60V N Channel Power MOSFET Siliup SP60N02BGTD featuring fast switching and low gate charge for power switching circuits
Key Attributes
Model Number:
SP60N02BGTD
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
180A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.7V@250uA
Reverse Transfer Capacitance (Crss@Vds):
11pF
Number:
1 N-channel
Output Capacitance(Coss):
1.3nF
Input Capacitance(Ciss):
3.91nF
Pd - Power Dissipation:
170W
Gate Charge(Qg):
101nC@10V
Mfr. Part #:
SP60N02BGTD
Package:
TO-263
Product Description
Product Overview
The SP60N02BGTD is a 60V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), leveraging advanced split gate trench technology. This MOSFET is designed for power switching applications, including hard switched and high-frequency circuits, and uninterruptible power supplies. It has undergone 100% single pulse avalanche energy testing.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Line: SP60N02BGTD
- Technology: Advanced Split Gate Trench Technology
- Channel Type: N-Channel
- Package Type: TO-263
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 60 | V | |||
| Gate-Source Voltage | VGSS | 20 | V | |||
| Continuous Drain Current (Tc=25C) | ID | (Tc=25C) | 180 | A | ||
| Continuous Drain Current (Tc=100C) | ID | (Tc=100C) | 120 | A | ||
| Pulse Drain Current Tested | IDM | 720 | A | |||
| Single Pulse Avalanche Energy1 | EAS | 675 | mJ | |||
| Power Dissipation (Tc=25C) | PD | (Tc=25C) | 170 | W | ||
| Thermal Resistance Junction-to-Case | RJC | 0.74 | C/W | |||
| Maximum Junction Temperature | TJ | -55 | 150 | C | ||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250mA | 60 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=48V, VGS=0V | - | - | 1 | uA |
| Gate Leakage Current | IGSS | VGS=20V, VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250uA | 1.2 | 1.7 | 2.2 | V |
| Drain-Source On-state Resistance | RDS(ON) | VGS=10V, ID=40A | - | 2.5 | 3.2 | m |
| Drain-Source On-state Resistance | RDS(ON) | VGS=4.5V, ID=40A | - | 2.9 | 5.2 | m |
| Input Capacitance | Ciss | VGS=0V, VDS=30V, F=1MHz | - | 5441 | - | pF |
| Output Capacitance | Coss | - | 2201 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 136 | - | pF | |
| Total Gate Charge | Qg | VDS=30V, VGS=10V, ID=30A | - | 101 | - | nC |
| Gate-Source Charge | Qgs | - | 17 | - | nC | |
| Gate-Drain Charge | Qgd | - | 21 | - | nC | |
| Turn-On Delay Time | td(on) | VDD=30V, ID=30A, VGS=10V, RG=3 | - | 15 | - | nS |
| Rise Time | tr | - | 34 | - | nS | |
| Turn-Off Delay Time | td(off) | - | 76 | - | nS | |
| Fall Time | tf | - | 95 | - | nS | |
| Source-Drain Diode Forward Voltage | VSD | IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 180 | A | |
| Reverse Recovery Time | trr | IS=20 A,di/dt=100 A/sTJ=25 | - | 45 | - | nS |
| Reverse Recovery Charge | Qrr | - | 41 | - | nC |
Note: The test condition for switching characteristics is VDD=30V, VGS=10V, L=0.3mH, RG=25.
TO-263 Package Information (Dimensions in Millimeters)
| Symbol | Min | Max | Symbol | Min | Max |
|---|---|---|---|---|---|
| A | 4.470 | 4.670 | A1 | 0.000 | 0.150 |
| B | 1.120 | 1.420 | b | 0.710 | 0.910 |
| b1 | 1.170 | 1.370 | c | 0.310 | 0.530 |
| c1 | 1.170 | 1.370 | D | 10.010 | 10.310 |
| E | 8.500 | 8.900 | e | 2.540 TYP. | |
| e1 | 4.980 | 5.180 | L | 14.940 | 15.500 |
| L1 | 4.950 | 5.450 | L2 | 2.340 | 2.740 |
| L3 | 1.300 | 1.700 | 0 | 8 | |
| V | 5.600 REF. |
2504101957_Siliup-SP60N02BGTD_C22385360.pdf
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