bp 0.26 0.40
bq 0.16 0.30
C 0.09 0.15
D 1.50 1.70
E 0.70 0.85
HE 1.45 1.75
Lp 0.16 0.36
0 5

2308251150_Slkor-S8550T_C7543332.pdf

Related Products
quality N Channel Enhancement Mode MOSFET YANGJIE YJG130G04CQ Ideal for Power Switching and DC DC Conversion factory
N Channel Enhancement Mode MOSFET YANGJIE YJG130G04CQ Ideal for Power Switching and DC DC Conversion
Product OverviewThe YJG130G04CQ is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. It features split gate trench MOSFET technology, a high-density cell design for low RDS(ON), and an excellent package for heat dissipation. This transistor ...
quality Planar die Zener diode XZT BZT52C7V5 designed for medium current applications and automated assembly factory
Planar die Zener diode XZT BZT52C7V5 designed for medium current applications and automated assembly
Product OverviewThe BZT52C2V4 thru BZT52C43 series is a range of Zener diodes featuring planar die construction. These diodes are designed for general purpose, medium current applications and are ideally suited for automated assembly processes. They are available in a lead-free version.Product ...
quality 400 watt LDMOS FET power amplifier Wolfspeed PXAE213708NB-V1-R2 for 2110 to 2180 MHz cellular applications factory
400 watt LDMOS FET power amplifier Wolfspeed PXAE213708NB-V1-R2 for 2110 to 2180 MHz cellular applications
Product Overview The Wolfspeed PXAE213708NB is a 400-watt LDMOS FET designed for multi-standard cellular power amplifier applications within the 2110 to 2180 MHz frequency band. This device features broadband internal input and output matching, an asymmetrical Doherty design with distinct main and ...
quality Zener diode YANGJIE BZX584B15VQ with 15 volt Zener voltage and 2 percent tolerance in compact SOD523 package factory
Zener diode YANGJIE BZX584B15VQ with 15 volt Zener voltage and 2 percent tolerance in compact SOD523 package
Product OverviewThe BZX584B3V6Q thru BZX584B36VQ series are small signal Zener diodes designed for general regulation functions. They feature an epoxy case that meets UL-94 V-0 flammability rating and is halogen-free, with Moisture Sensitivity Level 1. These diodes offer Zener voltages ranging from ...
Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.