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quality 60V N Channel Power MOSFET Siliup SP60N01BGHTD with Low Gate Charge and Fast Switching TO263 Package factory
quality 60V N Channel Power MOSFET Siliup SP60N01BGHTD with Low Gate Charge and Fast Switching TO263 Package factory

60V N Channel Power MOSFET Siliup SP60N01BGHTD with Low Gate Charge and Fast Switching TO263 Package

Key Attributes
Model Number: SP60N01BGHTD
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
330A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.1mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
32pF
Number:
1 N-channel
Output Capacitance(Coss):
3.885nF
Input Capacitance(Ciss):
7.397nF
Pd - Power Dissipation:
213W
Gate Charge(Qg):
105nC@0V
Mfr. Part #:
SP60N01BGHTD
Package:
TO-263
Product Description

Product Overview

The SP60N01BGHTD is a 60V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), enabled by advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for applications such as chargers, battery management, and power switching. The device is available in a TO-263 package.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Product Code: SP60N01BGHTD
  • Technology: Advanced Split Gate Trench Technology
  • Package: TO-263

Technical Specifications

Parameter Symbol Test Condition Rating Unit
Product Summary
V(BR)DSS 60 V
RDS(on)TYP @10V 1.7 m
ID 200 A
Absolute Maximum Ratings (Ta=25 unless otherwise noted)
Drain-Source Voltage VDS 60 V
Gate-Source Voltage VGS 20 V
Continuous Drain Current (Tc=25) - Silicon limit ID 330 A
Continuous Drain Current (Tc=25) - Package limit ID 200 A
Pulsed Drain Current IDM 800 A
Single Pulse Avalanche Energy1 EAS 1332 mJ
Power Dissipation (Tc=25) PD 213 W
Thermal Resistance Junction-to-Case RJC 0.58 /W
Storage Temperature Range TSTG -55 to 150
Operating Junction Temperature Range TJ -55 to 150
Electrical Characteristics (Ta=25, unless otherwise noted)
Static Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V , ID=250uA 60 V
Drain Cut-Off Current IDSS VDS=48V , VGS=0V - 1 A
Gate Leakage Current IGSS VGS=20V , VDS=0V - 100 nA
Gate Threshold Voltage VGS(th) VGS=VDS , ID =250uA 2.0 3.0 4.0 V
Drain-Source ON Resistance RDS(ON) VGS=10V , ID=30A - 1.7 2.1 m
Dynamic Characteristics
Input Capacitance Ciss VDS=25V , VGS=0V , f=1MHz - 7397 - pF
Output Capacitance Coss - 3885 - pF
Reverse Transfer Capacitance Crss - 32 - pF
Total Gate Charge Qg VDS=48V , VGS=10V , ID=30A - 105 - nC
Gate-Source Charge Qgs - 20 - nC
Gate-Drain Charge Qgd - 18 - nC
Switching Characteristics
Turn-On Delay Time td(on) VDD=48V,VGS=10V,RG=2, ID=30A - 32.3 - nS
Rise Time tr - 52.1 - nS
Turn-Off Delay Time td(off) - 91 - nS
Fall Time tf - 27.8 - nS
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage VSD IS = 1A, VGS = 0V - - 1.2 V
Maximum Body-Diode Continuous Current IS - - 200 A
Reverse Recovery Time trr IS=20A, di/dt=100A/us, TJ=25 - 76 - nS
Reverse Recovery Charge Qrr - 106 - nC
Note: 1. The EAS test condition is VDD=30V,VGS=10V,L=0.5mH,RG=25
Package Information: TO-263
Marking: 60N01BGH (Product code) : Week code
Order Information: Device: SP60N01BGHTD, Package: TO-263, Unit/Tape: 800

2410311049_Siliup-SP60N01BGHTD_C42372364.pdf
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