Low RDSon and Fast Switching 200V P Channel Planar MOSFET Siliup SP50P20TF for Power Supply Applications
Key Attributes
Model Number:
SP50P20TF
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
200V
Current - Continuous Drain(Id):
27A
Operating Temperature -:
-55℃~+150℃
RDS(on):
70mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Reverse Transfer Capacitance (Crss@Vds):
163pF
Number:
1 P-Channel
Output Capacitance(Coss):
1.021nF
Input Capacitance(Ciss):
5.421nF
Pd - Power Dissipation:
453W
Gate Charge(Qg):
104nC@10V
Mfr. Part #:
SP50P20TF
Package:
TO-247
Product Description
Product Overview
The SP50P20TF is a 200V P-Channel Planar MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), making it ideal for high-frequency switching and synchronous rectification applications, particularly in DC-DC converters. The device is 100% tested for single pulse avalanche energy.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP50P20TF
- Technology: P-Channel Planar MOSFET
- Package Type: TO-247
- Circuit Diagram: TO-247(G:1 D:2 S:3)
- Marking: 50P20 :Device Code, *:Week Code
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | -200 | V | |||
| RDS(on) | RDS(on) | @10V | 70 | m | ||
| Continuous Drain Current | ID | -27 | A | |||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | -200 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current (Tc=25) | ID | -27 | A | |||
| Continuous Drain Current (Tc=100) | ID | -18 | A | |||
| Pulsed Drain Current | IDM | -108 | A | |||
| Single Pulse Avalanche Energy | EAS | 2494 | mJ | |||
| Power Dissipation (Tc=25) | PD | 453 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 0.27 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250uA | -200 | V | ||
| Drain-Source Leakage Current | IDSS | VDS=-160V , VGS=0V , TJ=25 | -100 | uA | ||
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =-250uA | -2 | -3 | -4 | V |
| Drain-Source ON Resistance | RDS(ON) | VGS=-10V , ID=-10A | 70 | 88 | m | |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=-25V , VGS=0V , f=1MHz | 5421 | pF | ||
| Output Capacitance | Coss | 1021 | pF | |||
| Reverse Transfer Capacitance | Crss | 163 | pF | |||
| Total Gate Charge | Qg | VDS=-160V , VGS=-10V , ID=-10A | 104 | nC | ||
| Gate-Source Charge | Qgs | 24 | ||||
| Gate-Drain Charge | Qg | 43 | ||||
| Switching Characteristics | ||||||
| Turn-On Delay Time | Td(on) | VDD=-100V , VGS=-10V , RG=9.1, ID=-10A | 31 | nS | ||
| Rise Time | Tr | 46 | ||||
| Turn-Off Delay Time | Td(off) | 57 | ||||
| Fall Time | Tf | 27 | ||||
| Drain-Source Body Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | IS=-1A,VGS=0V | -1.2 | V | ||
| Package Information (TO-247) | ||||||
| Symbol | Dimensions In Millimeters | Dimensions In Inches | Min. | Max. | Min. | Max. |
| A | 4.850 - 5.150 | 0.191 - 0.200 | ||||
| A1 | 2.200 - 2.600 | 0.087 - 0.102 | ||||
| b | 1.000 - 1.400 | 0.039 - 0.055 | ||||
| b1 | 2.800 - 3.200 | 0.110 - 0.126 | ||||
| b2 | 1.800 - 2.200 | 0.071 - 0.087 | ||||
| c | 0.500 - 0.700 | 0.020 - 0.028 | ||||
| c1 | 1.900 - 2.100 | 0.075 - 0.083 | ||||
| D | 15.450 - 15.750 | 0.608 - 0.620 | ||||
| E1 | 3.500 REF. | 0.138 REF. | ||||
| E2 | 3.600 REF. | 0.142 REF. | ||||
| L | 40.900 - 41.300 | 1.610 - 1.626 | ||||
| L1 | 24.800 - 25.100 | 0.976 - 0.988 | ||||
| L2 | 20.300 - 20.600 | 0.799 - 0.811 | ||||
| 7.100 - 7.300 | 0.280 - 0.287 | |||||
| e | 5.450 TYP. | 0.215 TYP. | ||||
| H | 5.980 REF. | 0.235 REF. | ||||
| h | 0.000 - 0.300 | 0.000 - 0.012 | ||||
Note: 1. The test condition is VDD=-50V, VGS=-10V, L=10mH, RG=25
2504101957_Siliup-SP50P20TF_C42372399.pdf
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